• Title/Summary/Keyword: Cadmium Sulfide(CdS)

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Suggestion of Photovoltaic Switch and Evaluation of Its Usability (태양광 스위치 제안 및 효용성 평가)

  • Jang, Junho;Lee, Junho;Jeong, Juhwan;Jang, Minseok;Lee, Yonsik
    • Journal of the Korea Society of Computer and Information
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    • v.18 no.9
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    • pp.33-41
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    • 2013
  • In this paper, a photovoltaic switch is suggested that is operated by solar module, a substitute for CdS(Cadmium Sulfide) of most existing automatic switches and thus is powered by its renewably charged battery, and its usability is investigated through various experiments. At first the characteristics of CdS and the operation principle of the existing automatic switch are investigated, and then the characteristics of solar module are examined. These preparatory research shows the possibility of substitution of solar module instead of CdS in light activated switch. Secondly the suggested photovoltaic switch's circuit is designed, implemented and then its experimental comparison data shows the possibility for the replacement of the existing switch to the suggested switch, and furthermore its superiorities.

A study on the electrical characteristics of CdZnS/CdTe heterojunction (CdZnS/CdTe 이종접합의 전기적 특성에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.7
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    • pp.1647-1652
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    • 2010
  • A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

Effects of Boron Doping on Properties of CdS Films and Characteristics of CdS/CdTe Solar Cells (보론 도핑에 따른 CdS 박막 및 CdS/CdTe 태양전지 특성)

  • Lee, Jae-Hyeong;Lee, Ho-Yeol;Park, Yong-Gwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.8
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    • pp.563-569
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    • 1999
  • Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

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Ordered CdS nanorods- organic hybrid solar cells

  • Kang, Yoon-Mook;Kim, Dong-Hwan
    • New & Renewable Energy
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    • v.1 no.1 s.1
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    • pp.32-36
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    • 2005
  • We studied the optoelectronic properties of hybrid solar cells formed by mixing cadmium sulfide [CdS] nanorods with a conjugated polymer, poly-2-methoxy, 5-[2'-ethy[hexyloxy]-1,4-p-phenylenevinylene[MEH-PPV]. CdS nanorods were grown vertically on Ti substrates by electrochemical deposition through a porous alumina template. Absorption spectrum of the composite layer was the same as the superposition of the absorption spectrum of each individual layer. The photoluminescence signal from MEH-PPV film was reduced as a result of the mixing. The energy conversion efficiency of MEH-PPV improved from $0.0012\%$ to about $0.60\%$ when combined with the vertically aligned CdS nanorods.

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Improved Performance of CdS/CdTe Quantum Dot-Sensitized Solar Cells Incorporating Single-Walled Carbon Nanotubes

  • Shin, Hokyeong;Park, Taehee;Lee, Jongtaek;Lee, Junyoung;Yang, Jonghee;Han, Jin Wook;Yi, Whikun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.10
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    • pp.2895-2900
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    • 2014
  • We fabricated quantum dot-sensitized solar cells (QDSSCs) using cadmium sulfide (CdS) and cadmium telluride (CdTe) quantum dots (QDs) as sensitizers. A spin coated $TiO_2$ nanoparticle (NP) film on tin-doped indium oxide glass and sputtered Au on fluorine-doped tin oxide glass were used as photo-anode and counter electrode, respectively. CdS QDs were deposited onto the mesoporous $TiO_2$ layer by a successive ionic layer adsorption and reaction method. Pre-synthesized CdTe QDs were deposited onto a layer of CdS QDs using a direct adsorption technique. CdS/CdTe QDSSCs had high light harvesting ability compared with CdS or CdTe QDSSCs. QDSSCs incorporating single-walled carbon nanotubes (SWNTs), sprayed onto the substrate before deposition of the next layer or mixed with $TiO_2$ NPs, mostly exhibited enhanced photo cell efficiency compared with the pristine cell. In particular, a maximum rate increase of 24% was obtained with the solar cell containing a $TiO_2$ layer mixed with SWNTs.

growth of Cadmium Sulfide (CdS) Thin Film by Solution Growth Technique and Study of Quantum Size Effects (용액성장법에 의한 Cadmium Sulfide(CdS) 박막 성장 및 양자 사이즈 효과에 관한 연구)

