• 제목/요약/키워드: Capacitor conditions

검색결과 234건 처리시간 0.028초

HVC-고주파변압기 내장형 펄스전원장치를 이용한 Microwave Oven의 효율 향상 (Efficiency Improvement of Microwave Oven Using a Pulse Power Supply Embedded HVC-High Frequency Transformer)

  • 정병환;조준석;강병희;목형수;최규하
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제53권3호
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    • pp.180-187
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    • 2004
  • A conventional power supply of a microwave oven has a 60Hz transformer and high voltage capacitor(HVC). Though it is very simple and has low cost, it has several problems such as large size, heavy weight and low efficiency To improve these problems, various high frequency inverter type power supply have been investigated and developed in recent years. But these cost is higher than the conventional one due to additional control circuit, fast switching devces. In this paper, a novel pulse power supply for microwave oven using high frequency transformer embedded HVC(High Voltage Capacitor) is proposed for down-sizing, cost reduction and efficient improvement. To verify the effectiveness of the proposed transformer, an equivalent circuit of transformer embedded HVC is derived and it's characteristic is described. And the validity of the proposed pulse power supply embedded HVC-high frequency transformer is shown by simulations and experiments accroding to various operating conditions.

전도손실 저감 및 효율 상승을 위한 PWM DC-DC 컨버터의 특성 (Character of PWM DC-DC Converter for Conduction Loss Reduction and Efficiency Rise)

  • 김영문;김해재;김칠용;류재엽;김수욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 학술대회 논문집 전문대학교육위원
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    • pp.125-127
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    • 2007
  • Presented increase and so on of switch stress and switching dissipation and EMI that is happened in general PWM converter and in this study to solve problem the resonance energy return to life rate and new active snubber PWM converter because do maximization. Active snubber PWM converter that try adds auxiliary switch and resonance capacitor, diode to existing converter under all switching conditions turn on/off Minimised switching dissipation that occur. Reduced harmonic components absorbing station recovery electric current that happen to snubber diode inserting diode and resistance. And decreased peak current that is happened in auxiliary switch arranging resonance capacitor and inductor properly, Certified effect that efficiency rises about 2.5[%] more than existent PWM converter in rated load through an experiment.

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전력계통 안정도 향상을 위한 TCSC 안정화 장치의 GA-퍼지 전 보상기 설계 (Design of GA-Fuzzy Precompensator of TCSC-PSS for Enhancement of Power System Stability)

  • 왕용필;정문규;정형환
    • 대한전기학회논문지:전력기술부문A
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    • 제54권2호
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    • pp.51-60
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    • 2005
  • In this paper, we design the GA-fuzzy precompensator of a Power System Stabilizer for Thyristor Controlled Series Capacitor(TCSC-PSS) for enhancement of power system stability. Here a fuzzy precompensator is designed as a fuzzy logic-based precompensation approach for TCSC-PSS. This scheme is easily implemented by adding a fuzzy precompensator to an existing TCSC-PSS. And we optimize the fuzzy precompensator with a genetic algorithm for complements the demerit such as the difficulty of the component selection of fuzzy controller, namely, scaling factor, membership function and control rules. Nonlinear simulation results show that the proposed control technique is superior to conventional TCSC-PSS in dynamic responses over the wide range of operating conditions and in convinced robust and reliable in view of structure.

양전원전압병용단상전동기의 권선설계의 조정에 관한 고찰 (Analysis on Arrangements of Winding Design of Single-Phase Capacitor Motor Used to Two Voltages)

  • 황영문;이일천
    • 전기의세계
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    • 제28권3호
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    • pp.65-71
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    • 1979
  • This paper examines the reasonable winding arrangements of designing tapped winding capacitor motors to used in two voltage sources. The approach of this paper is based partly on a hybrid equivalent circuit of a single phase induction motor, together with an experimental method by sample machines. In results, the distribution of etra and main windings ia the stator is to be balanced in each magnetic pole and in order to have the same torque output characteristics for two different voltage sources, the extra/main winding ratio is to be adjusted. Experimental results obtaired with sample macines of about 1/8 hp output rating are used with analysis to predict the favorable winding conditions.

