• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.433-433
• /
• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.11C no.2
• /
• pp.32-36
• /
• 2001

We investigate the surface order, defects and morphology of hexagonal columnar mesophases, Having a crown ether at one end which forms the center of the column and three fluorinated tails at the other, The orientation of the columns was successfully controlled by surface anchoring: Columns were aligned perpendicularly to an evaporated carbon surface, and the planar alignment do asymmetric compounds was induced by a water surface. TEM images show that there is a high degree of perfection in the packing do the cylinders. The hexagonal columnar mesophase (F(sub)h) was confirmed by direct images and the corresponding electron diffractions, where ordered cylindrical moieties are packed on a hexagonal lattice. The column of 12F8-ABG-15C5 was much straighter, compared with that of 12F8-AG-B15C5, resulting from the degrees of regular stacking. Elementary edge dislocation, grain boundary and +1/2 disclination have been observed, although the defects are generally rare.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1490-1492
• /
• 1994

Diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPECVD at the condition of power of 800W, pressure of 80torr, $H_2$ flow rate of $75{\sim}81sccm$, $O_2$ flow rate of $0{\sim}3.8sccm$, $CH_4$ flow rate of $4.8{\sim}9sccm$, substrate temp, of $950{\sim}1010^{\circ}C$ and deposition time of 5hr. The deposited films were characterized by SEM, XRD and Raman spectroscopy. The growth rates of thin films and particles was measured. Good quality were synthesized at 40% of oxygen concentration which 6% of fixed metane concentration, and at 50%. Its deposition rates were $2.4{\mu}m/h$ respectively. As oxygen concentration increased, it was known that the broad peak of $1350 cm^{-1}$ was shifted to $1332cm^{-1}$ due to etching of carbon component.

• Journal of the Korean Electrochemical Society
• /
• v.7 no.4
• /
• pp.167-172
• /
• 2004

3,4-dihydroxybenzaldehyde(3,4-DHB) was oxidatively el electropolymerized on glassy carbon (GC) electrodes to prepare CC/p-3,4-DHB type electrodes, which were subsequently modified with 3,4-dihydroxybenzoic acid(3,4-DHBA) using 0.05M HCI as a catalyst. The esterification reactions were performed between -OH sites on the polymeric film surface of the p-3,4-DHB and the -COOH sites within the 3,4-DHBA molecules in solution. These reactions had a rate constant value of $1.1\times10^{-1}\;s^{-1}$ for the esterification step as obtained from the first-order rate constant in the solution. The electrochemical responses of the GC/p-3,4-DHB-3,4-DHBA electrodes exert an influence upon the buffer solution, its pH and applied potential ranges. The redox process of the electrode was more easily controlled by charge transfer kinetics than that of the CC/p-3,4-DHB. The modified electrodes had redox active sites that were 10 times more active than those present before modification. The electrical admittance of the modified electrodes was also three times higher than that of the unmodified electrodes. After being annealed in ethanol for 20 hrs the electrodes brought about a 3.3 times greater change of water molecules in the redox reaction. The modified electrodes are stable in the potential range of 0.4 to 0.55V.

• Journal of Electrochemical Science and Technology
• /
• v.1 no.1
• /
• pp.25-30
• /
• 2010

This study demonstrated the synthesis of high-surface-area metal-free carbonaceous electrodes (CE) from anodic aluminum oxide (AAO) templates, and their application as supercapacitors. Multi-walled Carbon nanotubes (MWCNTs) were interwoven into a porous network sheet that was attached to one side of AAO template through a vacuum filtration of the homogeneously dispersed MWCNT toluene solution. Subsequently, the conducting polymer was electrochemically grown into the porous MWCNT network and nanochannels of AAO, leading to the formation of a carbonaceous metal-free film electrode with a high surface area in the given geometrical surface area. Typical conducting polymers such as polypyrrole (PPY) and poly(3,4-ethylenedioxythiophene) (PEDOT) were examined as model systems, and the resulting electrodes were investigated as supercapacitors (SCs). These SCs exhibited stable, high capacitances, with values as high as 554 F/g, 1.08 F/$cm^2$ for PPY and 237 F/g, 0.98 F/$cm^2$ for PEDOT, that were normalized by both the mass and geometric area.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.25 no.11
• /
• pp.103-112
• /
• 2011

This paper is tried to analysis the optical emission spectroscopy related to the position of inductive load coil and flow rates of methane and oxygen in the RF inductive plasma process. According to the position of load coil, peak of $H_{\alpha}$, $H_{\beta}$, and CH were appeared strongly at the middle position of the coil and it decreased both direction. The electron temperature was approximately 0.9[eV] at that position. Emission intensities of $H_{\alpha}$, $H_{\beta}$, and CH increased linearly by increasing input power. In addition, intensities of $H_{\alpha}$ and $H_{\beta}$ increased by increasing the flow rate of oxygen. It might be ascribed that the oxygen species were bonded with $C_nH_m$ by suppressing the combination with hydrogen atoms. Consequently, the optimal position of the inductive coil is decided to the intermediate position between 4th and 5th turns, the wanted carbon thin-film is possible to deposit by controlling flow rates of methane and oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.9
• /
• pp.714-719
• /
• 2001

SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.

• ETRI Journal
• /
• v.35 no.4
• /
• pp.734-737
• /
• 2013

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

• Current Industrial and Technological Trends in Aerospace
• /
• v.9 no.1
• /
• pp.139-149
• /
• 2011

The combustion chamber and nozzle of a liquid rocket engine need thermal protection against the high temperature combustion gas. The nozzle extension of a high-altitude engine also has to be compatible with high temperature environment and several kinds of cooling methods including gas film cooling, ablative cooling and radiative cooling are used. Especially for an upper-stage nozzle extension having a large expansion ratio, the weight impact on the launcher performance is crucial and it necessitated the development of light-weight refractory material. The present survey on the nozzle extension materials employed in the liquid rocket engines of USA, Russia and European Union has revealed a trend that the heavier metals like stainless steels and titanium alloys are being substituted with light weight carbon fiber or ceramic matrix composite materials.

• Korean Journal of Materials Research
• /
• v.17 no.5
• /
• pp.263-267
• /
• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.