• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.329-333
• /
• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.4
• /
• pp.516-520
• /
• 2009

Atmosphere Plasmas of Gas Discharge (APGD) have been used in plasma sources for material processing such as etching, deposition, surface modification, etc. This study is to investigate and understand the fundamental plasma discharge properties. Especially, $SF_6/N_2$ mixed gas would be used in power transformer, GIS (Gas insulated switchgear) and so on. In this paper, we developed a one dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). 38 kinds of $SF_6/N_2$ plasma particles which are an electron, two positive ions (${SF_5}^+$, ${N_2}^+$), five negative ions (${SF_6}^-$, ${SF_5}^-$, ${SF_4}^-$, ${F_2}^-$, ${F_1}^-$), thirty excitation and vibrational particles for $N_2$ were considered in this computation. The $N_2$ gases of 20%, 50%, 80% were mixed in $SF_6$ gas. As the amount of $N_2$ gas was increased, the properties of electro-negative plasma moved toward the electro-positive plasma.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.1
• /
• pp.19-26
• /
• 2006

The ccrf-discharge has in comparison with the hollow-cathode discharge and DC-discharge some advantages: Simple design of the tube and homogeneous plasma. The ccrf-discharge was researched with the goal, to use on the excitation of the gas laser. In this work a rf-exciting system was planned and developed. With it a homogeneous discharge was produced in the cw operation. To supply the rf-power with the frequency 13.56[MHz] effectively in the discharge, laser tube were used with inner diameter of 5[mm] and the specially developed rf-electrodes. A matching circuit was composed also. Thereby the impedance of the discharge tube was adjusted to the 50[$\Omega$] output resistance of the rf-source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.183-187
• /
• 1997

The Thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56 [MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was fecund that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.2 no.4
• /
• pp.199-202
• /
• 2007

In this paper, we examined the operating principle of a passive tag antenna for RFID system in UHF band. Based on the study, we proposed a novel RFID tag antenna which adopts the inductively coupled feeding structure to match antenna impedance to a capacitively loaded commercial tag chip. The proposed tag antenna consists of microstrip lines on a thin PET substrate for low-cost fabrication. The detail structure of the tag antenna were optimized using a full electromagnetic wave simulator of IE3D in conjunction with a Pareto genetic algorithm, and the size of the tag antenna can be reduced up to kr=0.27(2 cm2). We built some sample antennas and measured the antenna characteristics such as a return loss, an efficiency, and radiation patterns. The readable range of the tag antenna with a commercial RFID system showed about 1 to 3 m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.857-860
• /
• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.969-972
• /
• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.

• 제어로봇시스템학회:학술대회논문집
• /
• 1986.10a
• /
• pp.596-600
• /
• 1986

This paper describes a capacitively reading apparatus for determining the angular orientation, speed and/or direction of rotary objects such as shaft, dial hand, counter wheel and the like. The apparatus consists of sensing device and circuit accompanying with said sensing device. The sensing device is provided by arranging many stationary electrodes lying substantially on a surface of a stationary plane member and by arranging rotary electrode lying substantially on a surface of rotary objects to be monitored, in which said rotary electrode is in confronting relationship to some stationary electrodes so as to construct unique capacitors according to the angular position of rotary objects. The angular position of said rotary electrode is determined by sets of stationary electrodes which are in confronting relationship to rotary electrode. A carrier signal is generated by scanning device while scanning said stationarelectrodes, whose periods are in corresponding relationship to said stationary electrodes, respectively. The periods of carrier corresponding to the angular position of said rotary electrode is modulated by a modulation signal generated by detecting device according to said rotary electrode. This apparatus is applied to automatically monitor any kind of storage tank, as well as to automatically read the conventional utility meters such as Watthour meters, Gas meters, Water meters, etc..

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1262-1263
• /
• 2008

Recently film-typed dye sensitized solar cell(DSC) attracts much attention with increasing applications for its flexibility and transparency. The ZnO:Al thin film, which serves mainly as transparent conducting electrode, Aluminium-doped zinc oxide(ZnO:Al) thin film has emerged as one of the most promising transparent conducting films since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r. f. magnetron sputtering method. The effects of gas pressure and r. f. discharge power on the morphological, electrical and optical properties of ZnO:Al thin film were studied. Especially the variation in substrate thickness after sputtering and surface morphology of the substrate were investigated and clarified. The results showed that the film deposited on the PET substrate at r. f. discharge power of 180 W showed the minimum resistivity of about $1.5{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 93%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.143-146
• /
• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.