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온도특성을 고려한 착자회로 및 요크의 특성 해석 (Characteristics Analysis of Magnetizing Circuit and Fixture considering Temperature Characteristic)

  • 백수현;맹인재;김필수;김철진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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    • pp.82-84
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    • 1993
  • A method for simulating general characteristics and temperature characteristics of magnetizing fixture coil of the capacitor discharge impulse magnetizer-magnetizing fixture system using SPICE is presented. This method has been developed which can aid the design, understanding and inexpensive, time-saving of magnetizing circuit. As the detailed characteristics of magnetizing circuit can be obtained, the efficient design of the magnetizing circuit which produce desired magnet will be possible using our SPICE modeling. Especially, The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits tinder different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The temperature estimation method uses multi-lumped model with equivalent thermal resistance and thermal capacitance.

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부하의 변화를 고려한 연료전지 스택 동특성 모델링 (Fuel Cell Stack Dynamics Modeling Considering Load Variation)

  • 고정민;김종수;최규영;강현수;이병국
    • 전기학회논문지
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    • 제58권1호
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    • pp.93-99
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    • 2009
  • In this paper, transient voltage response of Polmer Electrolyte Membrane Fuel Cell (PEMFC) stack is analyzed and voltage dynamic characteristic is modeled for optimal design of power conditioning system (PCS). According that the load is changed, the corresponding operating voltage of fuel cell stack is also varied with a certain deep and rising time due to the chemical and mechanical responses. This transient behavior can affect on the operation with respect of PI gain in controller, duty ratio, capacitor of capacitor and so on. So in this paper the detailed theoretical analysis of transient voltage dynamics is explained and the methodology of dynamic modeling is introduced. In addition, the validity and feasibility of the proposed dynamic model is verified by experimental results under various load conditions.

QUASI-RESONANT ZVS-PWM DC-DC FORWARD CONVERTER WITH ACTIVE CLAMPED CAPACITOR FOR SOLAR PHOTOVOLTAIC ENERGY-DRIVEN BOAT SYSTEM

  • Kenya, Sakamoto;Masakazu, Kanaoka;Hidekazu, Muraoka;Ryuhei, Hojyo;Mutsuo, Nakaoka
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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    • pp.68-73
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    • 1998
  • This paper presents a novel prototype of active voltage clamped quasi-resonant ZVS-PWM forward DC-DC converter designed for specific low voltage high current application. We establish the soft-switching forward converter with a high frequency isolated link which can efficient operate over wide load ranges under conditions of zero voltage soft-switching and active voltage clamped switching. In addition, we evaluate connection of the soft-switching forward converter with large capacitor which capacitance is over 100[F].

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전해조건이 고순도 알루미늄 박 콘덴서의 터널에칭과 정전용량에 미치는 영향 (The Influence of Electrolytic Condition on Tunnel Etching and Capacitance Gain of High purity Aluminium Foil on capacitor)

  • 이재운;이병우;김용현;이광학;김흥식
    • 한국표면공학회지
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    • 제30권1호
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    • pp.44-56
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    • 1997
  • Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

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2차측 보조 회로를 이용한 ZVZCS Three Level DC/DC 컨버터에 관한 연구 (A Study on the Zero-Voltage and Zero-Current-Switching Three Level DC/DC Converter using Secondary Auxiliary Circuit)

  • 배진용;김용;권순도;김필수;이은영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.320-323
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    • 2001
  • A ZVZCS(Zero-Voltage and Zero-Current-Switching) Three Level DC/DC Converter is presented to secondary auxiliary circuit. The converter presented in this paper used a phase shift control with a flying capacitor in the primary side to achieve ZVS for the outer switch. A secondary auxiliary circuit, which consists of one small capacitor and two small diode, is added in the secondary to provides ZVZCS conditions to primary switches, and aids to clamp secondary rectifier voltage. The auxiliary circuit Includes neither lossy component nor addition active switch, which makes the proposed converter efficient and effective. The principle of operation, feature, and design considerations are illustrated and verified through the experiment with a 500W 50kHz prototype converter.

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Antenna structure를 이용한 MIS(TaN/$HfO_2$/Si) capacitor의 plasma damage 연구 (Plasma damage of MIS(TaN/$HfO_2$/Si) capacitor using antenna structure)

  • 양승국;이승용;유한석;김한형;송호영;이종근;박세근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.551-552
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    • 2006
  • Plasma-induced charging damage was been measured during TaN gate electrode of MISFET(TaN/$HfO_2$/Si) or interconnection metal etching step using large antenna structures. The results of these experiments were obtained that $HfO_2$ gate dielectric layer was affected about plasma charging effects and damage increased with F-N tunneling. Therefore, the etching conditions should be optimized to avoid the defects caused by plasma charging.

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