• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.574-577
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• 2011

In this study, we use the $2.5cm{\times}7.5cm$ soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes. Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100~175 W with 25 W steps. Base pressure was kept by turbo molecular pump at $3.0{\times}10^{-6}$ torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from $8.1{\times}10^{-2}$ to $1.2{\times}10^{-3}\;{\Omega}{\cdot}cm$. This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.449-453
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• 1996

In order to improve EL performance, anthracene was doped into the 8-hydroxyquinoline-aluminum (Alq$^3$) light-emitting layer of organic double layered EL cells. The EL cells were fabricated on ITO glass substrates by vacuum deposition. Doping of anthracene to the light-emitting $Alq^3$layer was performed by means of co-evaporation. The doping concentration was changed in the range of 5 to 30 wt.%. It was confirmed that anthracene doping of appropriate concentration increased the available current density and brightness of the EL cells. Carrier mobility of the $Alq^3$ layer was measured by time of flight method. The influence of anthracene doping on the cell performance was discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.209.2-209.2
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• 2013

We proposed and fabricated zinc oxide thin-film transistors (TFTs) employing 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD) that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}/cm^3$ to $2.903{\times}10^{17}/cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 $cm^2/Vs$ and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (${\Delta}V_{th}$: 2.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ${\Delta}V_{th}$ shift, respectively.

• Journal of Powder Materials
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• v.13 no.5 s.58
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• pp.313-320
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• 2006

The present study is to analyze the thermoelectric properties of $Bi_{0.4}Sb_{1.6}Te_3$ thermoelectric materials fabricated by the mechanical grinding process. The $Bi_{0.4}Sb_{1.6}Te_3$ powders were prepared by the combination of mechanical milling and reduction treating methods using simply crushed pre-alloyed $Bi_{0.4}Sb_{1.6}Te_3$ powder. The mechanical milling was carried out using the tumbler-ball mill and planetary ball mill. The tumbler-ball milling had an effect on the carrier mobility rather than the carrier concentration, whereas, the latter on the carrier concentration. The specific electric resistivity and Seebeck coefficient decreased with increasing the reduction-heat-treatment time. The thermal conductivity continuously increased with increasing the reduction-heat-treatment time. The figure of merit of the $Bi_{0.4}Sb_{1.6}Te_3$ sintered body prepared by the mechanical grinding process showed higher value than one of the sintered body of the simply crushed powder.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.666-672
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• 2014

We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal $SiO_2$, a plasma-enhanced chemical vapor deposition (PECVD) $SiO_x$, a $150^{\circ}C$-deposited PEVCD $SiO_x$, and a $300^{\circ}C$-deposited PECVD $SiO_x$. Among the devices, the one with the $150^{\circ}C$-deposited PEVCD $SiO_x$ exhibits the best electrical performance including a high field-effect mobility ($=4.86cm^2/Vs$), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localized-trap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.31-35
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• 2020

This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Macromolecular Research
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• v.12 no.4
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• pp.422-426
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• 2004

Solid polymer electrolytes based on poly(ethylene glycol)-polyurethane (PEG-PU) complexed with LiClO$_4$ salt have been prepared by the solvent casting method. A PEG-PU material (PEG:4,4'-diphenylmethane diisocyanate: l,4-butanediol = 1:2:1) was synthesized through a typical two-step condensation reaction. We investigated the effects of the salt concentration on the ionic conductivity ($\sigma$) and the glass transition temperature (T$_{g}$ ) of the complex electrolytes by using alternating current impedance spectroscopy, differential scanning calorimetry, and dynamic mechanical thermal analysis. The measured values of both $\sigma$ and T$_{g}$ exhibited similar tendencies in that they had maxima within the range studied, probably because of two opposite effects, i.e., the increased number of carrier ions and the decreased chain mobility (or increased T$_{g}$ ) caused by the increase in the salt concentration. The highest conductivity, on the order of 2.43 ${\times}$ 10$^{6}$ S$cm^{-1}$ /, was obtained at an [O]/[Li$^{+}$] ratio of ca. 16 (0.92 ㏖ salt per kg of matrix polymer).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.