• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.383-383
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• 2011

Generally, field emitters can be categorized into two types according to the emitter shape, one is a planar field emitter and the other is a point emitter. The planar field emitter is used for displays, flat lamps and signage boards. On the other hands, the point field emitter is expected to play a significant role in x-ray sources and electron beam sources. Such applications of the point field emitters, especially, need large emission current and high emission stability with a small electron beam size. A few reports announced point emitters made by carbon nanotubes (CNTs). However, they still have suffered from poor reproducibility and low emission current. Here, we demonstrated high performance CNT point emitters by attaching CNTs onto graphite rod. Graphite rod exhibited good electrical conductivity and chemical stability. In this method, the shape of the point emitter could be easily controlled by changing the length and diameter of the graphite rod. The CNT point emitter showed emission current over 1 mA at an applied electric field of 1.4 V/${\mu}m$. We consider that the stable emission performance is attributed to the stable contact between CNTs and graphite rod.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.212-216
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• 2004

In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron omission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ${\mu}{\textrm}{m}$ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilling the substrate, we made CNTs emitters both with and without SiO$_2$layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.115-119
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• 2011

A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1410-1411
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• 2011

Tip-type carbon nanotube(CNT) based electron emitters were fabricated by forming a hafnium(Hf) interlayer between the CNT and the substrate. The CNTs were deposited by using the electrophoretic deposition method and thermally treated. No significant change in the microscopic structure of the CNTs, such as the ratio of length to diameter, was observed after the deposition of Hf interlayer and thermal treatment. As compared with the CNT emitter without the Hf-interlayer and thermal treatment, the CNT emitter with the Hf-interlayer and thermal treatment showed noticeably improved electron-emission properties due to the enhanced adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.76-79
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• 2003

The characteristic of single wall carbon nanotube (SW-CNT) and herringbone nano fiber (HB-CNF) emitters was described. SW-CNT synthesized by arc discharge and HB-CNF prepared by thermal CVD were mixed with binders and conductive materials, and then were formed by screen-printing process. In order to obtain efficient field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNT and CNF emitters. The basic structure of FED was of a diode type through fully vacuum packaging. Also, we proposed a new triode type of field emitter using a mesh gate plate having tapered holes and could achieve the ideal triode properties with no gate leakage currents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.43-43
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• 2010

we have investigated the field emission characteristics of the CNT/TEOS hybrid thin films fabricated by a spray method. It is found that the CNT/TEOS hybrid emitters show high current density, low turn on field, and long-term emission stability compared to the CNT emitters. These efficient field emission characteristics of the CNT/TEOS hybrid emitters are attributed to the TEOS sol, acting as a protection layer of nanotube emitter by surrounding the nanotube tip as well as a binder material to enhance the adhesion of nanotube emitters to the substrate. Therefore, the CNT/TEOS hybrid emitters could be utilized as an alternative for the efficient and reliable field emitters.

• Carbon letters
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• v.10 no.3
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• pp.234-238
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• 2009

The field emitters were fabricated by screen-printing of carbon nanotube paste, and their emission stabilities were evaluated. It was found that the emission stability measured in a sealed device is much higher than that measured in a vacuum chamber in spite of similar pressure. This was because oxygen gas was scarcely remained in the sealed device, while the gas is continuously supplied into the vacuum chamber during the stability measurement. It was found that the plasma treatment etched the protruded CNTs, resulting in the uniform height of CNT tips. As a result, the stability was increased remarkably. It was also found that the stability of CNT paste emitter was improved by electrical aging and that the optimum condition for the aging was varied with the size of emitter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.463-464
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• 2006

광산업 및 디스플레이 산업의 발전에 따라 관련 제품의 핵심 부품 및 소재 개발이 매우 중요하게 대두되고 있다. 전계방출 소자 및 back light가 되는 나노 발광체의 핵심소재중 하나인 CNT paste는 국내외에서 연구가 진행중이다. 본 연구에서는 메탄올속에서 초음파를 이용하여 분산시킨 CNT 분말, 유기 바인더, 용매, glass frit, Ag powder 등을 사용하여 paste를 만들고, TGA(Thermogravimetric Analyzer)와 SEM(Scanning Electron Microscopy) 분석에 의해 제조 공정의 최적화를 실시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.923-926
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• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.145-147
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• 2009

The cost effective structures and materials for the carbon nanotube (CNT) back light unit (BLU) are proposed. Simplified device structures and related electron emitter materials are prepared. CNT emitters were screen printed or remotely mounted on the back plate, and this enabled less than two photo patterning steps. Besides the cost benefits, operating voltage was dramatically decreased and higher current density was obtained