• 센서학회지
• /
• 제8권2호
• /
• pp.184-188
• /
• 1999

Pulsed laser deposition법에 의하여 양질의 PbTe 박막을 다양한 기판온도에 따라 성장시켰다. XRD패턴으로 부터 각 온도에서의 PbTe층들은 결정화가 되어있음을 알 수 있었다. 또한 PbTe 박막의 XRD 피크들은 (h00)의 방향성을 나타내고 있다. Pb의 재증발로 인하여 $400^{\circ}C$이상에서는 PbTe 박막은 결정성의 박막으로 형성되지 않았다. AFM 이미지로부터 박막의 표면은 작은 granular 결정들과 평탄한 매트릭스로 구성되어 있음이 관찰되었다. 기판온도의 증가에 따라 표면의 입자들이 커지는 것을 알 수 있었다. Hall-effect 측정으로부터 $300^{\circ}C$에서 성장한 PbTe 박막의 전기적 특성은 $3.68{\times}10^{18}cm^{-3}$의 캐리어 농도와 $148\;cm^2/Vs$의 Hall 이동도를 나타내었다.

• 한국세라믹학회지
• /
• 제30권4호
• /
• pp.325-331
• /
• 1993

Aqueous solutions of metallic salts, ZrO(NO3)2.2H2O and Y(NO3)3.5H2O were used as raw materials to synthesize crystalline submicron spherical powders of Zr0.94Y0.06O1.97 with tetragonal crystal phase. Each aqueous solution was mixed on the magnetic stirrer to homogenize for 12 hours. The concentration of the mixed solutionwas changed from 0.01mol/$\ell$ to 0.1mol/$\ell$ calculated as the concentration of Zr0.94Y0.06O1.97. Ultrafine droplets of starting mixed solution were sprayed by the ultrasonic vibrator and carried into the furnace kept at 55$0^{\circ}C$, $650^{\circ}C$, 75$0^{\circ}C$ and 85$0^{\circ}C$ using carrier gas of air (10$\ell$/min) and pyrolysed to form Y-TZP fine powders. The results of this exeriment were as follows. 1) Synthesized powders were nonagglomerated and spherical type. 2) Particle size distribution was narrow between 0.1${\mu}{\textrm}{m}$ and 1${\mu}{\textrm}{m}$. 3) Forming reaction Y-TZP was finished above synthetic temperature 75$0^{\circ}C$. 4) As the synthetic temperature rised from 55$0^{\circ}C$ to 85$0^{\circ}C$, the mean particle size decreased from 0.35${\mu}{\textrm}{m}$ to 0.22${\mu}{\textrm}{m}$ in the concentration of starting solution with 0.02mol/$\ell$. 5) At 75$0^{\circ}C$ of synthetic temperature, the concentration changes of starting solution from 0.01mol/$\ell$ to 0.1mol/$\ell$ increased the mean particle size from 0.24${\mu}{\textrm}{m}$ to 0.38${\mu}{\textrm}{m}$. 6) Chemical compositions of each synthesized particle were homogeneous nearly.

• International Journal of Control, Automation, and Systems
• /
• 제6권4호
• /
• pp.534-543
• /
• 2008

To use the Global Positioning System (GPS) carrier phase measurement for precise positioning, the integer ambiguities at the early stage of most algorithms must be determined. Furthermore, if a precise positioning is to be applied to real time navigation, fast determination and validation methods for integer ambiguity are essential. In this paper, the Wald test that simultaneously determines and validates integer ambiguities is used with assistance of the Inertial Navigation System (INS) to improve its performance. As the Wald test proceeds, it assigns a higher probability to the candidate that is considered to be true at each time step. The INS information is added during the Wald test process. Large performance improvements were achieved in convergence time as well as in requiring fewer observable GPS satellites. To test the performance improvement of the Wald test with the INS information, experimental tests were conducted using a ground vehicle. The vehicle moved in a prescribed trajectory and observed seven GPS satellites. To verify the effect of the INS information on the Wald test, the convergence times were compared with cases that considered the INS information and cases that did not consider the INS information. The results show that the benefits of using the INS were emphasized as fewer GPS satellites were observable. The performance improvement obtained by the proposed algorithm was shown through the fast convergence to the true hypothesis when using the INS measurements.

