• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.991-997
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• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• Journal of the Korean Chemical Society
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• v.50 no.1
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• pp.23-31
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• 2006

carbon modified methods were used for the preconcentration and determination of copper in some real samples using the flame atomic absorption spectrometry. The copper ions was adsorbed quantitatively on the activated carbon due to their complexation with 4- amino-2, 3-dimethyl-1-phenyl-3-pyrazoline (ADMPP) or 4-(4- methoxybenzylidenimin) thiophenole (MBITP). The adsorbed copper on solid phase was eluted quantitatively using small amount of nitric acid. The influence of important parameters including pH, amount of carrier, flow rate, amount of activated carbon and type and concentration of eluting agent for obtaining maximum recovery were investigated. The methods based on ADMPP and MBITP at optimum conditions is linear over concentration range of 0.05-1.5 g mL-1 and 0.05-1.2 g mL-1 of copper with correlation coefficient of 0.9997 and 0.9994 and both detection limit of 1.4 ng mL-1, respectively. The preconcentration leads to enrichment factor of 310 and break through volume of 1550 mL for both ligands. The method has a good tolerance limit of interfering ion and a selectivity that has been successfully applied for the determination of copper content in real sample such as tap, spring, river and waste water.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.559-562
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• 2017

In city, tracing of power transmission lines is difficult due to compound installation of overhead and underground lines, transposition, bad view caused by trees or big buildings. It is hard problem for electrical technician on site to trace power transformers or power lines to serve customers in 3 phase -4 wires power distribution systems. It is necessary that the correct and fast tracing method is required for load balancing among distribution lines. Old technology use to trace off-lines with high power impulse injection. Our proposed method use to trace live lines with very small power high frequency signal injection. Typical power transformers in the distribution system prevent propagating the higher frequency carrier signal. The proposed method uses the limited propagation ability to identify the power transformer to serve customers. Two end communication terminals are required to be synchronized between them for determination on electrically same phases. Challenging issue is to achieve synchronization without GPS providing synchronizing time. A novel power transformer and wire identification system is designed and implemented. The system consists of a transmitter and a receiver with power-line communication module. Some experiments are conducted to verify the theoretical concepts in a big commercial building. Also some simulations are done to help and understand the concepts by using MATLAB Simulink simulator.

• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.2
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• pp.139-145
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• 2024

This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (K_vco) variation. To compensate conventional large K_vco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the K_vco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.75-85
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• 2009

This work proposes a 13b 100MS/s 0.13um CMOS ADC for 3G communication systems such as two-carrier W-CDMA applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient high-speed high-resolution gate-bootstrapping circuits are implemented at the sampling switches of the input SHA to maintain signal linearity over the Nyquist rate even at a 1.0V supply operation. The cascode compensation technique on a low-impedance path implemented in the two-stage amplifiers of the SHA and MDAC simultaneously achieves the required operation speed and phase margin with more reduced power consumption than the Miller compensation technique. Low-glitch dynamic latches in sub-ranging flash ADCs reduce kickback-noise referred to the differential input stage of the comparator by isolating the input stage from output nodes to improve system accuracy. The proposed low-noise current and voltage references based on triple negative T.C. circuits are employed on chip with optional off-chip reference voltages. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.70LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 64.5dB and a maximum SFDR of 78.0dB at 100MS/s, respectively. The ABC with an active die area of $1.22mm^2$ consumes 42.0mW at 100MS/s and a 1.2V supply, corresponding to a FOM of 0.31pJ/conv-step.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.31-37
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• 2017

