• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.117-123
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• 1998

We investigated the effect of mechanical backside damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photo-acoustic displacement values increased proportionally, and it was at Grade 1: Grade 2:Grade 3 = 1:19.6:41 that the normalized relative quantization ratio of excess photo-acoustic displacement in damaged wafer was calculated, which are normalized to the excess PAD from sample Grade 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.581-586
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• 1998

We investigated the effect of mechanical back side damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, degree of X-ray diffuse scattering, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the magnitude of diffuse scattering and X-ray excess intensity increased proportionally, and it was at Grade 1:Grade 2:Grade 3=1:7:18.4 that the normalized relative quantization ratio of excess intensity in damaged wafer was calculated, which are normalized to the excess intensity from sample Grade 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Journal of Preventive Medicine and Public Health
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• v.10 no.1
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• pp.52-58
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• 1977

By evaluating the health status by Cornell Medical Index in conjunction with their academic grade, we attempted to find out whether any health condition may affect on their academic carrier. CMI health questionnaire was filled out by student and matched with one's own academic score if the previous year. Academic score was classified into 5 grades: excellent, very good, good, fair and poor. Difference in number of questions between sections was corrected by standard score method with means of 50 and standard deviation of 10. Differences in number of 'yes' answers between sections and between groups of students in each grade were statistically tested by two-way variance analysis method. On the other hand, influence of neuropsychiatric factors (section M-R) on the academic carrier was analyzed by $X^2-test$ with Fukamachi's classification. The following were the results obtained in this study: 1) Number of 'yes' answers in sections related to mood and feeling patterns (sections M-R) were appeared to be influential to academic carrier in male students, but not in female students. 2) Generally speaking, in groups of higher academic grade, number of 'yes' answers in each section was on an averege 50 or less, and in groups of lower academic grade, the number was 50 or more depending on sections. 3) Number of 'yes' answers between sections and between groups in each academic grade were significantly different both in male and female college students. 4) It was noteworthy that data obtained from CMI questionnaire might be variable subjectively by examinees with some factors at the time of administration.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.10
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• pp.1290-1300
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• 2016

Recently, various middle box services have been developed and applied to provide network functions to end nodes of the network. Especially, network virtualization is increasingly proceeding by applying the virtualization technologies of cloud computing field to network field, and network platforms for various flexible services are being developed to connect among the virtual network devices. Carrier-grade Network Address Translation (CGNAT) is also one of these flexible network services. This paper designs and implements the DPDK-based CGNAT framework that provides flexibility and maximizes address translation throughput. Our framework achieves 15.5 times higher throughput than the address translation service by Linux kernel.

• Journal of the Society of Naval Architects of Korea
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• v.34 no.4
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• pp.108-118
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• 1997

For the LNG carrier, the calculation of temperature distribution of cargo tank is necessary to select the steel grade and to estimate the boil-off rate(BOR). Since the previous studies with 2-D and 3-D method ignored the effect of several primary members, the effect was included by applying the better equations for the convection coefficient that is the most important item in this kind of study. After evaluating the program considering the primary members, the results are reflected to the design of the concerned LNG carrier.

• Journal of Broadcast Engineering
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• v.15 no.2
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• pp.182-191
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• 2010

In this paper, a simple Carrier Frequency Recovery(CFR) scheme is introduced. In relating the use of consumer-grade equipment and satellite transmission environments, carrier frequency recovery have to recovery a large initial Carrier Frequency Offset(CFO), which is 20% normalized CFO, for DVB-S2 receivers. For these reasons, conventional CFR schemes for DVB-S2 systems need significant hardware complexity. Introduced CFR scheme employs Fitz algorithm for coarse CFR and recovers a coarse CFO accurately, and a simple pilot block correlation algorithm is employed for fine CFR. Introduced scheme reduce the number of multiplication operations by 80% and does not need any additional memory without degrading the achievable performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.438-438
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• 2009

We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.

• Journal of Korea Society of Industrial Information Systems
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• v.8 no.1
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• pp.83-91
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• 2003

High-speed QPSK demodulator has been in important design objective of any wireless communication systems, especially those offering broadband multimedia service. This paper describes all-digital QPSK demodulator for high-speed wireless communications, and its hardware structures are discussed. All-digital QPSK demodulator is mainly composed of symbol time circuit and carrier recovery circuit to estimate timing and phase-offsets. There are various schemes. Among them, we use Gardner algorithm and Decision-Directed carrier recovery algorithm which is most efficient scheme to warrant the fast acquisition and tacking to fabricate FPGA chip. The testing results of the implemented onto CPLD-EPF10K100GC 503-4 chip show demodulation speed is reached up to 2.6[Mbps]. If it is implemented a CPLD chip with speed grade 1, the demodulation speed can be faster by about 5 times. Actually in case of designing by ASIC, its speed my be faster than CPLD by 5 times. Therefore, it is possible to fabricate the all-digital QPSK demodulator chipset with speed of 50[Mbps].

• Journal of the Korean Institute of Gas
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• v.19 no.6
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• pp.62-66
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• 2015

Considering for plants and structure under extreme conditions is required for the successful design, especially temperature and pressure. The ductile-brittle transition temperature (DBTT) for the materials under extreme condition needs to be considered. In this study, A-grade mild steel for the LNG carrier and offshore plant was examined by performing low-temperature Charpy V-notch (CVN) impact tests to investigate DBTT and the fracture toughness. The absorbed energy decreased gradually with the experimental temperature, which showed an upper-shelf energy region, lower shelf energy region, and transition temperature indicating DBTT. In addition, the fracture surface morphologies of the mild steels indicated ductile fractures at the upper-shelf energy level, with wide and large-sized dimples, whereas a brittle fracture surface, where was observed at the lower-shelf energy level, with both large and small cleavage facets. Based on the experimental results, ductile brittle transition temperature was estimated in about $-60^{\circ}C$.