• Bulletin of the Korean Chemical Society
• /
• 제30권10호
• /
• pp.2303-2308
• /
• 2009

A thiocyanate poly(vinyl chloride) (PVC) membrane electrode based on [1,2-bis(diphenylphosphino)ethane]dihalopalladium( II), [(dppe)$PdX_2$, X = Cl ($L^1$), X = I ($L^2$)] as active sensor has been developed. The diiodopalladium complex, [(dppe)$PdI_2](L^2$) displays an anti-Hofmeister selectivity sequence: $SCN^-\;>\;I^-\;>\;{ClO_4}^-\;>\;Sal^-\;>\;Br^-\;>\;{NO_2}^-\;>\;{HPO_4}^-\;>\;AcO^-\;>\;{NO_3}^-\;>\;{H_2PO_4}^-\;>\;{CO_3}^{2-}$. The electrode exhibits a Nernstian response (-59.8 mV/decade) over a wide linear concentration range of thiocyanate ($(1.0\;{\times}\;10^{-1}\;to\;5.0\;{\times}\;10^{-6}$ M), low detection limit ($(1.1\;{\times}\;10^{-6}$ M), fast response $(t_{90%}$ = 24 s), and applicability over a wide pH range (3.5∼11). Addition of anionic sites, potassium tetrakis[p-chlorophenyl] borate (KTpClPB) is shown to improve potentiometric anion selectivity, suggesting that the palladium complex may operate as a partially charged carrier-type ionophore within the polymer membrane phase. The reaction mechanism is discussed with respect to UV-Vis and IR spectroscopy. Application of the electrode to the potentiometric titration of thiocyanate ion with silver nitrate is reported.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.446-446
• /
• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• 한국재료학회지
• /
• 제23권2호
• /
• pp.98-103
• /
• 2013

$Mg_{3-x}Zn_xSb_2$ powders with x = 0-1.2 were fabricated by mechanical alloying in a planetary ball mill with a speed of 350 rpm for 24 hrs and then hot pressed under a pressure of 70 MPa at 773 K for 2 hrs. It was found that there were systematic shifts in the X-ray diffraction peaks of $Mg_3Sb_2$ (x = 0) toward a higher angle with increasing Zn for both the powder and the bulk sample and finally the phase of $Mg_{1.86}Zn_{1.14}Sb_2$ was formed at the Zn content of x = 1.2. The $Mg_{3-x}Zn_xSb_2$ compounds had nano-sized grains of 21-30 nm for the powder and 28-66 nm for the hot pressed specimens. The electrical conductivity of hot pressed $Mg_{3-x}Zn_xSb_2$ increased with increasing Zn content and temperature from 33 $Sm^{-1}$ for x = 0 to 13,026 $Sm^{-1}$ for x = 1.2 at 323 K. The samples for all the compositions from x = 0 to x = 1.2 had positive Seebeck coefficients, which decreased with increasing Zn content and temperature, which resulted from the increased charge carrier concentration. Most of the samples had relatively low thermal conductivities comparable to the high performance thermoelectric materials. The dimensionless figure of merit of $Mg_{3-x}Zn_xSb_2$ was directly proportional to the Zn content except for the compound with Zn = 1.2 at high temperature. The $Mg_{3-x}Zn_xSb_2$ compound with Zn = 0.8 had the largest value of ZT, 0.33 at 723 K.

• Journal of Power Electronics
• /
• 제16권6호
• /
• pp.1991-2004
• /
• 2016

An LC filter is required to reduce the output current ripple in the auxiliary resonant snubber inverter (ARSI) for high-performance applications. However, if the traditional control method is used in the ARSI with LC filter, then unnecessary current flows in the auxiliary circuit. In addressing this problem, a novel load-adaptive control that fully uses the filter inductor current ripple to realize the soft-switching of the main switches is proposed. Compared with the traditional control implemented in the ARSI with LC filter, the proposed control can reduce the required auxiliary current, contributing to higher efficiency and DC-link voltage utilization. In this study, the detailed circuit operation in the light load mode (LLM) and the heavy load mode (HLM) considering the inductor current ripple is described. The characteristics of the improved ARSI are expressed mathematically. A prototype with 200 kHz switching frequency, 80 V DC voltage, and 8 A maximum output current was developed to verify the effectiveness of the improved ARSI. The proposed ARSI was found to successfully operate in the LLM and HLM, achieving zero-voltage switching (ZVS) of the main switches and zero-current switching (ZCS) of the auxiliary switches from zero load to full load. The DC-link voltage utilization of the proposed control is 0.758, which is 0.022 higher than that of the traditional control. The peak efficiency is 91.75% at 8 A output current for the proposed control, higher than 89.73% for the traditional control. Meanwhile, the carrier harmonics is reduced from -44 dB to -66 dB through the addition of the LC filter.