Recently, there has been substantial interest in flexible and wearable devices whose properties and performances are close to conventional devices on hard substrates. Despite the advancement on flexible devices with organic semiconductors or carbon nanotube films, their performances are limited by the carrier scattering at the molecular to molecular or nanotube-to-nanotube junctions. Here in this study, we demonstrate on the vertical semiconductor crystal array embedded in flexible polymer matrix. Such structures can relieve the strain effectively, thereby accommodating large flexural deformation. To achieve such structure, we first established a low-temperature solution-phase synthesis of single crystalline 3D architectures consisting of epitaxially grown ZnO constituent crystals by position and growth direction controlled growth strategy. The ZnO vertical crystal array was integrated into a piece of polydimethylsiloxane (PDMS) substrate, which was then mechanically detached from the hard substrate to achieve the freestanding ZnO-polymer composite. In addition, the characteristics of transferred ZnO were confirmed by additional structural and photoluminescent measurements. The ZnO vertical crystal array embedded in PDMS was further employed as pressure sensor that exhibited an active response to the external pressure, by piezoelectric effect of ZnO crystal.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.29 no.3
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• pp.293-301
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• 2011

The ionospheric delay is the largest error source in GPS positioning after the SA effect has been turned off in May, 2000. In this study, we used 44 permanent GPS stations being operated by National Geographic Information Institute (NGII) to estimate Total Electron Content (TEC) based on pseudorange measurements phase-leveled by a linear combination with carrier phases. The Differential Code Bias (DCB) of GPS satellites and receivers was estimated and applied for an accurate estimation of the TEC. To validate our estimates of DCB, changes of TEC values after DCB application were investigated. As a result, the RMS error went down by about an order of magnitude; from 35~45 to 3~4 TECU. After the DCB correction, ionospheric TEC maps were produced at a spatial resolution of $1^{\circ}{\times}1^{\circ}$. To analyze the effect of the number of sites used for map generation on the accuracy of TEC values, we tried 10, 20, 30, and 44 stations and the RMS error was computed with the Global Ionosphere Map as the truth. While the RMS error was 5.3 TECU when 10 sites are used, the error reduced to 3.9 TECU for the case of 44 stations.

• Asian-Australasian Journal of Animal Sciences
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• v.30 no.4
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• pp.523-530
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• 2017

Objective: Two experiments were conducted to evaluate the effects on growth performance, digestibility, and blood metabolites of lambs during pre- and post-weaning period of inclusion of a commercial probiotic (PRO) containing a mixture of two strains of Pediococcus, Pediococcus acidilactici ($1{\times}10^6$ colony-forming unit [cfu]/g) and Pediococcus pentosaceus ($1.3{\times}10^6cfu/g$), with dextrose as the carrier compound compared to a diet based on concentrate mixture and wheat straw. Methods: In exp. 1, 24 male lambs of about $15{\pm}2.6$ d age and initial body weight (BW) of $5.52{\pm}0.6kg$ were randomly allocated into three groups. One group received control diet without additives, and remainders received control diet supplemented with 0.5 or 1 g PRO/lamb/d. Daily feed intake and biweekly BW were recorded. In exp. 2, five lambs, (initial $BW=29.72{\pm}1.15kg$, $age=6.54{\pm}0.32mo$) were used as experimental animals in a digestion trial. They were fed the same diets as in Exp. 1. Results: The supplementation of PRO did not result in any significant differences in milk intake, average daily gain (ADG), or total gain between treatments during the pre-weaning period. Total dry matter intake tended to be greater (p = 0.07) with addition of PRO in the post-weaning diets. During post-weaning phase, the final BW, ADG, total gain, and feed conversion ratio of the lambs receiving PRO treatments tended to be greater ($p{\leq}0.10$) than the control group. Addition of PRO in post-weaning diet decreased ($p{\leq}0.01$) blood urea and cholesterol concentrations. With the exception of ether extract digestibility, all nutrients digestibility were improved with inclusion PRO in the post-weaning diets. Conclusion: Lambs that received PRO in post-weaning diet appeared to show a better performance than lambs in pre-weaning period. Addition of the probiotic in the post-weaning diet trended towards improved dry matter intake, growth performance, feed conversion ratio, and nutrients digestibility.