• 제목/요약/키워드: Carbon film

검색결과 1,327건 처리시간 0.032초

Low-Temperature Plasma Enhanced Chemical Vapor Deposition Process for Growth of Graphene on Copper

  • ;장해규;채희엽
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.433-433
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    • 2013
  • Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

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Surface Order of Hexagonal Columnar Mesophases Induced by Molecular Assembly

  • Kim, Sang-Ouk;Ko, Young-Koan;Yoon, Dong-Ki;Kang, Sang-Yoon;Jung, Hee-Tae
    • KIEE International Transactions on Electrophysics and Applications
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    • 제11C권2호
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    • pp.32-36
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    • 2001
  • We investigate the surface order, defects and morphology of hexagonal columnar mesophases, Having a crown ether at one end which forms the center of the column and three fluorinated tails at the other, The orientation of the columns was successfully controlled by surface anchoring: Columns were aligned perpendicularly to an evaporated carbon surface, and the planar alignment do asymmetric compounds was induced by a water surface. TEM images show that there is a high degree of perfection in the packing do the cylinders. The hexagonal columnar mesophase (F(sub)h) was confirmed by direct images and the corresponding electron diffractions, where ordered cylindrical moieties are packed on a hexagonal lattice. The column of 12F8-ABG-15C5 was much straighter, compared with that of 12F8-AG-B15C5, resulting from the degrees of regular stacking. Elementary edge dislocation, grain boundary and +1/2 disclination have been observed, although the defects are generally rare.

$CH_4-H_2-O_2$계로부터 성장된 Diamond 박막의 Raman spectra (Raman spectra of Diamond thin film grown from $CH_4-H_2-O_2$ system)

  • 구효근;박승태;최종규;박상현;박재철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1490-1492
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    • 1994
  • Diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPECVD at the condition of power of 800W, pressure of 80torr, $H_2$ flow rate of $75{\sim}81sccm$, $O_2$ flow rate of $0{\sim}3.8sccm$, $CH_4$ flow rate of $4.8{\sim}9sccm$, substrate temp, of $950{\sim}1010^{\circ}C$ and deposition time of 5hr. The deposited films were characterized by SEM, XRD and Raman spectroscopy. The growth rates of thin films and particles was measured. Good quality were synthesized at 40% of oxygen concentration which 6% of fixed metane concentration, and at 50%. Its deposition rates were $2.4{\mu}m/h$ respectively. As oxygen concentration increased, it was known that the broad peak of $1350 cm^{-1}$ was shifted to $1332cm^{-1}$ due to etching of carbon component.

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Poly-3,4-dihydroxybenzaldehyde Modified with 3,4-dihydroxybenzoic acid for Improvement of Electrochemical Activities

  • Cha Seong-Keuck
    • 전기화학회지
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    • 제7권4호
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    • pp.167-172
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    • 2004
  • 3,4-dihydroxybenzaldehyde(3,4-DHB) was oxidatively el electropolymerized on glassy carbon (GC) electrodes to prepare CC/p-3,4-DHB type electrodes, which were subsequently modified with 3,4-dihydroxybenzoic acid(3,4-DHBA) using 0.05M HCI as a catalyst. The esterification reactions were performed between -OH sites on the polymeric film surface of the p-3,4-DHB and the -COOH sites within the 3,4-DHBA molecules in solution. These reactions had a rate constant value of $1.1\times10^{-1}\;s^{-1}$ for the esterification step as obtained from the first-order rate constant in the solution. The electrochemical responses of the GC/p-3,4-DHB-3,4-DHBA electrodes exert an influence upon the buffer solution, its pH and applied potential ranges. The redox process of the electrode was more easily controlled by charge transfer kinetics than that of the CC/p-3,4-DHB. The modified electrodes had redox active sites that were 10 times more active than those present before modification. The electrical admittance of the modified electrodes was also three times higher than that of the unmodified electrodes. After being annealed in ethanol for 20 hrs the electrodes brought about a 3.3 times greater change of water molecules in the redox reaction. The modified electrodes are stable in the potential range of 0.4 to 0.55V.

