• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.274-277
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• 2006

Nanostructured carbon (nm-C), including carbon nanotubes and nanofibers (CNTs/CNFs) is promising for low-cost field emission display (FED) application. By modification of CNTs/CNFs, uniform CNTs/CNFs can be obtained and used for field emission cathode (FEC) on glass substrate. By screen-printing (SP) and electrophoretic deposition (EPD) process, large area FEC can be obtained. The FED properties are studied and compared. Both SP and EPD FEC show excellent field emission properties, such as low emission field and uniform emission, after optimization the fabrication process. While EPD FEC exhibits better luminescence image. By vacuum sealing, the low cost nm-C-FED prototypes based on EPD cathode have been demonstrated.

• KSBB Journal
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• v.13 no.1
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• pp.52-57
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• 1998

The present work proposes a simple electrochemical method applicable to any immobilization processes of oxidase using a Clark type oxygen electrode as a base transducer. The present work suggests an optimal immobilization technique among three different methods of glucose oxidase(GOD) onto one side of $37[\mu}$mthick blend membranes, composed o 80% of cellulose triacetate and 20% of polycaprolactone, on the basis of the maximum Michaelis-Menten parameter(Vm) determined by either steady state or transient analyses. The electrode system was made of disk type gold cathode(4mm diameter) and Ag/AgCl anode. One side of the blend membrane was in contact with the cathode surface while the other side was immobilized with GOD either in covalent-bond or cross-linked forms, the latter being covered by $25{\mu}$m thick dialysis membrane of cellulose acetate. The resultant current density was on-line monitored by a potentiostat while glucose level was varied from 1 to 20 mM. The present study shows that direct cross-linking of GOD with glutaraldehyde was mostly preferred for fabrication of glucose sensor, on the basis of resultant kinetic parameters from either steady state or transient analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.432-432
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• 2010

Organic light emitting diodes (OLED) thin films were fabricated by Electrostatic spray deposition (ESD). In this study, we reported the thickness, morphology, current efficiency, luminescence of OLED fabricated by ESD. These results were compared with the spin coating method, and showed that also ESD is a good fabrication method for OLED because of its characteristics similar with the results using spin coating. The active layer consists of organic blends with Poly(N-vinylcarbazole) (PVK), 2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N'-Bis(3-methylphenyl) -N,N'-bis(phenyl)-benzidine (TPD), Tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), and the structure of OLED consists of aluminum (Al), lithium fluoride (LiF), organic blends, PEDOT:PSS and Indium-tin-oxide (ITO), which was used as the top cathode, cathode interfacial layer, emitting layer and bottom anode, respectively. The results suggest that Electrostatic spray deposition is a promising method for the next generation of OLED fabrication since it has a probability fabricating large-area thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.139-144
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• 2006

A fabrication condition of the cathode electrode was optimized in a lithium secondary battery. The $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ powders were used as a cathode material. The $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$/Li cells were prepared with a certain formulation and their cycleability and rate-capability were evaluated. Optimum electrode composition simulated from the evaluated value was 86.3: 5.6: 8.1 in mass $\%$ of active material: binder: conducting material. Discharge capacity decreased markedly as the press ratio exceeded $30\%$ during preparation of the electrode. Discharge performance at a high current rate deteriorated abruptly as the electrode thickness was over $120{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.71-74
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• 2022

For the process simplification in the fabrication of organic light emitting diode(OLED), top emission OLED (TEOLED) was fabricated without lithium fluoride(LiF) used as an electron injection layer (EIL). After co-deposition of Mg and Ag with a different process conditions, a cathode material adjacent to EIL was optimized when Mg and Ag have a ratio of 1:9 considering sheet resistance and transmittance. From the energy band diagram of TEOLED, band gap difference between Trisaluminium (Alq3) and Mg:Ag cathode show the difference of 0.4 eV according to the usage of LiF The fabricated TEOLED without LiF showed the improvement of 5.2 % and 2.7 % in the luminance and the current density comparing that with LiF. The results show there is no significant difference in OLED characteristics regardless of LIF layer in the TEOLED structures.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.787-790
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• 2004

The large size and high brightness backlight system for LCD panel inspection equipment was designed, fabricated, and evaluated. The cold cathode fluorescent lamp (CCFL) instead of the hot cathode fluorescent lamp (HCFL) were used as the light source. The inverters for driving multi-lamp CCFL backlight systems were also designed and fabricated. The measured luminance of the fabricated CCFL backlight system was 20,000 cd/$m^2$ and the uniformity of the backlight was 85%. The fabricated backlight system was successfully applied to the LCD panel inspection equipment.

• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.683-686
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• 2001

Electrochemically active lithium nickel cobalt oxide thin-film was not fabricated until now. The thin-film was deposited by RF magnetron sputtering at room temperature, and its initial phase was amorphous. By varying deposition condition, the different characteristics of thin-film were achieved. Using electrochemical analyses, the relationship between physical and electrochemical characteristics was identified. Crystallized thin-film by RTA (Rapid Thermal Annealing) was shown a good capacity and cycle property.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.61-64
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• 2007

Ni/YSZ ($Y_{2}O_{3}-stabilized$ $ZrO_{2}$), Cu/YSZ and CuO/YSZ composite powder for a cathode material in high temperature electrolysis (HTE) was synthesized by a mechanical alloying method with Ni (or Cu, CuO, Co) and YSZ powder. Microstructure of the composite for HTE reaction has been analyzed with various techniques of XRD, SEM to investigate effects of fabrication conditions. And conductivity of electrode was measured, Cu/YSZ cermet showed the higher electrical conductivity value than Ni/YSZ.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.243-246
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• 2001

Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.