• 분석과학
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• 제11권3호
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• pp.156-160
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• 1998

다양한 탄소재와 Si를 함유하는 화합물로부터 SiC를 합성하였고, XRD 분석으로부터 구조적 특성 연구와 DSC 분석에 의한 열역학적 연구를 통하여 졸-겔법과 carbothermal 반응법을 비교연구하였다. 졸-겔법보다는 carbothermal 반응법에 의한 합성이 SiC의 형성을 뚜렷하게 하였다. X-선 회절결과로부터 여러가지 탄소재의 SiC 형성 정도는 두 방법 모두 석유 코크스, 활성탄, 인조흑연의 순으로 증가함을 알 수 있었다. 그리고 DSC 분석결과로부터 발열반응에 대한 엔탈피 변화량은 carbothermal 반응법의 경우 활성탄, 석유 코크스, 인조흑연의 순으로 감소하였고, 흡열반응에 대한 변화량은 역순으로 증가하였다. 그러나 졸-겔법의 경우 발열반응에 대한 엔탈피 변화량은 석유 코크스, 활성탄, 인조흑연의 순으로 감소하였다.

• 한국분말재료학회지
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• 제10권4호
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• pp.281-287
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• 2003

Ultrafine TiC-15%Co powders were synthesized by a thermochemical process, including spray drying, calcination, and carbothermal reaction. Ti-Co oxide powders were prepared by spray drying of aqueous solution of titanium chloride and $Ti(OH)_2$ slurry, both containing cobalt nitrate, fellowed by calcination. The oxide powders were mixed with carbon powder to reduce and carburize at 1100~125$0^{\circ}C$ under argon or hydrogen atmosphere. Ultrafine TiC particles were formed by carbothermal reaction at 1200~125$0^{\circ}C$, which is significantly lower than the formation temperature (~1$700^{\circ}C$) of TiC particles prepared by conventional method. The oxygen content of TiC-15%Co powder synthesized under hydrogen atmosphere was lower than that synthesized under argon, suggesting that hydrogen accelerates the reduction rate of Ti-Co oxides. The size of TiC-15%Co powder was evaluated by FE-SEM and TEM and Identified to be smaller than 300 nm.

• 한국세라믹학회지
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• 제44권6호
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• pp.331-337
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• 2007

High temperature reaction behaviors of various oxide materials (such as bauxite, pyrophyllite, mullite and fused silica powders) used in the refractory materials for tap-hole plugging of blast furnace were investigated with varying temperature in the carbon surrounding. Kinetics of carbothermal reduction of $SiO_2$ for forming SiC with high corrosion resistance were strongly dependent on it's crystalline phase. SiC generation yield increased with increasing catalyst amount in oxide regardless of generated SiO gas amount at temperature of $<1500^{\circ}C$. However, in case of fused silica over $1500^{\circ}C$, SiC generation yield was dominantly influenced by SiO amount without catalyst effect. Bauxite showed the most effective carbothermal reduction reaction, since bauxite have a large amount of catalyst and well-dispersed $SiO_2$ phase in oxide matrix.

• 한국분말재료학회지
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• 제15권2호
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• pp.107-113
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• 2008

Ultrafine TiC-5%Co powders were synthesized by spray drying of aqueous solution of TiO$(OH)_2$ slurry and cobalt nitrate, followed by calcination and carbothermal reaction. The oxide powders with carbon powder was reduced and carburized at $900^{\circ}C{\sim}1250^{\circ}C$ under hydrogen atmosphere. During reduction, CO gas was mainly evolved by reducing reaction of oxides. Ultrafine TiC-5%Co powders were easily formed by carbothermal reaction at $1250^{\circ}C$ due to using ultrafine powders as raw materials. The ultrafine WC-TiC-Co alloy prepared by sintering of mixed powder of ultrafine WC-13%Co powder and ultrafine TiC-5%Co powder has higher sintered density and mechanical properties than WC-TiC-Co alloy prepared by commercial WC, TiC and Co powders.

