• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.252-256
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• 2014

The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at $700-1000^{\circ}C$. It displayed relatively good oxidation resistance owing to the formation of $TiO_2$, $Al_2O_3$, $Cr_2O_3$, and $SiO_2$ up to $900^{\circ}C$. However, at $1000^{\circ}C$, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.381-388
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• 2003

Directional solidification experiments were carried out at 0.5-150 $\mu\textrm{m}$/s in the Co-base superalloy ECY 768. As increasing solidification rate, the dendrite length increased and it reached the maximum at 150 $\mu\textrm{m}$/s, where the tip temperature is close to the liquidus. The liquidus and eutectic temperatures could be estimated by comparing the dendrite lengths and the temperature gradients at the solid/liquid interface and those were estimated as $1424.6^{\circ}C$ and $1343^{\circ}C$ respectively. Between the dendrites just below final freezing temperature, MC carbide and $M_{23}$$C_{6}$ carbide were found. It was confirmed that the script or blocky shape was Ta or W-rich MC carbide, and the lamellar shape was Cr-rich eutectic carbide. The solid/liquid interface morphology clearly showed that the Cr-rich eutectic carbide formed just after the script type MC carbide.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.693-698
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• 2002

Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.315-323
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• 1991

The preparation of zirconium carbide powders by the halogenide process of ZrCl4-C-Mg system (1:1:2, molar ratio) was studied between 300。 and 120$0^{\circ}C$ under Ar gas flow (200 mι/min). The formation mechanism and kinetics of zirconium carbide and characteristics of the synthesized powder were examined by TG-DTA, XRD, SEM and PSA. 1) The formation mechanism of zirconium carbide were as follows, above 30$0^{\circ}C$ ZrCl4(S)+Mg(s)longrightarrowZrCl2(s)+MgCl2(s) above 40$0^{\circ}C$ ZrCl2(S)+Mg(s)longrightarrowZr(s)+MgCl2(s) above 50$0^{\circ}C$ Zr(s)+C(s)longrightarrowZrC(s) 2) The apparent activation energy of the reduction-carbonization at temperature of 800$^{\circ}$to 100$0^{\circ}C$ was 11.9 kcal/mol. 3) The lattice parameter and the crystallite size of ZrC which was produced from the mixture powder of ZrCl4, C and Mg (1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were 4.700A and 180A, respectively. 4) The powders obtained from the mixture powder of ZrCl4, C and Mg(1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were agglomerate with the average size of about 13${\mu}{\textrm}{m}$ in SEM micrograph.

• Journal of Korea Foundry Society
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• v.17 no.4
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• pp.371-378
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• 1997

The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.

• Corrosion Science and Technology
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• v.14 no.6
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• pp.313-324
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• 2015

Austenitic stainless steels have been widely used in many engineering fields because of their high corrosion resistance and good mechanical properties. However, welding or aging treatment may induce intergranular corrosion, stress corrosion cracking, pitting, etc. Since these types of corrosion are closely related to the formation of chromium carbide in grain boundaries, the alloys are controlled using methods such as lowering the carbon content, solution heat treatment, alloying of stabilization elements, and grain boundary engineering. This work focused on the effects of aging and UNSM (Ultrasonic Nano-crystal Surface Modification) on the intergranular corrosion of commercial 316L stainless steel and the results are discussed on the basis of the sensitization by chromium carbide formation and carbon segregation, residual stress, grain refinement, and grain boundary engineering.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.245-248
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• 1998

Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.67-71
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• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

• Particle and aerosol research
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• v.5 no.4
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• pp.153-158
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• 2009

Tungsten carbide powder was fabricated with carbothermal reaction by pulsed electric current flowing in compact of tunsten oxide and carbon. The mixed powder of tunsten oxide and carbon was ball-milled into ultrafine powders. The mixed powder of tungsten oxide and carbon was put into carbon mold and heat-treated at $1050{\sim}1200^{\circ}C$ by pulsed electric current flowing. The formation of tungsten carbide powder could be achieved by heat treatment at $1200^{\circ}C$ for 10 minitues.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.3
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• pp.170-176
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• 2000

A novel method for improving the adhesion of diamond films on cemented carbide tool inserts has been investigated. This method is based on the formation of a compositionally graded interface by developing a microrough surface structure using a pulsed laser process. Residual stresses of diamond films deposited on laser modified cemented carbides were measured as a function of substrate roughness using micro-Raman spectroscopy. The surface morphology and roughness of diamond films and cemented carbides were also investigated at different laser modification conditions. It was found that the increasing interface roughness reduced the average residual stress of diamond films, resulting in improved adhesion of diamond films on cemented carbides.