• Macromolecular Research
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• v.16 no.2
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• pp.103-107
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• 2008

Carbon nanodots were prepared by the pyrolysis of a triblock copolymer. The triblock copolymer, poly(methyl methacrylate)-b-polystyrene-b-poly(methyl methacrylate) was synthesized by atom transfer radical polymerization using an initiator containing a diacetylene group. A polymer thin film on a mica substrate was prepared by spin-casting at 2,000 rpm from a 0.5 wt% toluene solution of the triblock copolymer. After drying, the cast film was vacuum-annealed for 48 h at $160^{\circ}C$. The annealed film formed a spherical morphology of polystyrene domains with a diameter of approximately 30 nm. The film was exposed to UV irradiation to induce a cross-linking reaction between diacetylene groups. In the subsequent pyrolysis at $800^{\circ}C$, the cross-linked polystyrene spheres were carbonized and the poly(methyl methacrylate) matrix was eliminated, resulting in carbon nanodots deposited on a substrate with a diameter of approximately 5 mn.

• Textile Coloration and Finishing
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• v.22 no.1
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• pp.43-50
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• 2010

The thermal treatment for carbon nanotube was applied to remove the water, metal catalyst and other impurities in carbon nanotube. The surface of carbon nanotube was changed into open structure with acid treatment by mixed solution of $HNO_3$ and $H_2SO_4$. The dispersion property of the functionalized and modified carbon nanotube was assessed with naked eyes by dispersing it in DMF. Carbon nanotube mixd polyurethane film was made to estimate the dispersion property by reflectance of the film with UV-Vis spectrometer. Also the internal structure of carbon nanotube was observed with SEM and TEM and thermal pyrolysis property of the carbon nanotube was measured by TGA and DSC. The surface modification of carbon nanotube by thermal and acid treatments improved the dispersion property of carbon nanotube/polyurethane mixed materials.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.293-298
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• 2001

EB-NMP free standing film is manufactured from NMP solution of polyaniline(emeraldine base EB). Also ES(emeraldine salt EB . HCl) film is manufactured by doping of EB-NMP film with 1 mole HCI aqueous solution. And EB-mixture films containing conductor(carbon black, graphite, Ag etc.) are prepared, In this study, electromagnetic interference shielding efficiency(EMI SE) of ES free standing film ($\sigma$=5 S/cm, t=0.14mm) is 23~25 dB in the frequency range of 10 MHz~1 GHz. ES-mixture(carbon black, graphite, Ag etc.) films, polyaniline film doped camphorsulfonic acid(CSA) show higher EMI SE(30~34 dB, 36~42 dB, 44~52 dB, 34~43 dB) property than that of ES free standing film, respectively.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.247-252
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• 2004

노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.772-779
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• 2000

The friction and wear behavior of short carbon fiber reinforced polyetheretherketone was studied experimentally under dry sliding conditions against SCM440(AISI 4140) disks with a different surface roughness and hardness at the low sliding speeds and the high pressures on a pin-on-disk apparatus. Under the low disk surface roughness value the earsplitting noise and stick-slip were occurred. The increased adhesion friction and wear factor with stick-slip made the friction and wear behavior worse. Under the high disk surface hardness the break and falling-off of carbon fibers were accelerated. The carbon fibers fallen off from the matrix were ground into powder between two wear surfaces and this phenomenon caused a abrasive friction and wear factor to increase. So the friction and wear behavior became worse. With the transfer film made of wear particles formed on a disk, the carbon powder film formed on a pin lowered a friction coefficient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1121-1124
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• 2004

Carbon Nitride exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) films. These diamond-like transport properties in Carbon Nitride come in a material consisting of $sp^2$-bonded carbon versus the $sp^3$-carbon of DLC. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. Liquid crystal (LC) alignment capabilities with ion beam exposure on carbon nitride thin films and Electro-Optical (EO) performances of the ion-beam aligned twisted nematic liquid crystal display (TN-LCD) with oblique ion beam exposure on the Carbon Nitride thin film surface were studied. An excellent uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the Carbon Nitride thin films was observed. In addition, the good EO properties of the ion-beam-aligned TN-LCD were achieved. Finally, we achieved the residual DC property of the ion-beam- aligned TN-LCD on the Carbon Nitride thin film.