• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1522-1527
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• 2004

In this paper, slurry fluid motion, abrasive particle motion, and effects of groove sizing on the pads are numerically investigated in the 2D geometry. Groove depth is optimized in order to maximized the abrasive effect. The simulation results are analyzed in terms of shear stress on pad, groove and wafer, streamline and velocity vector. The change of groove depth entails vortex pattern change, and consequently affects material removal rate. Numerical analysis is very helpful for disclosing polishing mechanism and local physics.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2003년도 학술대회지
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• pp.402-402
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• 2003

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.622-625
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• 2004

The CMP monitoring system was newly developed by the aid of friction force measurement, resulting from installation of piezoelectric quartz sensor on R&D polisher. The correlation between friction and CMP results was investigated in terms of tribological aspects by using the monitoring system. Various friction signals were monitored and analyzed by the change of experimental conditions such as pressure, velocity, pad and slurry. First of all, the lubrication regimes were classified with Sommerfeld Number through measuring coefficient of friction in ILD CMP. And then, the removal mechanism of abrasives could be understood through the correlation with removal rate and coefficient of friction. Especially, the amount of material removal per unit sliding distance is directly proportional to the friction force. The uniformity of CMP performances was also deteriorated as coefficient of friction increased.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• 한국정밀공학회지
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• 제32권7호
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• pp.627-631
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• 2015

Conventional etching technology is in the face of problems such as dishing, erosion resulting from non-uniform removal of film. Advanced printed circuit board (PCB) requires accurate wire formation with the aid of planarization by chemical mechanical polishing (CMP). Linear roll CMP is a line contact continuous process which removes the film by pressurization and rotation while slurry is supplied to polishing pad attached to the roll. This paper focuses on the design of floating nozzle on the linear roll CMP equipment which makes the slurry supply uniformly on the roll pad. Experimental results show that removal rate using the floating nozzle increases 3 times higher than that without it and non-uniformity is less than 15%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.178-181
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• 2002

We studied the characteristics of polishing pad, which can apply W CMP process for global planarization of multilevel interconnection structure. Also we investigated the effects of different sets of polishing pad. The purpose of this experiment is the cost reduction by the increase of pad life time and decrease of cycle time and slurry usage with new pad. Especially we studied the effect of polishing pad for CMP process by this experiment of polishing pad that is consumables material during CMP process. We expecting the increase of process throughput and improvement of device manufacturing yield because we can choose optimum polishing pad through this result.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• 한국정밀공학회지
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• 제21권7호
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• 한국분말재료학회지
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• 제25권5호
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• pp.395-401
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• 2018

The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

• 유기물자원화
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• 제32권1호
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• pp.21-29
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• 2024

본 연구에서는 반도체 패키징의 몰딩 공정에서 발생하는 EMC 폐기물을 재활용하여 실리카 나노입자를 성공적으로 제조하였으며, 이를 CMP 공정용 슬러리의 연마재 물질로 응용하였다. 상세히는, EMC 폐기물을 암모니아 용액과 소니케이터를 활용하여 열과 에너지를 가하는 에칭 과정을 통해 실리카 나노입자를 제조하기 위한 실라놀 전구체를 추출하였다. 이후 실라놀 전구체를 활용하여 졸-겔법을 통해 약 100nm를 나타내는 균일한 구형의 실리카 나노입자(e-SiO₂, experimentally synthesized SiO₂)를 합성하였다. 제조한 e-SiO₂는 물리화학적 분석을 통해 상용화된 실리카 입자(c-SiO₂, commercially SiO₂)와 동일한 형상과 구조를 지니고 있음을 확인할 수 있었다. 최종적으로, e-SiO₂를 연마재로 사용하여 CMP 공정용 슬러리를 제조하여 실제적인 반도체 칩의 연마 성능을 확인하였다. 그 결과, 반도체 칩의 표면에 존재하던 스크래치가 성공적으로 제거되어 매끈한 표면으로 바뀌게 된 것을 확인하였다. 본 연구 결과는 물질의 재활용법에 대한 설계를 통해 EMC 폐기물의 부가가치를 향상시키기 위하여 반도체 공정에서 대표적으로 활용되는 고부가가치 소재인 실리카 입자로 성공적으로 제조하고 이를 응용하는 방법에 대해 제시하였다.