• 농업과학연구
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• 제48권3호
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• pp.423-432
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• 2021

This experiment was conducted to investigate the effect of Cordyceps militaris with probiotics (CMP) supplementation on the growth performance, meat quality and storage characteristics, and cordycepin content in the meat. Sixty one-day-old broilers (Ross 308) were allotted to two treatment groups of 30 each. In addition, six broilers were randomly assigned to a cage in the two treatment groups. The two dietary treatments were as follows: Control (CON) and basal diet + 0.5% of CMP. Body weight and feed intake were measured on the 1st, 14th, and 28th days from the start of the experiment. On days 1 - 14, the supplementation of CMP improved (p < 0.05) the body weight gain (BWG) and feed conversion ratio (FCR). Additionally, the feed intake (FI) and FCR scores in the CMP groups improved (p < 0.01) compared to the CON during the entire period. For the meat quality characteristics, water holding capacity (WHC), cooking loss (CL), redness (a^*) in meat color value, and shearing force (SF) for the CMP group were improved (p < 0.01) compared to the CON group. For the meat storage characteristics, pH and thiobarbituric acid reactive substances (TBARS) were improved (p < 0.01) when the broilers were fed CMP compared to the CON group. Broilers fed CMP had a higher (p < 0.01) cordycepin content in the meat compared to the CON group. In conclusion, CMP improves the growth performance and meat quality of broilers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.715-718
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• 2004

In this paper, we studied the characteristics of new polishing pad, which can apply W-CMP process for global planarization of multi-level interconnection structure. The hardness and density were measured as a function of groove pattern. Also, we compared the pore size through the SEM photograph. Finally, we investigated the CMP characteristics with five different kind of groove pattern sample. Through the above results, we can select optimum groove pattern, so we can expect to begin home product of polishing pad.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.23-26
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• 2002

In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of diluted slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.105-108
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• 2003

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• 한국식품영양과학회지
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• 제27권6호
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• pp.1117-1124
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• 1998

Chymosin was purified from commercial rennet with DEAE Sepharose CL 6B and immobilized on CeliteTM using glutaraldehyde. Whole casein from fresh raw milk was hydrolyzed by immobilized chymosin and total CMP was isolated by trichloroacetic acid(TCA) and ultrafiltration, and characterized. The amount of chymosin purified from 15g commercial rennet by DEAE Sepharose CL 6B was 0.16g and 18mg of chymosin was immobilized on 1g of CeliteTM by 5% glutaraldehyde. Immobilized chy mosin hydrolyzed most of casein on whole casein within 2 hours to leave para casein and casei nomacropeptide(CMP). The total CMP isolated from 10g of whole casein hydrolyzate by TCA and ultrafiltration was 0.4g and 0.1g, respectively. Results of electrophoresis, amount of sialic acid, com position of amino acid and ratio of A280 to A214 showed that total CMP by TCA was purer and had more CMP without carbohydrate than one by ultrafiltration. CMP isolated from total CMP by 12% TCA precipitation was 50% of total CMP and most of caseinoglycopeptide(CGP) was removed from total CMP, indicating less amount of sialic acid in CMP than in total CMP.

• Tribology and Lubricants
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• 제30권3호
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• pp.139-145
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• 2014

Nowadays, most micro-patterns are manufactured during flow line production. However, a conventional rotary chemical mechanical polishing (CMP) system has a limited throughput for the fabrication of large and flexible electronics. To overcome this problem, we propose a novel linear roll-CMP system for the planarization of large-area electronics. In this paper, we present a statistical analysis on the linear roll-CMP process of copper-clad laminate (CCL) to determine the impacts of process parameters on the material removal rate (MRR) and its non-uniformity (NU). In the linear roll-CMP process, process parameters such as the slurry flow rate, roll speed, table feed rate, and down force affect the MRR and NU. To determine the polishing characteristics of roll-CMP, we use Taguchi's orthogonal array L16 (44) for the experimental design and F-values obtained by the analysis of variance (ANOVA). We investigate the signal-to-noise (S/N) ratio to identify the prominent control parameters. The "higher is better" for the MRR and "lower is better" for the NU were selected for obtaining optimum CMP performance characteristics. The experimental and statistical results indicate that the down force and roll speed mainly affect the MRR and the down force and table feed rate determine the NU in the linear roll-CMP process. However, over 186.3 N of down force deteriorates the NU because of the bending of substrate. Roll speed has little relationship to the NU and the table feed rate does not impact on the MRR. This study provides information on the design parameter of roll-CMP machine and process optimization.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.303-308
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• 2005

In this paper, the effects of oxidants on tungsten chemical mechanical polishing (CMP) process were investigated using three different oxidizers such as Fe(NO₃)₃, KIO₃ and H₂O₂. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization measurement with three different oxidizers, in order to compare the effects of W-CMP and electrochemical characteristics on the tungsten film as a function of oxidizer. As an experimental result, the tungsten removal rate reached a maximum at 5 wt％ Fe(NO₃)₃concentration, and when 5 wt％ H₂O₂was added in the slurry, the removal rate of W increased. Also, the microstructures of surface layer by atomic force microscopy(AFM) image were greatly influenced by the slurry chemical composition of oxidizers. It was shown that the surface roughness and removal rate of the polished surface were improved in Fe(NO₃)₃than KIO₃. The electrochemical results indicate that the corrosion current density of the 5 wt％ H₂O₂ and 5 wt％ H₂O/sub 2+/＋ 5 wt％ Fe(NO₃)₃was higher than the other oxidizers. Therefore, we conclude that the W-CMP characteristics are strongly dependent on the kinds of oxidizers and the amounts of oxidizer additive.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.376-377
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• 2006

Chemical Mechanical Planarization (CMP) has emerged as an enabling technology for the manufacturing of multi-level metal interconnects used in high-density Integrated Circuits (IC). Recently, multi-level structures have been also widely used m the MEMS device such as micro engines, pressure sensors, micromechanical fluid pumps, micro mirrors and micro lenses. Especially, among the thin films available in IC technologies, polysilicon has probably found the widest range of uses in silicon technology based MEMS. This paper presents the characteristic of polysilicon CMP for multi-level MEMS structures. Two-step CMP process verifies that is possible to decrease dishing amount with two type of slurries characteristics. This approach is attractive because two-step CMP process can be decreased dishing amount considerably more then just one CMP process.