• 대한공간정보학회지
• /
• 제10권3호
• /
• pp.107-114
• /
• 2002

국토의 효율적인 관리와 운영을 위해서 지적측량의 정립이 요구되는 실정이며 국가 지리정보체계의 자료기반 구축을 위해 지적측량의 확립이 필요하다. 대부분의 GPS 적용은 실시간으로 이동국에서 수 cm의 정확도를 요구하지만 더 높은 측위 정확도를 성취하기 위해서는 반송파를 이용한 이중차 기법으로 성취될 수 있다. 이 방법은 기준국과 이동국의 자료 연결 장치를 이용하여 기준국 보정값을 이동국에 전송하며, 이동국에 수신된 보정값은 기준국과 이동국 수신기 사이의 차분 관측값을 형성하여 이동국 관측값에 적용됨으로 고정확도 위치를 획득한다. 본 연구에서는 이러한 실시간 동적 GPS를 이용하여 지적측량에 적용함으로서 일필지의 면적을 산출하고, 이를 토지대장과 TS 관측에 의한 면적과 비교하여 평균오차가 최소 $2.42m^{2}\;{\sim}$ 최대 13.69m^{2}를 나타내었으며, RMSE는 최소 $0.00329{\sim}$ 최대 0.01846를 나타내었다.

• 전기전자학회논문지
• /
• 제24권1호
• /
• pp.19-24
• /
• 2020

본 논문은 FPGA의 언어 중 하나인 Verilog HDL을 사용한 100 kHz 스위칭의 3-레벨, 2-레벨 SVPWM 기법을 구현에 대한 것이다. 인버터에 주로 사용되는 IGBT소자의 경우 주로 20 kHz 근방에서 스위칭 주파수를 가진다. 최근 차세대 전력 반도체 소자의 연구 개발로 100 kHz 이상의 스위칭을 구현하여 전력변환기를 소형화하고, 고조파의 주입에 따른 여러 가지 새로운 알고리즘의 적용이 가능하게 되었다. IGBT를 이용하는 기존의 시스템에서는 DSP를 이용한 제어가 이루어지는 것이 통상적이나, 100 kHz 스위칭을 위한 제어기 구성으로는 FPGA를 이용한 제어기의 적용이 요구된다. 따라서 본 논문에서는 FPGA를 사용하여 2-레벨 인버터와 3-레벨 인버터에 적용되는 SVPWM의 이론과 FPGA 구현에 대하여 설명하고 SVPWM의 출력 파형을 통해 구현 성능을 확인한다. 한편, 본 논문에서는 3-레벨 인버터에서 SVPWM 구현 시 기존의 방식에서 반송파 2개를 사용하는 방법을 대신하여 반송파 1개만을 사용하는 기법으로 3-레벨 SVPWM을 구현한다.

• 한국정보통신학회논문지
• /
• 제18권7호
• /
• pp.1652-1656
• /
• 2014

본 논문에서는 차량 충돌 방지 레이더 시스템 응용을 위하여 중심 주파수가 77 GHz인 도파관 (waveguide) 전압조정 발진기 (VCO, voltage controlled oscillator)를 구현하였다. 구현된 도파관 전압 조정 발진기는 GaAs 기반의 건다이오드 (Gunn diode)와 버랙터 다이오드 (varactor diode), 도파관 천이기 (waveguide transition), 저역 통과 필터(LPF, low pass filter) 및 공진기 (resonator) 기능을 동시에 수행하는 다이오드의 바이어스 (bias) 포스트 (post)로 구성되어진다. 77 GHz 신호는 동공 (cavity)을 38.50 GHz에서 발진하도록 설계하여 2체배된 신호를 사용하였으며 WR-12에서 WR-10으로 천이되어 출력된다. 도파관 천이기는 77 GHz의 중심주파수에서 1.86 dB의 삽입손실(insertion loss)과 -30.22 dB의 입력반사계수 (S11, input reflection coefficient) 특성을 갖는다. 제작된 도파관 전압조정 발진기는 870 MHz의 대역폭 (bandwidth)과 12.0 dBm ~ 13.75 dBm의 출력 전력 특성을 나타내었다. 위상잡음 특성은 1 MHz 오프셋 (offset)에서 -100.78 dBc/Hz의 우수한 특성을 얻었다.