• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.411-414
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• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.371-378
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• 1996

An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.21-26
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• 2020

This article reports the result on the spectroscopic analysis of the three Lightbox CVD-grown diamonds. Lightbox Jewelry, a De Beers company, has begun selling CVD laboratory-grown diamonds since September 2018. Recently, we had the opportunity to examine three Lightbox's pendant necklaces. The 0.25 ct, 0.25 ct, and 0.26 ct round brilliant were graded as "H" near colorless, Fancy Vivid orangy pink, and Fancy Vivid blue with cut grades of excellent, respectively. The laser-inscribed Lightbox logo under the table, large enough to be easily visible with a microscope. Based on the spectroscopic techniques, for near colorless sample was not subjected to post-growth HPHT processing to improve its color. For pink sample, optical centers at H3, 3H, 594 nm, NV, and GR1 were recorded. It was speculated that the pink sample have been received irradiation and annealing. In addition, the blue CVD synthetic sample was concluded to be irradiated without annealing.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2003.10a
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• pp.181-184
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• 2003

본 연구에서는 열 필라멘트 화학증착 방법에 의한 나노 다이아몬드 박막 증착을 위해 핵 생성 밀도를 증가시키기 위해서 다이아몬드 특성을 갖는 탄소(Diamond-Like Carbon)박막들을 연속 및 펄스 플라즈마를 이용한 화학 증착법에 의하여 증착하여 그 특성을 SEM, XPS, Raman 및 Nano-Tester를 이용하여 분석하였으며 열 필라멘트 화학 증착법에 의하여 나노 다이아몬드 박막 형성에 대한 핵 밀도와 다아이몬드 특성을 갖는 탄소 박막의 특성의 연관성을 관찰하여 공구(WC-Co)의 표면 사전 처리 없이 나노 다이아몬드 박막 형성을 용이하게 하는 실험을 수행하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.203-205
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• 1996

DLC(Diamond-Like Carbon) films were prepared by Inductively Coupled Plasma(ICP) CVD system. It was confirmed that the field emission characteristics are closely related to the richness of C-H bonding incorporated in the DLC. According to Fowler-Nordheim equation, it is thought that the ability of DLC to emit electron at relatively low voltage is due to the field enhancement caused by the nodules of ${\sim}100nm$ size on the surface of DLC. The electric field to start field emission was about $1.4{\times}10^9V/m$ in case of DLC film deposited at input power of 400W and substrate bias of -100V.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.356-360
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• 2001

Properties of a free-standing diamond wafer with a diameter of 80 mm and a thickness of 900~950 $mu extrm{m}$ deposited by the multi-cathode direct current plasma assisted chemical vapor deposition (MCDC PACVD) method were investigated. Defects of the diamond film were observed by optical transmission microscopy and its crystallinity was characterized by Raman and IR spectroscopy. Defects were distributed partially on boundaries of the grain. In the grain, (111) plane contained a higher defect density than that on (100) plane. FWHM of Raman diamond peak and IR transmission at 10.6 $\mu\textrm{m}$ were 4.6 $\textrm{cm}^{-1}$ /~5.3 $\textrm{cm}^{-1}$ and 51.7 ~ 61.9 %, and their uniformity was $\pm$7% and $\pm$9%, respectively. The diamond quality decreased with going from center to edge of the wafer.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.33-33
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• 1998

Invisible charged clusters are suggested to form in the gas phase and to become the growth unit in the thin film process. Similar suggestion had been made by Glasner el al. in the crystal growth of KBr and KCL in the solution where the lead ions were added. The charged cluster model, which was suggested in the diamond CVD process by our group, will be extended to the other thin film processes. It will be shown based on both the theoretical analysis and the experimental evidences that the charged clusters are formed in the gas phase and become the growth unit of the crystal in the thin film process.