  • 임상철
    • Journal of the Microelectronics and Packaging Society
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    • v.4 no.1
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    • pp.1-12
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    • 1997
  • 본 연구에서는 용액성장법에 의해 양자 입자로 구성된 CdS 박막을 슬라이드 유리기 판위에 성장시키고 이들의 구조적 광학적 특성에 대하여 연구하였고 이들 결과를 토대로 용 액성장법으로 성장된 CdS 박막의 양자 사이즈 효과에 대하여 연구하였다. 성장시간은 1, 3, 10, 20분이었고 성장온도는 75$^{\circ}C$였다. X-선 회절 분석결과 본 연구에서 합성된 CdS 박막은 hexagonal상의 결정구조를 갖는 것으로 나타났고 성장시간에 따라 막의 투께는 61~195nm, 입자사이즈는 8.5~22.5nm로 나타났다. 광에너지 변화에 따른 투과도 측정결과 본 연구의 CdS 시료는 성장시간에 따라 에너지 밴드갭이 2.43~2.51 eV로 나타나서 벌크 CdS의 에너 지 밴드갭인 2.42 ev보다 높은 에너지 밴드갭을 갖게 되어 양자 사이즈 효과에 의한 blue shift 현상이 용액성장법에 의해 합성된 CdS 시료에도 존재한다는 것이 밝혀졌다 그리고 이 같은 용액성장법으로 성장된 CdS에 대해 최초로 수행된 Raman 산란 실험결과 이성장방법 으로 성장된 CdS에는 1TO, E2, 1LO 포논 모드가 존재함을 알수 있었고 또한 입자 사이즈 감소에 의한 1LO포논 모드의저주파수 shift 현상 즉 포논 모드의 softening 현상이 있음이 밝혀졌고 softening은 최대6.2%까지 발생하였다. 이와같은 높은 softening은 본연구의 CdS 박막 내 양자 입자의 입도가 작은것에 기인하는 것으로 밝혀졌다. 또한 본 CdS 시료의 양 자 사이즈 효과의 결과로 1TO 포논도 나타났는데 이 1TO 포논과 E2 포논의 Raman shift 는 성장시간 즉 막의 두께와는 무관한 것으로 나타났다.행렬모형(二重比例行列模型)을 이용하여, 산업구조의 변화로 인한 직업별 인력수요 변화가 충분히 고려되도록 하였다. 전망의 결과에 따르면 향후 우리 경제는 지식기반경제(knowledge-based economy)로 이행하고 있다고 볼 수 있다. 우선 산업구조면에서 지식집약적산업으로의 구조조정이 일어나게 되고 이에 따라 산업별 취업구조에서도 고기술산업의 취업준비중이 급속히 증가하게 된다. 직업별 취업분포에 있어서도 전문기술직 행정관리직 등의 고숙련 사무직의 비중은 크게 증가하는 반면 생산관련직과 농림어업직의 비중은 감소하게 된다. 이처럼 경제가 지식집약화되어 감에 따라 고학력자에 대한 수요는 지속적으로 증가하지만 현재 적절한 인력양성과 공급이 이루어지지 않고 있어 향후 기술이나 기능에 따른 수급부일정(需給不一政)(skill mismatch)현상이 매우 심해질 것으로 보인다. 따라서 앞으로의 인력정책에서 가장 주안점을 두어야 할 부분은 첨단기술산업과 관련된 인력의 양성에 있다고 하겠다.2시간까지 LPDG용액은 MEC용액보다 비교적 나은 회복을 보였고 재관류 3일과 7일의 폐기능 평가에서 두 용액 모두에서 폐기능의 점차적 소실을 보였으며 이는 병리조직검사에서 보듯이 폐혐에 의한 외적인 요소라고 생각되며 따라서 LPDG용액은 허혈재관류손상 방지 및 급성폐렴 등 염증을 잘 관리한다면 20시간 이상 LPDG용액의 안전한 폐보존의 가능성 을 얻을 수 있었다.ic 형태로 외래유전자가 발현되었지만 대조구에서 87.0% (26/30개) 배반포기가 $\beta$-Gal 활력을 보인 반면, G418 처리구에서는 모든 배반포기가 $\beta$-Gal 활력을 보였다 (P<0.05). 그러나 대조구 및 G418 처리구의 ICM

Preparation of Cadmium-free Buffer Layers for CIGS Solar Cells (CIGS 태양전지용 Cd-Free 버퍼층 제조)

  • Moon, Jee Hyun;Kim, Ji Hyeon;Yoo, In Sang;Park, Sang Joon
    • Applied Chemistry for Engineering
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    • v.25 no.6
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    • pp.577-580
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    • 2014
  • Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

Effects of pH of Reaction Solution on the Structural and Optical Properties of CdS Thin Films for Solar Cell Applications (태양전지용 CdS 박막의 구조적 및 광학적 특성에 미치는 반응용액의 pH 영향)

  • Lee, Jae-Hyeong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.616-621
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    • 2011
  • In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.