• 제목/요약/키워드: CIGS solar cell

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플렉서블 CIGS 태양전지의 고온고습 환경 고장 기구 분석 (Evaluation of Failure Mechanism of Flexible CIGS Solar Cell Exposed to High Temperature and Humid Atmosphere)

  • 김혁수;변재원
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제16권1호
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    • pp.41-47
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    • 2016
  • Purpose: The purpose of this study was to evaluate electrical and structural degradation of flexible CIGS sollar cell exposed to high temperature and humid atmosphere. Method: Accelerated degradation was performed for various time under $85^{\circ}C/85%RH$ and then electrical and structural properties were analyzed by 4-point probe method, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Results: Sheet resistance of the top ITO layer increased with exposure time to the high temperature and humid atmosphere. Blunting of the protrusion morphology of ITO layer was observed for the degraded specimen, while no phase change was detected by XRD. Oxygen was detected at the edge area after 300 hours of exposure. Conclusion: Increase in electrical resistance of the degraded CIGS solar cell under high temperature and humid environment was attribute to the oxygen or water absorption.

연성 CIGS 태양전지의 기판과 박막층의 두께에 따른 잔류응력해석 (Analysis of the residual stress as the thickness of thin films and substrates for flexible CIGS solar cell)

  • 한윤호;이민수;엄호경;김동환;임태홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.116.2-116.2
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    • 2011
  • 연성 CIGS 태양전지를 제작하기 위해서는 휘어지는 연성 기판재의 적용이 반드시 필요하다. 상용되는 연성 기판재로는 플라스틱, 폴리이미드, 금속재가 있다. 그러나 플라스틱과 폴리이미드는 고효율의 CIGS 흡수층을 제조하기 위한 $500{\sim}600^{\circ}C$의 공정에 접합하지 못하다. 금속 기판재의 경우는 몰리브데늄, 알루미늄, 티타늄, 크롬강, 스테인레스강, 합금재 등이 있다. 이러한 금속 기판재 중에서 Fe-Ni 합금재는 Ni 함량의 변화에 따라 기계적, 자기적, 열팽창 특성이 다르게 나타나는 것으로 알려져 있다. 선행 연구에서 CIGS 태양전지의 기판재로 열팽창 계수가 박막층과 유사한 SUS400번 계열과 Fe-52Ni이 적합하다는 것을 확인 하였다. 따라서 본 연구에서는 유한요소해석(Finite element analysis) 프로그램인 Algor를 이용하여 CIGS solar cell을 설계하고 Fe-52Ni 기판재와 절연층인 SiO2, 흡수층인 CIGS의 두께에 따른 Cell의 잔류응력을 해석하였다.

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투명 전도막 개선을 통한 Cu(Inx,Ga1-x)Se2 박막태양전지 효율 향상에 관한 연구 (Improvement of Efficiency of Cu(Inx,Ga1-x)Se2 Thin Film Solar Cell by Enhanced Transparent Conductive Oxide Films)

  • 김기림;손경태;김민영;조성희;신준철;임동건
    • 한국전기전자재료학회논문지
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    • 제27권4호
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    • pp.203-208
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    • 2014
  • In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

플렉서블 CIGS 태양전지의 굽힘 응력에 의한 셀 특성 변화 연구 (Changes of Photovoltaic Properties of Flexible CIGS Solar Cell Under Mechanical Bending Stress)

  • 김성준;김제하
    • 한국전기전자재료학회논문지
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    • 제33권3호
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    • pp.163-168
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    • 2020
  • We studied the change of photovoltaic properties of a flexible CuInxGa(1-x)Se2 (CIGS) solar cell fabricated on polyimide by mechanical bending with curvature radii of 75 mm (75R) and 20 mm (20R). The flexible CIGS cells were flattened on a PET film, then placed and forced against the surface of a curved block fabricated with pre-designed curvatures. Both up (compressive) and down (tensile) bending were applied to a specimen of CIGS on PET with curvatures of 75R and 20R for 10,000 times and 2,000 times, respectively. From J-V measurements, we found that the conversion efficiency (Eff.) was reduced by 3% and 4% for up-and down-bending, respectively, at curvature 75R; it was greatly reduced by 15% for curvature 20R in the up-bending. However, the open circuit voltage (Voc) and short-circuit current density (Jsc) seemed to change little, within 3%, for the applied mechanical stresses. The degradation in Eff. resulted from the deterioration of the series (Rs) and shunt (Rsh) resistances of the solar cell.