• 한국분말재료학회지
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• 제13권6호
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• pp.432-438
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• 2006

Aluminum nitride (AlN) nanopowders with low degree of agglomeration and uniform particle size were synthesized by carbothermal reduction of alumina and subsequent direct nitridization. Boehmite powder was homogeneously admixed with carbon black nanopowders by ball milling. The powder mixture was treated under ammonia atmosphere to synthesize AlN powder at lour temperature. The effect of process variables such as boehmite/carbon black powder ratio, reaction temperature and reaction time on the synthesis of AlN nanopowder was investigated.

• 한국세라믹학회지
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• 제35권12호
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• pp.1249-1256
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• 1998

${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.387-387
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• 2012

그래핀(graphene)의 가장자리(edge)는 결정구조의 배향성에 따라 지그재그(zigzag)와 안락의자 (armchair) 형태로 구분되는데, 나노미터 크기의 그래핀의 전자적 성질은 이러한 가장자리의 배향성에 의해 크게 영향을 받는다고 알려져 있다. 단일층 그래핀 가장자리 사이에서 일어나는 산화실리콘($SiO_2$)의 carbothermal reduction은 선택적으로 지그재그 형태의 가장자리를 생성한다고 알려져 있다. 본 연구에서는 라만 분광법과 원자 현미경(atomic force microscopy)을 이용하여 기계적 박리법으로 만들어진 이중층 그래핀에서 일어나는 carbothermal reaction을 연구하였다. 고온 산화 방법으로 이중층 그래핀에 원형 식각공(etch pit)을 만들고 Ar 기체 속에서 700도 열처리를 진행한 후, 원형 식각공이 육각형으로 확장된 것을 관찰하였다. 이것은 이중층 그래핀도 산화실리콘의 carbothermal reduction을 유발한다는 사실을 보여준다. 그러나 이중층 그래핀의 반응속도는 단일층보다 느린 것이 확인되었는데, 이는 이중층 그래핀의 탄소 원자와 산화제로 작용하는 산화실리콘 간의 평균 거리가 단일층보다 더 크다는 사실로 설명할 수 있다. 또한 본 연구에서는 반응기 내의 압력이 반응 속도에 미치는 영향과 식각공이 육각형으로 변해가는 과정에 대한 라만 분광 특성을 조사 및 분석하였다.

• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Carbon letters
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• 제8권2호
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• pp.91-94
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• 2007

The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

• 한국세라믹학회지
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• 제41권2호
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• pp.118-124
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• 2004

탄소환원질화법에 의해 합성된 질화알루미늄의 물성은 출발물질의 종류, 액상$.$기상 반응물질의 양, 분위기 그리고 합성온도에 따라서 많은 차이를 나타내었다 질화알루미늄 합성을 위하여 Al원으로는 $\alpha$-A1$_2$O$_3$를 사용하였고 환원제로는 카본 블랙을 사용하였으며, 기상반응을 유도하기 위하여 AlF$_3$를 사용하여 고순도 질소분위기에서 실험을 행하였다. 또한 액상반응 시 미세구조상의 변화를 확인하기 위하여 금속 알루미늄을 첨가하여 실험을 행하였다. 질화알루미늄이 생성과 침상형 휘스커상의 형상은 1$600^{\circ}C$의 온도에서 가장 잘 나타났으며 열처리 온도의 상승은 오히려 휘스커상의 형성을 방해하고 있음을 보여주었다. 침상형 휘스커의 합성에 가장 큰 영향을 주는 것은 기상반응을 일으키는 AlF$_3$ 첨가이며, AlF$_3$의 첨가량이 증가함에 따라 침상형 휘스커상을 확인하였다. 액상반응을 위한 금속 알루미늄 첨가는 전체의 15wt%까지는 침상형 휘스커가 증가하고 있음을 나타내었으나 l5wt% 이상으로 첨가하는 경우 오히려 휘스커가 감소하는 것으로 나타났다.