• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.10
• /
• pp.2639-2645
• /
• 2009

This paper describes a CPW oscillator using a spiral resonator. Spiral resonators are very useful in design CPW oscillators since they show a relatively higher Q than CPW hairpin and helical resonators. Prior to the design of oscillators, three CPW resonators are designed and compared. Electromagnetic (EM) simulation are performed for an improved design in design the CPW resonators and oscillators. Three oscillators are designed at 5.7 GHz using the mentioned CPW resonators. The measured output power of three CPW oscillators using the helical, hairpin, and spiral resonators are 2.55 dBm, 2.64 dBm, and 4.98 dBm, respectively. In addition, the size of three resonators are $102.15mm^2,\;130.05mm^2,\;80.625mm^2$, respectively, so it is proven that the proposed CPW oscillator using the spiral resonator has a smaller size than the others.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.1125-1128
• /
• 2003

This paper presents the design method of a Colpitts type oscillator with coplanar waveguide(CPW) structures in the range of Ka-band frequency for transmitter and receiver modules. Series short stubs of CPW patterns provide inductances and capacitances in the range of Ka-band which can be expressed as a CLC-$\pi$ equivalent circuit. The experimentation has employed ro4003 substrates as a CPW substrate which has a dielectric constant of 3.38 and a signal and ground space of 100um. A method of momentum simulation for the CPW patterns has performed with an ADS software tool of Hewlett-Packard Corp. Inductance and capacitance circuits of a Colpitts oscillator was interconnected to a MESFET with CPW bend structures of including the input and output impedance matching circuits of the active transistor. Circuit parameters for impedance matching were determined through the network conversion to the equivalent length of CPW transmission lines by using T-network 1 $\pi$-network conversion circuit. A Colpitts oscillator was fabricated on the substrate of a area of 8.5mm x 17.4mm with a MESFET of Fujitsu FMM5704X and CPW series short stubs. The design suggested the possibility of realizing oscillators on a planar surface for the wireless system of tansmitter and receiver modules in the frequency range of 30GHz

• ETRI Journal
• /
• v.28 no.4
• /
• pp.529-532
• /
• 2006

This letter describes a compact printed helical resonator and its application to a microwave oscillator circuit implemented in coplanar waveguide (CPW) technology. The high quality (Q)-factor and spurious-free characteristic of the resonator contribute to the phase noise reduction and the harmonic suppression of the resulting oscillator circuit, respectively. The designed resonator showed a loaded Q-factor of 180 in a chip area of only 40% of the corresponding miniaturized hairpin resonator without any spurious resonances. The fully planar oscillator incorporated with this resonator showed an additional phase noise reduction of 10.5 dB at a 1 MHz offset and a second harmonic suppression enhancement of 6 dB when compared to those of a conventional CPW oscillator without the planar helical resonator structure.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2005.11a
• /
• pp.101-106
• /
• 2005

This paper presents a new microwave oscillator incorporating a corrugated coplanar waveguide (CCPW) electromagnetic bandgap (EBG) structure as its terminating resonance component. The use of a compact CCPW EBG structure was effective in reducing the phase noise and improving the harmonic characteristics of the microwave oscillator circuit without additional backside processing and drastic size increment. The fully planar CCPW oscillator oscillating at the frequency of 5.41 GHz showed a phase noise characteristic of -90.7 dBc/Hz at 100kHz offset and a second harmonic suppression of 42.67 dB.

• Journal of electromagnetic engineering and science
• /
• v.6 no.3
• /
• pp.160-164
• /
• 2006

This paper describes a compact printed helical resonator and its application to a microwave oscillator circuit implemented in coplanar waveguide(CPW) technology. The high Q-factor and spurious-free characteristic of the resonator contribute to the phase noise reduction and the harmonic suppression of the resulting oscillator circuit, respectively. The designed resonator resonating at the frequency of 5.5 GHz showed a loaded Q of 180 in a chip area of only 40 % of the corresponding miniaturized hairpin resonator without any spurious resonances. The fully planar oscillator incorporated with this resonator showed additional phase noise reduction of 10.5 dB at 1 MHz offset and a second harmonic suppression enhancement of 6 dB when compared to those of a conventional CPW oscillator without the planar helical resonator(PHR) structure.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.4 no.2 s.7
• /
• pp.81-87
• /
• 2005

In this paper, a VCDRO(Voltage Control Dielectirc Resonator Oscillator) for signal source of doppler radar system is designed and fabricated. The proposed VCDRO is made with new tuning mechanism using CPW line. The coplanar waveguide of $\lambda_{g}$/2 in length with varactor diode is placed on the metallization side under the dielectric resonator and coupled to it. Tuning varactor diode is mounted at one end of the CPW. The proposed circuit tuned by a CPW allows one more varactor diode to be mounted on the optimized CPW, where a greater sensitivity of frequency tuning is needed. With varying the biasing voltage for the varactor diode from 0 V to 15 V, output frequency tuning of 12 MHz is obtained. The PLDRO exhibits output power of 16.5 dBm with phase noise in the phase locked state characteristic of -115 dBc/Hz at 100 Hz, -105 dBc/Hz at the 10 kHz, and -102 dBc/Hz at 1 Hz offset from 10.525 GHz , respectively.

• Proceedings of the KAIS Fall Conference
• /
• 2008.11a
• /
• pp.69-71
• /
• 2008

본 논문은 CPW 맴돌이형 공진기를 이용하여 설계한 발진기에 대하여 기술한다. 제안된 CPW 맴돌이형 공진기는 CPW 선로 주변과 접지면 사이에 다수개의 맴돌이 구조를 포함한다. 맴돌이형 공진기는 평면형 구조에서 비교적 높은 Q 값을 가지고 있기 때문에, 발진기의 출력뿐만 아니라, 위상 잡음 개선에도 좋은 영향을 끼친다. 또한 평면형 전송선로 구조이므로 마이크로스트립은 물론 CPW 구조로도 설계가 가능하다. 설계한 발진기를 실제로 측정하여 6.54GHz에서 3.98dBm의 출력 특성과 -118.1dBc/Hz @1MHz의 위상잡음 특성을 얻었다.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.335-338
• /
• 2004

We suggest Q-band MEMS MIMIC (Millimeter wave Monolithic Integrated Circuit) HEMT Oscillator using DAML (Dielectric-supported Airgapped Mcrostrip Line) structure. We elevated the signal lines from the substrate using dielectric post, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency. These DAML are composed with heist of $10\;{\mu}m$ and post size with $20\;{\mu}m\;{\times}\;20\;{\mu}m$. The MEMS oscillator was successfully integrated by the process of $0.1\;{\mu}m$ GaAs PHEMTs, CPW transmission line and DAML. The phase noise characteristic of the MEMS oscillator was improved more than 7.5 dBc/Hz at a 1 MHz offset frequency than that of the CPW oscillator And the high output power of 7.5 dBm was measured at 34.4 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.4
• /
• pp.45-50
• /
• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.2
• /
• pp.89-95
• /
• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.