• 한국재료학회지
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• 제21권8호
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

• Bulletin of the Korean Chemical Society
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• 제23권11호
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• pp.1519-1523
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• 2002

A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

• 한국컴퓨터정보학회논문지
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• 제18권9호
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• pp.33-41
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• 2013

본 논문에서는 CdS(황화 카드뮴) 광센서란 소자를 태양광 모듈로 대체하여, 신재생에너지를 통한 충전도 하며 이 전력으로 동작하는 태양광 스위치를 제안하고 이의 효용성을 실험/검증하고자 한다. 우선 기존의 CdS 광센서와 이를 포함한 자동 점멸 스위치의 동작 원리를 조사해 본 후, 태양광 모듈의 특성을 조사함으로써 기존의 광센서를 태양광 모듈로 대체가능할 지를 분석해 본다. 그 가능성을 확인해 본 후, 태양광 스위치 회로를 설계 및 구현한 후, 이의 특성을 실험해 봄으로써 기존 스위치를 대체 가능함을 보이고 그 특성들을 비교/평가해 본다. 연구 결과 제안하는 태양광 스위치가 기존의 자동 점멸 스위치를 대체 가능함을 확인하였을 뿐만 아니라, 보다 많은 장점들을 가지고 있음을 확인하였다.

• 한국결정성장학회지
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• 제7권2호
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• pp.315-323
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• 1997

수직승화방법을 이용하여 시료의 용융점 미만의 온도에서 CdS 단결정을 성장하였다. 분말법을 이용한 X-ray 실험으로부터 구한 CdS 단결정의 격자상수 값은 $a_0=4.139\AA$, $c_0=6.719\AA$이었다. 성장된 CdS 단결정과 CuCl 용액을 사용하여 $Cu_2$S/CdS 태양전지를 제작한 후 2분 동안 공기중에서 $250^{\circ}C$로 열처리한 후 light-to-dark J-V cross over effect를 측정하였다. 측정된 Voc, Jsc, Vop와 fill factor값은 각각 0.40 volt, $4.2mA/\textrm{cm}^2$, 0.31 volt,$3.8mA/\textrm{cm}^2$, 0.68이었으며, 효율은 3.8 %를 나타내었다. 제작된 태양전지의 spectral response는 광발광 실험으로부터 498 nm (2.49eV)와 585 nm (2.12 eV)에서 그 peak가 나타남을 확인하였다.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.170-173
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• 2010

Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

• 상하수도학회지
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• 제13권2호
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• pp.47-54
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• 1999

SRB(Sulfate Reducing Bacteria) converts sulfate into sulfide using an organic carbon source as the electron donor. The sulfide formed precipitates the various metals present in the AMD (Acid Mine Drainage). This study is the fundamental research on heavy metal removal from AMD using SRB. Two completely mixed anaerobic reactors were operated for cultivation of SRB at the temperature of $30^{\circ}C$ and anaerobic batch reactors were used to evaluate the effects of carbon source, COD/sulfate($SO_4^=$) ratio and alkalinity on sulfate reduction rate and heavy metal removal efficiency. AMD used in this study was characterized by low pH 3.0 and 1000mg/l of sulfate and dissolved high concentration of heavy metals such as iron, cadmium, copper, zinc and lead. It was found that glucose was an organic carbon source better than acetate as the electron donor of SRB for sulfate reduction in AMD. Amount of sulfate reduction maximized at the COD(glucose)/sulfate ratio of 0.5 in the influent and then removal efficiencies of heavy metals were 97.5% of Cu, 100% of Pb, 100% of Cr, 49% of Mn, 98% of Zn, 100% Cd and 92.4% of Fe. Although sulfate reduction results in an increase in the alkalinity of the reactor, alkalinity of 1000mg/1 (as $CaCo_3$) should be should be added continuously to the anaerobic reactor in order to remove heavy metals from AMD.

• Current Photovoltaic Research
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• 제2권4호
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• pp.152-156
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• 2014

We report hybrid solar cells fabricated with polymer/fullerene bulk heterojunction layers that contain inorganic nanocrystals synthesized by in-situ reaction in the presence of polymer chains. The inorganic (cadmium sulfide) nanocrystal ($CdS_{NC}$) was generated by the reaction of cadmium acetate and sulfur by varying the reaction time up to 30 min. The synthesized $CdS_{NC}$ showed a rectangular flake shape, while the size of $CdS_{NC}$ reached ca. 150 nm when the reaction time was 10 min. The performance of hybrid solar cells with $CdS_{NC}$ synthesized for 10 min was better than that of a control device, whereas poor performances were measured for other hybrid solar cells with $CdS_{NC}$ synthesized for more than 10 min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.46-49
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• 1992

Cadmium sulfide thin films were deposited on glass substrate by Chemical Mist Deposition from solutions containing equimolar (0.1M) cadmium chloride and thiourea [(NH$_2$)$_2$CS] at a mist velocity of 1.6m/sec. Substrate temperatures were ranged between 200$^{\circ}C$ and 400$^{\circ}C$. The microstructure and semiconducting property of the films were investigated using SEM, X-ray diffraction, UV transmittance measurement and four point probe method. All the films have hexagonal structure and diffraction patterns indicate that the intensity of (112) and (101) reflections increase with increasing substrate temperature, whereas (002) reflection substrate temperature, whereas(002) reflection decrease for substrate temperatures between 250$^{\circ}C$ and 350$^{\circ}C$. The films prepared at lower temperature have a significant number of pinholes due probably to entrapped gaseous reaction. Optical transmittance of the films deposited at 350$^{\circ}C$ was about 75%. Optical bandgap of the films were 2.43eV regardless of substrate temperature. The dark resistivity of the films decreased with increasing substrate temperature up to 300$^{\circ}C$ and increased with further increasing substrate temperature. The films were photosensitive and had dark-to-light resistivity ratios of about 10 at room temperature for a white-light photoexcitation intensity of 50mw/$\textrm{cm}^2$.