• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.278-284
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• 2017

In this work, Ta-substituted $Li_7La_3Zr_{2-x}O_{12}$ (LLZTO) powder and pellets with garnet cubic structure were fabricated and characterized by modified and optimized sol-gel synthesis. Ta-substituted LLZO powder with the smallest grain size and pure cubic structure with little pyrochlore phase was obtained by synthesis method in which Li and La sources in propanol solvent were mixed together with Zr and Ta sources in 2-methoxy ethanol. The LLZTO pellets made with the prepared powder showed cubic garnet structure for all conditions when the amount of Li addition was varied from 6.2 to 7.4 mol. All the X-ray peaks of the pyrochlore phase disappeared when the Li addition was increased above 7.0 mol. When the final sintering temperature was varied, the LLZTO pellet had a pyrochlore-mixed cubic phase above $1000^{\circ}C$. However, the surface morphology became much denser when the final sintering temperature was increased. The sol-gel-driven LLZTO pellet with a sintering temperature of $1100^{\circ}C$ showed a lithium ionic conductivity of 0.21 mS/cm when Au was adopted as electrode material for the blocking capacitor. The results of this study suggest that modified sol-gel synthesis is the optimum method to obtain cubic phase of LLZTO powder for highly dense and conductive solid electrolyte ceramics.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.562-565
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• 2013

The high purity Al foil, which has an enlarged surface area by electrochemical etching process, has been used as an anode for an aluminum electrolytic capacitor. Etch pits are randomly distributed on the surface because of the existence of surface irregularities such as impurity and random nucleation of pits. Even though a large surface area was formed on the tunnel-etched Al, its applications to various fields were limited due to non-uniform tunnel morphologies. In this work, the selective electrochemical etching of aluminum was carried out by using a patterned mask fabricated by photolithographic method. The formation of etch pits with uniform distribution has been demonstrated by the optimization of experimental conditions such as current density and etching solution temperature.

• Journal of Electrical Engineering and Technology
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• v.5 no.3
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• pp.353-362
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• 2010

This paper presents a centralized control algorithm for power system performance in the Korean power system using Flexible AC Transmission Systems (FACTS) devices. The algorithm is applied to the Korean power system throughout the metropolitan area in order to alleviate inherent stability problems, especially concerns with voltage stability. Generally, control strategies are divided into local and centralized control. This paper is concerned with a centralized control strategy in terms of the global system. In this research, input data of the proposed algorithm and network data are obtained from the SCADA/EMS system. Using the full system model, the centralized controller monitors the system condition and decides the operating point according to the control objectives that are, in turn, dependent on system conditions. To overcome voltage collapse problems, load-shedding is currently applied in the Korean power system. In this study, the application of the coordination between FACTS and switch capacitor (SC) can restore the solvability without load shedding or guarantee the FV margin when the margin is insufficient. Optimal Power Flow (OPF) algorithm, for which the objective function is loss minimization, is used in a stable case. The results illustrate examples of the proposed algorithm using SCADA/EMS data of the Korean power system in 2007.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.4
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• pp.333-342
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• 2009

Three-level Diode Clamped Multilevel Inverter, generally known as Neutral-Point-Clamped (NPC) Inverter, has an inherent problem causing Neutral Point (NP) potential variation. Until now, in many literatures NP potential problem has been investigated and lots of solutions have also been proposed. However, under fault and fault tolerant control, distinctive feature for NP potential variation problem was rarely published from the standpoint of reliability. In this paper, NP potential is analytically investigated both normal and faulty conditions under carrier based PWM. Subsequently, relation between fault detection time and size of capacitor is analyzed. This information is explored by simulation and experiment results, which contribute to enhance the reliability of inverter system.

• Journal of Power Electronics
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• v.13 no.4
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• pp.626-635
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• 2013

An analysis of the junction capacitance in resonant rectifiers which has a significant impact on the operating point of resonance circuits is studied in this paper, where the junction capacitance of the rectifier diode is to decrease the resonant current and output voltage in the circuit when compared with that in an ideal rectifier diode. This can be represented by a simplified series resonant equivalent circuit and a voltage transfer function versus the normalized operating frequency at varied values of the resonant capacitor. A low voltage to high voltage push-pull DC/DC resonant converter was used as a design example. The design procedure is based on the principle of the half bridge class-DE resonant rectifier, which ensures more accurate results. The proposed scheme provides a more systematic and feasible solution than the conventional resonant push-pull DC/DC converter analysis methodology. To increase circuit efficiency, the main switches and the rectifier diodes can be operated under the zero-voltage and zero-current switching conditions, respectively. In order to achieve this objective, the parameters of the DC/DC converter need to be designed properly. The details of the analysis and design of this DC/DC converter's components are described. A prototype was constructed with a 62-88 kHz variable switching frequency, a 12 $V_{DC}$ input voltage, a 380 $V_{DC}$ output voltage, and a rated output power of 150 W. The validity of this approach was confirmed by simulation and experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.117-117
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• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.1
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• pp.35-44
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• 1998

In this paper, input LC filter design of diode rectifiers considering filter V A rating reduction has been propoesd. It consisted of an input LC parallel resonent tank whose inductor and capacitor values are se$.$ lected so that the input filter presents an infinite impedance to harmonic input ac current component. The operation of proposed input filter has been analyzed in detail under steady state conditions. Performance evaluation and related design data have been provided on Per Unit basis for the proper implementation of diode rectification system. Finally, Detailed input and output current analysis has shown that the proposed input filter yield high quality input ac current waveforms, in particular, high input power factor values and more reliabilty which reducing the V A rating of passive components as compared to the standard type LC filter.filter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.865-868
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3 (PLT(28))$ thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the Pt/Ti/SiO$_2$/Si substrate and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}$A/cm$^2$, respectively

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.