• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.169-177
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• 2012

A non-decimation second-order spatial moving average (SMA) discrete-time (DT) filter is proposed with reconfigurable null frequencies. The filter coefficients are changeable, and it can be controlled by switching sampling capacitors. So, interferers can be rejected effectively by flexible nulls. Since it operates without decimation, it does not change the sample rate and aliasing problem can be avoided. The filter is designed with variable weight of coefficients as $1:{\alpha}:1$ where ${\alpha}$ varies from 1 to 2. This corresponds to the change of null frequencies within the range of fs/3~fs/2 and fs/2~2fs/3. The proposed filter is implemented in the TSMC 0.18-${\mu}m$ CMOS process. Simulation shows that null frequencies are changeable in the range of 0.38~0.49fs and 0.51~0.62fs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.837-843
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• 2008

This paper proposes a power divider based on meta-material structure with dual-band operation. The meta-material structures of left-hand characteristic are constituted of series capacitors and shunt inductors, but they have parasitic series inductance and shunt capacitance effects. There is represented the composite right/ left-handed transmission line (CRLH-TL) model. When the power divider is implemented by using the CRLH-TL, the power divider can operate dual band. To verify the power divider with dual band, we are implemented to operate dual-band that is 0.88 GHz and 1.67 GHz. The characteristics of divider have the return loss less than each 21.0 dB and 15.8 dB and the insertion loss better than 3.83 dB and 3.64 dB at each frequency. Also, the output phase difference is $3{\sim}6^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.157-160
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• 2004

Ferroelectric $(Ba_xSr_{1-x})TiO_3$ (BST) thin films have been deposited on (001) MgO single crystals by a pulsed laser deposition (PLD) method. The structure of deposited BST thin films were investigated by an x-ray diffractometer. Calculated c-axis lattice parameters of the BST films exhibit a strong lattice distortion, which was not observed in ceramic BST at room temperature. This lattice distortion of BST has been attributed to strains caused by lattice constant difference between film and substrate, oxygen vacancies in BST film, and thermal expansion difference between film and substrate. Ferroelectric properties at 10 GHz have been measured using a HP 8510C vector network analyzer. Dielectric properties, capacitance tunability and quality factor, of the interdigitaed capacitors fabricated on BST films were calculated from the measured s-parameters. Two distinct behaviors in structural, opitical, and microwave properties of BST films were observed; below and above 200 mTorr of oxygen pressure in the deposition chmber.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.48.2-48.2
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• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.495-501
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• 2020

The various sintered samples comprising of 72 wt% (Al₂O₃) : 28 wt% (SiO₂) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al₂O₅Si and Al_5.33Si_0.67O_9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.329-334
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• 2001

Microstructures of barrier-type oxide layers on aluminum was studied by XRD, TEM and RBS. Fer formation of oxide layer. aluminum was anodized in a boric acid solution. The thickness of the oxide film subjected to applied voltage increased linearly at ratio of 1.54nm/V. For oxide layer anodized at 300V, amorphous structure of oxide layer was not transformed after heat treatment at 50$0^{\circ}C$ , while for oxide layers anodized at higher voltages the amorphous structure crystallized into a ${\gamma}$-alumina without any heat treatment. It was also found that the amorphous structure of oxide layer formed at 100V transformed into crystalline structure by electron irradiation. The structure was identified as ${\gamma}$-alumina.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.848-851
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• 2012

In this paper, circuit of reducing the offset voltage in Op-amp, effectively, is newly proposed by using dual capacitor. Capacitors and MOS switches are added in proposed circuit to make up for the weak points of previous circuits ofr reducing the offset voltage in auto-zeroing method. Also, it is designed to reduce the offset voltage in high frequency range by using chopping method, effectively. Circuit simulation and layout are executed by TSMC 1.8V, 0.18um process. From the simulation results, it is verified that magnitude of offset voltage is under 5mV and proposed circuit is good for compensation of offset voltage better than previous auto-zeroing method.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.4
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• pp.386-393
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• 2000

This paper presents an improved ZVS partial series resonant DC/DC converter (PSRC) with low conduction losses, suitable for high power and high frequency applications. The proposed PSRC have advantages of zero-voltage-switching (ZVS) of main switches for entire load ranges low conduction losses of main switches by decreasing current stresses. Also the reduction of the effective duty cycle is not occurred during the resonant period of the main circuit because the auxiliary circuit of the proposed converter is placed out of the main power path. The auxiliary circuit is composed with passive components, which are an inductor, two capacitors, two diodes, and a saturable inductor. An improved ZVS PSRC has so much characteristics with respect to the overall system efficiency and to the reduction of current stresses. The operation principles of the proposed converter are explained in detail and the various simulated and experimental results show the validity of the proposed converter.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.4
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• pp.318-326
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• 2000

This paper analyses with the dynamic performance of HVDC System connected to a weak AC system for varying exciter characteristics of synchronous machines connected at the converter bus. Conventionally capacitors are used to supply reactive power requirement at a strong converter bus. However the installation and synchronous machine is essential in a isolated weak network to re-start after a shutdown of HVDC and to increase strength. The dynamic performance of a synchronous machine depends on the characteristics depends on its exciter characteristics. In this paper, several excites types are used to investigate their effect on the dynamic performance of the HVDC system and modifications to standard exciter topogical are suggested to mitigate observed problems.