• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.9
• /
• pp.1436-1441
• /
• 1990

Prototype Switched Capacitor 4th order Low pass and Band Pass Filters were Realized and tested. Their capacitor values were determined by using automatic SCF design tool. Each filter was designed to operate in voiceband frequency, and practical solutions to improve its frequency characteristics were given. Experimental results show the validity of automatic SCF design program. Simulation and experimental results were fully compared and optimum design conditions were summarized.

• Journal of Power Electronics
• /
• v.7 no.4
• /
• pp.328-335
• /
• 2007

A conventional Single-Stage Power-Factor-Correction (PFC) AC/DC converter has a link capacitor voltage problem under high line input and low load conditions. In this paper, this problem is analyzed by using the voltage conversion ratio of the DC/DC conversion cell. By applying this analysis, a new Single-Stage PFC AC/DC converter with a boost PFC cell integrated with a Voltage-Doubler Rectified Asymmetrical Half-Bridge (VDRAHB) is proposed. The proposed converter features good power factor correction, low current harmonic distortions, tight output regulations and low voltage of the link capacitor. An 85W prototype was implemented to show that it meets harmonic requirements and standards satisfactorily with near unity power factor and high efficiency over universal input.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1597-1599
• /
• 2001

In this paper, two types of surge voltage generated in the only operation of capacitor bank composed of paralleled multi-modules are analyzed and also studied to suppress those. The surge voltage can give malfuction to the operation of capacitor bank and destroy the expensive components at the worst. The conditions and causes of surge voltage generation and the countermeasure for suppression are presented.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.18 no.4
• /
• pp.826-834
• /
• 1994

The purpose of this study is to identify torque characteristics in capacitor type electric motors and to illustrate the effects of several design parameters on the fluctuating components of the motor torque. To do this, two revolving field theory and stationary reference frame theory were applied to derive governing equations for the torque generated by motor. For simulation studies, parameters of the motor components were measured under the conditions of no loading and locking. Based on these, effects of several design variables on the torque characteristics were analyzed and compared with the actual measurements, which were estimated indirectly by measuring the stator voltage and current. Then, some illustrative improvements in design are suggested by taking Taguchi method.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.3
• /
• pp.90-94
• /
• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• Journal of the Korean Society of Safety
• /
• v.29 no.3
• /
• pp.20-27
• /
• 2014

Cooling equipment is the frequent occurrence of fire despite the absence of the heating element. National fire statistics in 2013 show that a total of 263 fires occurred in the cooling equipment and the number of electric fan has 145 fire cases. This is accounted for 55.1% of the whole. Electric fan is the electrical appliance that the heat is generated on the winding wire and the iron core. If such characteristic is not controled properly, fire would break out at the electric fan. also there is a gap filled with an insulator between connection terminals of the capacitor in the electric fan. But in case that the gap on the capacitor is covered with some conductive material such as dust, there would be a fire as well caused by electrical heating locally. Although many studies related with those have been conducted, electric fan fire is continuously occurred. In this study, thermal characteristics and current signal in various conditions such as the heat generation of windings including iron cores of the motor and the dielectric breakdown of terminals on the capacitor connected to the motor were detected. In order to measure the maximum temperature, "third level" wind velocity button was pushed and the time selection switch to "continuation" was set. Analyzed data would be available for the fire safety of the electric fan.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.05a
• /
• pp.90-90
• /
• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.161-161
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.41-41
• /
• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.12
• /
• pp.1001-1007
• /
• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]