• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.4
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• pp.556-562
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• 2012

Micro electrical discharge machining (${\mu}EDM$) has been used for non-conventional material removal. One drawback of ${\mu}EDM$ is low productivity. In this study, we tried to find the optimal machining conditions to manufacture the micro hole with an optimal machining time without loss of accuracy. Taguchi method was used to figure out the relation between machining parameters and characteristics of the process. It was found that the electrode wear, the entrance and exit clearance gave a significant effect on the diameter of the micro hole when the diameter of the electrode was identical. Grey relational analysis was used to determine the optimal machining condition for minimum machining time without loss of accuracy. The obtained optimal machining condition was the input voltage of 80V, the capacitance of 680pF, the resistance of $500{\Omega}$, the feed rate of $1.5{\mu}m$/s and the spindle speed of 2900rpm. The machining time was reduced to 48% without loss of accuracy under the optimal machining condition.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.6
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• pp.155-166
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• 2016

It is important to configure capacitance(C) of the capacitor and the induction coefficient(L) of the work coil on the resonant circuit design stage in order to induce heating on the object by a precise and constant frequency components in the electromagnetic induction heating equipment. Work coil conducts a direct induction heating according to heating point and area of the object which has a fixed heat factor so that work coil is designed to has fixed value. On the other hands, Capacitor should be designed to be changed in order to be the higher the utilization of the entire equipment. It is extracted the samples by variation of single electrode capacity from the selection stage of raw materials for capacity to the stage of process design for output of the high frequency LC resonance of 700kHz on 1000 VAC maximum voltage and current to $200I_{MAX}$. It is suggested fundamental experiment results in order to prove relation for the optimal design of HF-LC resonance conduction-cooled capacitor based on the response of frequency characteristics and results of output parameters according to variation of the capacitance size.