• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.3
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• pp.60-65
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• 1984

In this paper, we have used symmetrical GaAs/(Ga, Al) As DH-LED as a model for the optimization of frequency response which is the most important design parameter of the optical communication-LED. And optimum design parameters have been chosen to improve performance factors of the DH-LED by computer simulation. This is for the purpose of systematic consideration of the interrelation of the physical parameters such as impurity concentration of the active layer, thickness of the active layer, minority carrier lifetime, space charge capacitance and injected current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.229.1-229.1
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• 2016

본 연구에서는 Hole Transporting Layer(HTL)와 Electron Transporting Layer(ETL)의 두께에 의한 특성을 비교해보기 위해서 각각 0, 10, 20 nm로 HTL, ETL 두께를 달리한 형광 OLED소자를 제작하였다. ETL의 두께가 얇아질수록 $V_{TH}$ 값은 2.5V에서 0.9 V로 낮게 나타났고 소자의 전체 두께와 on voltage는 비례한다는 특성을 발견할 수 있었다. HTL과 ETL이 두꺼울수록 각 layer에서 carrier들의 이동에 delay가 생기고 emission layer에서 표면까지 거리가 생기기 때문이다. ETL의 두께가 두꺼울수록 높은 luminance 값을 나타내는 차이를 보여주고 있다. Hole에 비해 이동도가 작은 electron은 emission layer까지 늦게 전달되어, EML내에서 비교적 cathode쪽에 가까운 곳에서 exciton이 형성되기 때문이다. CE에도 더 두꺼운 ETL을 가진 소자가 더 높은 CE값 가짐을 확인할 수 있다. 모든 소자가 $200mA/cm^2$에서 가장 높은 CE값을 나타낸 이유는 $200mA/cm^2$에서 electron-hole 결합이 만들어내는 exciton형성이 가장 많기 때문이다. PE, QE도 ETL 두께가 두꺼울수록 특성을 향상이다. 결론적으로 ETL의 두꺼울수록 current density값이 감소함을 보이고 있는 반면 turn on voltage, luminance, efficiency 증가함을 볼 수 있다.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.204-207
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• 1996

태양의 광에너지를 전기에너지로 변환하는 태양전지의 재료는 현재 무기반도체가 주를 이루고 있지만 최근 유기반도체가 재료자체 물성의 연구진전과 더불어 태양전지로서 개발가능성이 논하여 지고 있다. 한편 유기반도체의 장점은 1)박막으로 제작이 용이하고 2)대량생산에 의한 저가제조가 가능하며 3)경량화를 할 수 있고 4)그 기능의 다양성을 줄 수 있다는 것이다. 또한 단점은 캐리어 트랩 밀도가 커서 반송자(carrier)의 수명과 이동도가 작고 확산길이도 짧기 때문에 광수집 효율이 매우 낮아 광전변환효율이 낮다는 것이다. 또한 일반적으로 유기반도체는 저항율이 커서 오옴성 접촉이 어렵고 입사광 강도의 증대에 따라 변환효율이 감소하는것도 큰 문제로 되어있다. 따라서 본고에서는 지금까지 유기반도체를 사용한 태양전지의 원리 및 제조기술을 간단히 살펴보고 특성과 연구동향등을 분석하여 앞으로 유기반도체 태양전지의 나아가야할 방향을 찾아보고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.6-9
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• 2000

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.178-178
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• 2003

II-Ⅵ족 반도체 중에서 넓은 밴드갭을 가지는 ZnO에 Mn 이온을 doping할 경우 Tc가 상온보다 높을 것이라는 이론적 계산이 2000년 Science에 발표되었다. 이후 ZnO에 전이금속 이온을 doping하여 상온에서도 강자성을 나타내는 자성 반도체 (DMS)를 만들기 위한 연구가 활발히 진행되고 있다. Co-doped ZnO 박막은 PLD로 증착하였을 경우 Tc가 상온보다 높으나 재현성이 낮은 것으로 알려져 있었다. 그러나 최근 sol-gel 방법을 이용하여 Co-doped ZnO 박막을 제조하면 강자기 특성의 재현성을 높일 수 있다는 결과가 보고되었다. 이에 본 연구에서는 sol-gel 방법을 사용하여 여러 조성의 Co-doped ZnO 박막을 합성한 후 이들의 자성 특성을 검토하였다. 이러한 결과를 바탕으로 Co-doped ZnO 박막에서 강자성 발현의 근원을 규명하고자 (ⅰ) 조성에 따른 Co-doped ZnO의 Raman peak과 EXAFS peak의 변화를 측정하여 구조적 특성과 ZnO 내에서의 Co 이온의 상태를 분석하였으며, (ⅱ) Hall 효과 실험으로 carrier density를 측정함으로써 Fermi 준위에서의 파수 벡터의 크기를 산출하고자 하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.5
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• pp.1372-1383
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• 1998

In this paper, modeling for DC and AC characteristics analysis of DFB-LD was performed considering effects of .lambda./4-shifted gratingandspatial hole burning within a laser diode cavity. From the simulation for DC characteristics, Light-Current curve, optical power distribution and carrier density distribution within the cavity can be obtained. The simulation for AC characteristics porovides IM response and the amplitude and phase and the amplitude and phase response of FM with excellent accuracy.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.2
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• pp.101-107
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• 2009

This paper deal with development of on-line type voltage sag compensation system using supercapacitor EDLC to solve the voltage sag problems which are considered to be dominant disturbances affecting the power quality. With the wide use of semiconductor devices in electrical equipment, modem-type loads are becoming increasingly sensitive to the voltage sags and the disturbances prove to be costly to industries. Supercapacitor EDLC is employed to compensate dynamically for the voltage sag of system with sensitive loads. This capacitor has higher energy density than the electrolytic capacitor. Also, this capacitor has a lot of advantage such as no maintenance, longer life cycle and faster charge-discharge time than the battery system. Therefore, in this paper, the energy design scheme of supercapacitor and the configuration technique of on-line type voltage sag compensation systems are newly introduced. According to the results of experimental of prototype 5[kVA] system, it is verified that the developed system has effectiveness of voltage sag compensation by using a supercapacitor EDLC.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.315-318
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• 2009

Hydrogen is the ideal candidate as an alternative energy carrier, so many hydrogen storage methods are investigated. The hydrogen storage method using metal hydride is good candidate as energy sources for portable devices because hydrogen-storage as metal hydride shows large volumetric storage density. In this study, we investigated the variations of hydrogen charging/discharging performance of metal hydride tanks at different temperature conditions. We charged metal hydride tanks with hydrogen in low temperature because of the exothermic reactions of hydrogen absorption while we discharged in high temperature to provide sufficient heat because of the endothermic reactions of desorption. In addition, we investigated the difference of hydrogen charging/discharging performance between two tanks having different sizes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.590-594
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• 2012

ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of $ 7.466{\times}10^{-4}[{\Omega}{\cdot}cm]$ and carrier mobility of 18.6[$cm^2$/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.