Composite Materials with MWCNTs and Conducting Polymer Nanorods and their Application as Supercapacitors

  • Liua, Lichun;Yoo, Sang-Hoon;Park, Sung-Ho
    • Journal of Electrochemical Science and Technology
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    • 제1권1호
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    • pp.25-30
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    • 2010
  • This study demonstrated the synthesis of high-surface-area metal-free carbonaceous electrodes (CE) from anodic aluminum oxide (AAO) templates, and their application as supercapacitors. Multi-walled Carbon nanotubes (MWCNTs) were interwoven into a porous network sheet that was attached to one side of AAO template through a vacuum filtration of the homogeneously dispersed MWCNT toluene solution. Subsequently, the conducting polymer was electrochemically grown into the porous MWCNT network and nanochannels of AAO, leading to the formation of a carbonaceous metal-free film electrode with a high surface area in the given geometrical surface area. Typical conducting polymers such as polypyrrole (PPY) and poly(3,4-ethylenedioxythiophene) (PEDOT) were examined as model systems, and the resulting electrodes were investigated as supercapacitors (SCs). These SCs exhibited stable, high capacitances, with values as high as 554 F/g, 1.08 F/$cm^2$ for PPY and 237 F/g, 0.98 F/$cm^2$ for PEDOT, that were normalized by both the mass and geometric area.

RF 유도형 플라즈마 프로세스에 대한 분광학적 연구 (A Study on the Optical Emission Spectroscopy of the RF Inductive Plasma Process)

  • 장문국;한상보;박상현
    • 조명전기설비학회논문지
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    • 제25권11호
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    • pp.103-112
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    • 2011
  • This paper is tried to analysis the optical emission spectroscopy related to the position of inductive load coil and flow rates of methane and oxygen in the RF inductive plasma process. According to the position of load coil, peak of $H_{\alpha}$, $H_{\beta}$, and CH were appeared strongly at the middle position of the coil and it decreased both direction. The electron temperature was approximately 0.9[eV] at that position. Emission intensities of $H_{\alpha}$, $H_{\beta}$, and CH increased linearly by increasing input power. In addition, intensities of $H_{\alpha}$ and $H_{\beta}$ increased by increasing the flow rate of oxygen. It might be ascribed that the oxygen species were bonded with $C_nH_m$ by suppressing the combination with hydrogen atoms. Consequently, the optimal position of the inductive coil is decided to the intermediate position between 4th and 5th turns, the wanted carbon thin-film is possible to deposit by controlling flow rates of methane and oxygen.

$CF_4$/Ar 플라즈마 내 $Cl_2$첨가에 의한 $SrBi_{2}Ta_{2}O_{9}$ 박막의 식각 특성 (Etching Characteristics of $SrBi_{2}Ta_{2}O_{9}$ Thin Film with Adding $Cl_2$ into $CF_4$/Ar Plasma)

  • 김동표;김창일;이원재;유병곤;김태형;장의구
    • 한국전기전자재료학회논문지
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    • 제14권9호
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    • pp.714-719
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    • 2001
  • SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.

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Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

  • Jung, Soon-Won;Na, Bock Soon;Baeg, Kang-Jun;Kim, Minseok;Yoon, Sung-Min;Kim, Juhwan;Kim, Dong-Yu;You, In-Kyu
    • ETRI Journal
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    • 제35권4호
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    • pp.734-737
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    • 2013
  • Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

액체로켓엔진 노즐확장부 소재기술 동향 (Material Trends of Nozzle Extension for Liquid Rocket Engine)

  • 이금오;유철성;최환석
    • 항공우주산업기술동향
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    • 제9권1호
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    • pp.139-149
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    • 2011
  • 액체 로켓 엔진의 연소기는 높은 온도의 연소가스를 발생시키므로 연소실과 노즐은 열적으로 보호되어야 한다. 고공 엔진의 노즐확장부도 고열에 견딜 수 있게 설계되어야 하며, 이를 위하여 가스냉각, 삭마냉각, 복사냉각등 다양한 방법의 냉각이 적용되고 있다. 특히 큰 노즐 팽창비를 갖는 상단엔진의 경우 무게가 발사체 성능에 미치는 영향이 크므로 경량 내열 소재가 개발되어 사용되어 왔다. 미국과 러시아, 유럽에서 사용되어 온 노즐확장부 재료를 조사한 결과 스테인리스강과 티타늄합금과 같은 무거운 금속 재료에서 경량의 탄소섬유 강화 복합재 또는 세라믹 복합재로 바뀌어 가는 경향이 파악되었다.

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산소 플라즈마를 이용하여 원거리 플라즈마 원자층 증착법으로 형성된 하프늄 옥사이드 게이트 절연막의 특성 연구 (Characteristics of Hafnium Oxide Gate Dielectrics Deposited by Remote Plasma-enhanced Atomic Layer Deposition using Oxygen Plasma)

  • 조승찬;전형탁;김양도
    • 한국재료학회지
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    • 제17권5호
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    • pp.263-267
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    • 2007
  • Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.