Electrical Characterization of Cu(InxGa1-x)(SySe2-y) Thin Film Solar Cells

  • Kim, Dahye;Kim, Ji Eun;Cho, Yunae;Kim, Dong-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.464.1-464.1
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    • 2014
  • Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.

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KS C 8562 평가를 통한 CIGS 태양광모듈의 출력 거동 분석 (Current-Voltage Measurement Behavior of the CIGS Solar Module through the Evaluation of KS C 8562 Standard)

  • 김경수
    • Current Photovoltaic Research
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    • 제12권2호
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    • pp.41-47
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    • 2024
  • CIGS solar cells are thin film solar cells that have excellent light absorption coefficient and can be manufactured with high efficiency through the use of low materials. In Korea, they must pass KS certification for home and commercial installation. KS C 8562 is a standard for evaluating the durability of CIGS and thin film amorphous silicon solar modules and deals with contents such as light, temperature, humidity, and mechanical durability. Unlike general crystalline silicon solar modules, the CIGS solar module has a different behavior of output change through these environmental tests, so if it shows 90% or more of the rated output suggested by the manufacturer after the final test, it is judged to be a suitable product. In this paper, the output before and after individual tests was measured through the test method of KS C 8562 to observe the output change and to discover the vulnerabilities of the CIGS solar module when exposed to various environments. Through this, it was confirmed that humidity exposure was the most vulnerable and that it had output recovery characteristics for light (visible light and ultraviolet rays). This study attempted to present the output behavior characteristics and data of the CIGS module at the time when the high efficiency thin film photovoltaic module market is expected to be created in the future.

Polyimide 기판을 이용한 Flexible CIGS 박막 태양전지 제조 (Fabrication of Flexible CIGS thin film solar cells using Polyimide substrate)

  • 정승철;안세진;윤재호;곽지혜;김도진;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.153-155
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    • 2009
  • In this study, we fabricated the $Cu(In,Ga)Se_2$ (CIGS) thin-film solar cells by using a polyimide substrate. The CIGS thin-film was deposited on Mo coated polyimide substrate by a 3-stage co-evaporation technique. Because the polyimide shows thermal transformation at about $400^{\circ}C$, the substrate temperature of co-evaporation process was set to below $400^{\circ}C$. Corresponding solar cell showed a conversion efficiency of 7.08 % with $V_{OC}$ of 0.58 V, $J_{SC}$ of 24.99 $mA/cm^2$ and FF of 0.49.

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Cu(In,Ga)$Se_2$ Absorber Layer Prepared by Electron Beam Evaporation Method for Thin Film Solar Cell

  • Li, Zhao-Hui;Cho, Eou-Sik;Noh, Gap-Seong;Lim, Jae-Eok;Pahk, Heui-Jae;Bae, Kyung-Bin;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1564-1567
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    • 2009
  • Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.

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CIGS 태양전지 광흡수층에 미치는 나트륨의 영향 (The effect of Sodium on the property of CIGS solar cell absorber)

  • 박태정;안병태
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.16-18
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    • 2009
  • CIGS 박막태양전지는 박막태양전지 중 최고 효율(20%)을 보이는 태양전지로 각광받고 있다. 이러한 고효율 태양전지는 Soda-lime glass 를 기판으로 사용한 경우로 기판과 CIGS층의 열팽창계수가 비슷하고 또 나트륨이 CIGS 성장시 확산하여 광흡수층에 유익한 영향을 준다고 알려져 있다. 본 실험에서는 나트륨이 함유된 소다라임유리와 거의 포함하고 있지 않은 코닝유리를 기판으로 사용하여 CIGS 광흡수층의 차이를 분석하였다. SIMS, SEM분석결과 소다라임유리의 CIGS Mo 부근과 표면부위에 Na 농도가 높으며, grain 크기가 코닝에 비해 작음을 알 수 있었다. 전기적 특성은 소다라임유리기판의 경우 p-type 농도가 코닝유리기판에 비해 약 $10^5{\sim}10^6$천배가량 높음을 확인하였다. 셀특성또한 코닝 11%, SLG는 16%로 효율차이가 발생하였으며 이는 나트륨으로 p-type 전도도가 향상되어 효율이 개선되는 것으로 판단된다.

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