• Title/Summary/Keyword: Capacitance of Thin Films

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Study on the ultra thin film of silicon oxyinitride deposited by plasma - assisted $N_2O$ oxidation in ICP-CVD reactor (ICP-CVD 반응기 내에서 $N_2O$ 플라즈마 산화법을 이용하여 증착된 ultra thin silicon oxynitride films 에 관한 연구)

  • Hwang, Sung-Hyun;Jung, Sung-Wook;Yi, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.161-162
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    • 2006
  • Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.

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Improvement of Electrical Properties by Controlling Nickel Plating Temperatures for All Solid Alumina Capacitors

  • Jeong, Myung-Sun;Ju, Byeong-Kwon;Oh, Young-Jei;Lee, Jeon-Kook
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.25.2-25.2
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    • 2011
  • Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

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Effects of Top Electrode Thickness on Ferroelectric Properties of Preferentially Oriented $Pb(Zr, Ti)O_3$Thin Films (상부전극 두께가 우선방위를 갖는 $Pb(Zr, Ti)O_3$ 박막의 강유전체 특성에 미치는 영향)

  • 고가연;이은구;이종국;박진성;김선재
    • Journal of the Korean Ceramic Society
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    • v.36 no.10
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    • pp.1035-1039
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    • 1999
  • Ferroelectric properties and reliability characteristics of(111) and (100) preferentially oriented tetragonal Pb(Zr0.2Ti0.8)O3 (PZT) thin film capacitors have been investigated as a function of the top electrode thickness. The (111) preferentially oriented film exhibits 180$^{\circ}$domain switching process with better squareness of hysterisis loop and abrupt change of small singal capacitance-voltage comparing to the (100) preferentially oriented film having 90$^{\circ}$ domain switching process. The domain swithcing process of tetragonal phase PZT is different from that of rhobohedral phase. The film with thinner top electrode shows less initial switching polarization due to less compressive stress but it exhibits better endurance characteristics due to enhancing partial switching region.

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Microcurrent Effect with Inverse Proportional Characteristics between the Concentration and Degree of Movement of the Carrier (케리어의 농도와 이동도 사이의 반비례 특성을 갖는 미소전류 효과)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.1
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    • pp.70-73
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    • 2019
  • It was confirmed that current flowing in thin films below nm increases conductivity in diffusion currents by holes rather than electric currents by electrons. ZTO thin film, which was heat treated at $150^{\circ}C$, increased electron concentration, and thus increased capacitances. However, it was found that low current movement would be difficult as the degree of movement was reduced. Therefore, it was found that diffusion currents were more advantageous than drift currents by electrons in order to allow low current to be produced in very thin films of nm class.

Electrical Properties of Pt/$LiNbO_3$/AIN/Si(100) structures (Pt/$LiNbO_3$/AIN/Si(100) 구조의 전기적 특성)

  • 정순원;정상현;인용일;김광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.58-61
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    • 2001
  • Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

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A study on the I-V Properties of Long Chain Fatty Acid of LB Thin Films (장쇄지방산 LB박막의 전류-전압 특성에 관한 연구)

  • Chon, Dong-Kyu;Chang, Hun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.913-919
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    • 2000
  • We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V]. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films (급속 후 열처리 및 실리콘기판 배향에 따른 MOCVD-TiO2박막의 구조적.전기적 특성)

  • 왕채현;최두진
    • Journal of the Korean Ceramic Society
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    • v.35 no.1
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    • pp.88-96
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    • 1998
  • The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

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Fabrication and Dielectric Properties of $(Sr_{1-x}Ca_x)TiO_3$ thin film by RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링법에 의한 $(Sr_{1-x}Ca_x)TiO_3$ 박막의 제조 및 유전특성)

  • Kim, J.S.;Paek, B.H.;Jang, W.S.;Kim, C.H.;Choi, W.S.;Yoo, Y.K.;Kim, Y.J.;Lee, J.U.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1456-1458
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    • 1998
  • The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

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The Contact Characteristics of Ferroelectrics Thin Film and a-Si:H Thin Film (강유전성 박막의 형성 및 수소화 된 비정질실리콘과의 접합 특성)

  • 허창우
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.501-504
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    • 2003
  • In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

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Thermal and Humidity Sensing Properties of Heat Resistant Polyimide Thin Film Manufactured by Dry Process (건식법에 의해 제조된 내열성 폴리이미드박막의 열적특성 및 습도감지특성)

  • Lim, Kyung-Bum;Kim, Ki-Hwan;Hwang, Sun-Yang;Kim, Jong-Yoon;Hwang, Myung-Hwan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.6
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    • pp.1080-1086
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    • 2007
  • The aim of this paper is to establish the optimum fabrication condition of specimens, using the Vapor Deposition Polymerization Method(VDPM), which is one of modesto prepare functional organic thin films using a dry process, and to develop a thin film type humidity sensor which has good humidity sensitive characteristics. The inner part of the film became denser and roughness of the film surface eased as curing temperature increased so that thickness of the film could be made uniform. This also shows the appropriate curing temperature was $250^{\circ}C$. The basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Aluminum/Polyimide/Aluminum. The result of SEM and AFM measurement shows that the thickness of PI thin films decreased and the refraction increased as curing temperature increased, which indicates that a capacitance-type humidity sensor utilizing polyimide thin film is fabricated on a glass substrate. The characteristics of fabricated samples were measured under various conditions, and the samples had linear characteristics in the range of 20-80 %RH, independent of temperature change, and low hysteresis characteristic.