• Journal of the Korean Society for Precision Engineering
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• v.34 no.2
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• pp.101-106
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• 2017

The chemical mechanical planarization (CMP) process combines the chemical effect of slurry with the mechanical effect of abrasive (slurry)-wafer-pads The slurry delivery system has a notable effect on polishing results, because the slurry distribution is changed by the supply method. Thus, the investigation of slurry pumps and nozzles with regard to the slurry delivery system becomes important. This paper investigated the effect of a centrifugal slurry pump on a spray nozzle system in terms of uniform slurry supply under a rotating copper (Cu) wafer, based on experimental results and computational fluid dynamics (CFD). In conventional tools, the slurry is unevenly and discontinuously supplied to the pad, due to a pulsed flow caused by the peristaltic pump and distributed in a narrow area by the tube nozzle. Adopting the proposed slurry delivery system provides a higher uniformity and lowered shear stress than usual methods. Therefore, the newly developed slurry delivery system can improve the CMP performance.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.601-602
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2233-2234
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2235-2236
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1267-1268
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2,CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1727-1728
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.50-50
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• 2007

최근 DRAM 소자 내에서 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 고유전체와의 높은 안정성등과 같은 특성으로 인해 금속층-유전막(insulator)-금속층 캐패시터에 대한 하부전극으로 각광받고 있다. 일반적으로 Ru은 화학적으로 매우 안정하여 습식 식각으로 제거하기 어려우며, 이로인해 건식 식각을 이용하여 Ru을 제거하는 것이 널리 통용되고 있다. 하지만 칵 캐패시터의 분리를 위해 Ru을 건식 식각할 경우, 유독한 $Ru0_4$ 가스가 발생할 수 있으며 Ru 하부전극의 탈균일한 표면과 몰드 산화막의 손실을 유발할 수 있다. 이로인해 각 캐패시터간의 분리와 평탄화를 위해 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 공급되는 슬러리에는 부식액, pH 적정제, 연마입자등이 첨가되는데 이때 연마입자가 응집하여 슬러리의 분산 안정성 저하에 영향을 줄 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 surfactant와 같은 첨가제에 따른 zeta potential, particle size, sedimentation의 분석을 통해 slurry 안정성에 대란 영향을 살펴보았다. 또한 선택된 surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru의 removal rate와 TEOS에 대한 selectivity를 측정해 보았다.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.260-265
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• 2012

Impedance spectroscopy was used to monitor the hydration in the electrical/dielectric behaviors of chemical mechanical planarization (CMP)-blended cement mixtures. The electrical responses were analyzed using their equivalent circuit models, leading to the separation of the bulk and electrode based responses. The role of the CMP slurry was monitored as a function of the relative compositions of the CMP-blended cements, i.e. water, CMP slurry, and ordinary Portland cement. The presence of $Al_2O_3$ nanocrystals in the CMP slurries appeared to accelerate the hydration process, along with a more tortuous microstructure in the hydration, with enhanced hydration products. The frequency-dependent impedance spectroscopy was proven to be a highly efficient approach for evaluating the electrical/dielectric monitoring of the change in the pore structure evolution that occurs in CMP-blended cements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.