• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.11
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• pp.1044-1050
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• 2013

This paper analyzes what is mitigated as spoofing attack using the U-Blox Receiver and GPS RF signal generator developed at ETRI. Generally the spoofing attack made the target receiver to be wrong navigation solution by providing false measurement of code and carrier. So we analyzed the impact of spoofing attack through the signal strength and navigation solution. In oder to test of effect of anti-spoofing signal, we consider the signal with antiphase code to spoofing signal and generated GPS normal signal and spoofing signal and anti-spoofing signal using GPS RF signal generator. This paper analyzed that the GPS receiver was responded to the spoofing attack according to code phase difference between spoofing and anti-spoofing signal. We confirmed that the spoofing signal was disappeared by anti-spoofing signal if code phase is an exact match.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• Journal of Astronomy and Space Sciences
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• v.26 no.2
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• pp.229-236
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• 2009

KOorea Multi-purpose SATellite(KOMPSAT)-5 will be launched at 550km altitude in 2010. Accurate satellite position(20 cm) and velocity(0.03 cm/s) are required to treat highly precise Synthetic Aperture Radar(SAR) image processing. Ionosphere delay was eliminated using dual frequency GPS data and double differenced GPS measurement removed common clock errors of both GPS satellites and receiver. SAC-C carrier phase data with 0.1 Hz sampling rate was used to achieve precise orbit determination(POD) with ETRI GNSS Precise Orbit Determination(EGPOD) software, which was developed by ETRI. Dynamic model approach was used and satellite's position, velocity, and the coefficients of solar radiation pressure and drag were adjusted once per arc using Batch Least Square Estimator(BLSE) filter. Empirical accelerations for sinusoidal radial, along-track, and cross track terms were also estimated once per revolution for unmodeled dynamics. Additionally piece-wise constant acceleration for cross-track direction was estimated once per arc. The performance of POD was validated by comparing with JPL's Precise Orbit Ephemeris(POE).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.19 no.3
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• pp.263-272
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• 2001

For a high resolution real-time kinematic GPS surveying using carrier phase, positioning accuracy according to the OTF initialization was better than 1 cm with more than 5-minute initialization within 20 km baseline. Also, it is recommended that measurements be carried out when PDOP and RDOP can be kept less than 4.0 since the geometrical layout of satellites has a great influence on the positioning accuracy. After considering the initial conditions and measuring time zone for real-time kinematic GPS. post-processed continuous kinematic GPS and real-time kinematic GPS measurements have been carried out. A new system has been proposed to store measured data by using a program developed to store GPS data in real time and to monitor the satellite condition through controller at the time of measurement. As a result, it has been revealed that possible noise in surveying could be corrected and the accuracy could be improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.184-188
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• 1999

PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with the substrate temperature up to $300^{\circ}C$. PbTe films could not form at substrate temperature above $400^{\circ}C$ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by $T_{sub}=300^{\circ}C$ were $3.68{\times}10^{18}cm^{-3}$ and $148\;cm^2/Vs$, respectively.

• International Journal of Control, Automation, and Systems
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• v.6 no.4
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• pp.534-543
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• 2008

To use the Global Positioning System (GPS) carrier phase measurement for precise positioning, the integer ambiguities at the early stage of most algorithms must be determined. Furthermore, if a precise positioning is to be applied to real time navigation, fast determination and validation methods for integer ambiguity are essential. In this paper, the Wald test that simultaneously determines and validates integer ambiguities is used with assistance of the Inertial Navigation System (INS) to improve its performance. As the Wald test proceeds, it assigns a higher probability to the candidate that is considered to be true at each time step. The INS information is added during the Wald test process. Large performance improvements were achieved in convergence time as well as in requiring fewer observable GPS satellites. To test the performance improvement of the Wald test with the INS information, experimental tests were conducted using a ground vehicle. The vehicle moved in a prescribed trajectory and observed seven GPS satellites. To verify the effect of the INS information on the Wald test, the convergence times were compared with cases that considered the INS information and cases that did not consider the INS information. The results show that the benefits of using the INS were emphasized as fewer GPS satellites were observable. The performance improvement obtained by the proposed algorithm was shown through the fast convergence to the true hypothesis when using the INS measurements.