• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.2
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• pp.147-152
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• 2015

We designed, fabricated, and tested the capacitive microsensors for skin piloerection monitoring. The performance of the skin piloerection monitoring sensor was characterized using the artificial bump, representing human skin goosebump; thus, resulting in the sensitivity of $-0.00252%/{\mu}m$ and the nonlinearity of 25.9 % for the artificial goosebump deformation in the range of $0{\sim}326{\mu}m$. We also verified two successive human skin piloerection having 3.5 s duration on the subject's dorsal forearms, thus resulting in the capacitance change of -6.2 fF and -9.2 fF compared to the initial condition, corresponding to the piloerection intensity of $145{\mu}m$ and $194{\mu}m$, respectively. It was demonstrated experimentally that the proposed sensor is capable to measure the human skin piloerection objectively and quantitatively, thereby suggesting the quantitative evaluation method of the qualitative human emotional state for cognitive human-machine interfaces applications.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1613-1616
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• 2012

Ni nanoparticles-$TiO_2$ nanotube arrays (Ni/$TiO_2NTs$) composites were prepared by pulsed electrodeposition method and subsequently characterized by means of field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX). The FESEM results showed that highly dispersed Ni nanoparticles were not only loaded on the top of the $TiO_2NTs$ but also within the tubular structure, and the particle size of Ni prepared at different current amplitude (100, 200 and 300 $mA{\cdot}cm^{-2}$) was in the range of 15 to 70 nm. The electrochemical studies indicated that Ni nanoparticles loaded on the highly ordered $TiO_2NTs$ are readily accessible for electrochemical reactions, which improve the efficiency of the Ni nanoparticles and $TiO_2NTs$. A maximum specific capacitance (27.3 $mF.cm^{-2}$) was obtained on the Ni/$TiO_2NTs$ composite electrode that prepared at a current of 200 $mA.cm^{-2}$, and the electrode also exhibited excellent electrochemical stability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.882-887
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• 2013

We investigated a SiC-based hydrogen gas sensor with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications. The sensor was fabricated by Pd/$Ta_2O_5$/SiC structure, and a thin tantalum oxide ($Ta_2O_5$) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature as well as high permeability for hydrogen gas. In the experiment, dependence of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm was analyzed at room temperature to $500^{\circ}C$. As the result, our sensor exploiting a $Ta_2O_5$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1769-1776
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• 2016

For on-line partial discharge (PD) monitoring of rotating machines, a novel sensor is proposed, which can be installed on the power lead inside the terminal box of the machine. The sensor has been designed to have high capacitance, and minimal reflection of measured pulses. As a sensitivity of the sensor, transfer impedance $Z_t$ has been measured and compared to conventional coupler-type sensors. A simple method is presented for measuring $Z_t$ of coupler sensors, using a vector network analyzer and a practical lead-cable of rotating machine. Through this method, it became possible to measure the $Z_t$ of coupler sensors including the installation environment of them. The $Z_t$ of the proposed sensor is higher than that of same sized other conventional couplers at frequencies between 30 and 92 MHz. Another sensitivity test has been performed using a PD calibrator as a test pulse source. The proposed sensor has higher measured peak voltage than the conventional coupler type sensors when the same charges were input.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.1
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• pp.26-30
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• 2006

For the purpose of developing capacitive humidity sensor having interdigital electrodes, interdigital electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thickness. For the development of ASIC, switched capacitor signal processing circuits for capacitive humidity sensor were designed and simulated by Cadence using $0.25{\mu}m$ CMOS process parameters. The signal processing circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control. The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is $0.4%R.H./^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of $3%R.H.{\sim}98%R.H.$. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigital electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.17-24
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• 2005

We fabricated PIN-Photodiodes with a single mode fiber for analog communications and analyzed characteristics of the devices. The fabricated PIN-Photodiode shows a bandwidth of 1.5 GHz, a dark current of 20 p4 a capacitance of 0.48 pF, and the responsivity of 0.9 V/W, a second order distortion of -72 dBc. In this paper, we developed a new optical Packaging technology that is aligning in real-time monitoring of both responsivity and IM2 characteristics. As a result responsivity has been improved by 0.03 V/W, and also U has been improved by $3\~5\;dBc$. On the other hand, failure ratio has been reduced by $3.5\%$.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.983-989
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• 2015

Power transformer is one of the major and key apparatus in electric power system. Monitoring and diagnosis of transformer fault is necessary for improving the life period of transformer. The failures caused by short circuits are one of the causes of transformer outages. The short circuit currents induce excessive forces in the transformer windings which result in winding deformation affecting the mechanical and electrical characteristics of the winding. In the present work, a transformer producing only the radial flux under short circuit is considered. The corresponding axial displacement profile of the windings is computed using Finite Element Method based transient structural analysis and thus obtained displacements are compared with the experimental result. The change in inter disc capacitance and mutual inductance of the deformed windings due to different short circuit currents are computed using Finite Element Method based field analyses and the corresponding Sweep Frequency Responses are computed using the modified electrical equivalent circuit. From the change in the first resonant frequency, the winding movement can be quantified which will be useful for estimating the mechanical withstand capability of the winding for different short circuit currents in the design stage itself.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• Journal of the Optical Society of Korea
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• v.13 no.4
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• pp.434-438
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• 2009

In this paper, a 12.5-Gb/s optical transmitter is implemented using 0.13-${\mu}m$ CMOS technology. The optical transmitter that we constructed compensates temperature effects of VCSEL (Vertical cavity surface emitting laser) using auto-power control (APC) and auto-modulation control (AMC). An external monitoring photodiode (MPD) detects optical power and modulation. The proposed APC and AMC demonstrate 5$\sim$20-mA of bias-current control and 5$\sim$20-mA of modulation-current control, respectively. To enhance the bandwidth of the optical transmitter, an active feedback amplifier with negative capacitance compensation is exploited. The whole chip consumes only 140.4-mW of DC power at a single 1.8-V supply under the maximum modulation and bias currents, and occupies the area of 1280-${\mu}m$ by 330-${\mu}m$ excluding bonding pads.

• Korean Journal of Optics and Photonics
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• v.12 no.4
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• pp.300-304
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• 2001

We suggest a method to measure and correct bending deformation in piezoelectric ceramics displacement. The angle and direction of the bending deformation are measured by monitoring the position of a laser beam reflected on a mirror which is attached to the piezoelectric ceramics with the uncertainty of the angle measurement of $0.36\mu$rad. We divided the electrode of a piezoelectric ceramic into 3 parts and connected 3 capacitors to each electrode in order to apply different voltage to each electrode with one voltage supplier. The deformation was corrected by adjusting the capacitance of each capacitor and was reduced to 6.3%, comparing to the uncorrected case. By using this corrected piezoelectric ceramic to modulate the length of the ringdown cavity, the fluctuation of the decay time caused by the change in optic axis of the cavity was removed.emoved.