• Title/Summary/Keyword: CHF

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Coolant Options and Critical Heat Flux Issues in Fusion Reactor Divertor Design

  • Baek, Won-Pil;Chang, Soon-Heung
    • Nuclear Engineering and Technology
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    • v.29 no.4
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    • pp.348-359
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    • 1997
  • This paper reviews cooling aspects of the diverter system in Tokamak fusion devices with primary emphasis on the critical heat flux (CHF) issues for oater-cooled designs. General characteristics of four (4) coolant options for diverter cooling gases, oater, liquid metal, and organic liquid - are discussed first, focusing on the comparison of advantages and disadvantages of those options. Then results of recent studies on the high-heat-flux CHF of water at subcooled high-velocity conditions are reviewed to provide a general idea on the feasibility of the water-cooled diverter concept for future Tokamak fusion reactors. Water is assessed to be the most viable and practical coolant option for diverters of future experimental Tokamaks.

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Critical Heat Flux under Forced and Natural Circulations of Water at Low-Pressure, Low-Flow Conditions

  • Kim, Yun-Il;Baek, Won-Pil;Chang, Soon-Heung
    • Proceedings of the Korean Nuclear Society Conference
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    • 1995.10a
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    • pp.315-320
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    • 1995
  • The CHF phenomenon has been investigated for water flow under forced and natural circulation modes with vertical round tubes at low pressure and low flow condition. Experiments have been performed by using three different test sections for mass fluxes below 400 kg/㎡s under near atmospheric pressure. The experimental data for forced and natural circulation are compared with each other. To predict the flow rate at the two-phase region our test condition has been analyzed by RELAP5/MOD3 because the local two-phase condition inside the stainless steel tube cannot be directly measured. To predict the CHF with accuracy we have to consider the parameters at the single-phase region as well as the flow behavior at the two-phase region.

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Development and Application of a System Thinking-Based Approach with the Use of a Patient Simulator in Nursing Education : Focus on Congestive Heart Failure (시스템 사고기반 울혈성 심부전 간호교육 시뮬레이션 프로그램 개발 및 적용)

  • Kim, Hyeon-Young;Yun, Eun Kyoung
    • Korean System Dynamics Review
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    • v.15 no.4
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    • pp.61-84
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    • 2014
  • This study aims to explore the development and application of a simulated skills package designed to improve nursing students' knowledge integration and their system thinking(ST) skills about congestive heart failure(CHF) and to identify the change in students' ST levels using a ST-based learning approach. A simulated learning support package was developed by nurse educators and ST experts. The developed program was implemented with 35 third-year nursing students from S university in Seoul. The subjects improved their ST skills regarding CHF after intervention. Mean test scores for students completing the program were significantly higher than pre-intervention scores, including measures of direction of causality, polarity of causal relationship, feedback loop, polarity of feedback loop (reinforcing, balancing) and time delay (t=2.26~6.53, p=.030~p<.001). It is suggested that more educational programs be developed on various topics in order for nursing students to improve their ST skills as well as knowledge integration in clinical nursing practicum packages.

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Surface Property of PET Fabric Treated with $CF_4$ Plasma and $C_2F_6$ Plasma (플루오르 화합물을 플라즈마 처리한 PET 직물의 표면특성)

  • 김태년;모상영
    • Textile Coloration and Finishing
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    • v.11 no.1
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    • pp.25-33
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    • 1999
  • PET fabric was grafted with $CF_4$ or $C_2F_6$ plasmas generated by glow discharge. The water repellency of plasma-treated fabrics were evaluated with contact angle meter. The change in surface morphologies was observed by SEM, and the change of surface chemical characteristics were analyzed by FT-IR, ESCA and microchemical analysis technique. The results obtained are as follows : 1) The contact angle of plasma-treated fabric was over $150^\circ{C}$. 2) It was observed by SEM that the surface of treated substrate was over coated with thin film formed by the fluorocarbon plasma treatment. 3) According to ESCA analysis, there were prevailing -CHF-, $-CF_2$- and a little $-CF_3$ components on fluorocarbon plasma treated substrate. -CHF- and $-CF_2$- components were reduced by washing, and $-CF_2$- component was recovered by heat treatment. 4) In consideration of quantitative analysis of fluorine and F/C ratio by ESCA, we found that fluorination reached to the inner of substrate.

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PERFORMANCE EVALUATION OF NEW SPACER GRID SHAPES FOR PWRS

  • Song, Kee-Nam;Lee, Soo-Bum;Lee, Sang-Hoon
    • Nuclear Engineering and Technology
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    • v.39 no.6
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    • pp.737-746
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    • 2007
  • A spacer grid, which is one of the most important structural components in a PWR fuel assembly, supports its fuel rods laterally and vertically. Based on in-house design experience, scrutiny of the design features of advanced nuclear fuels and the patents of other spacer grids, KAERI has devised its own spacer grid shapes and acquired patents. In this study, a performance evaluation of KAERI's spacer grid shapes was carried out from mechanical/structural and thermohydraulic view points. A comparative performance evaluation of commercial spacer grid shapes was also carried out. The comparisons addressed the spring characteristics, fuel rod vibration characteristics, fretting wear resistance, impact strength characteristics, CHF enhancement, and the pressure drop level of the spacer grid shapes. The results show that the performances of KAERI's spacer grid shapes are as good as or better than those of the commercial spacer grid shapes.

Characterization of Surface Damage and Contamination of Si Using Cylindrial Magnetron Reactive Ion Etching

  • Young, Yeom-Geun
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.482-496
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    • 1993
  • Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

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Reactive Ion Etching of a-Si for high yield and low process cost

  • Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.5 no.3
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    • pp.215-218
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    • 2007
  • In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

Counter-Current Flow Limit in Narrow Gap (간극에서의 역방향 유동 제한 현상 연구)

  • Kim, Yong-Hoon;Suh, Kune-Y.
    • Proceedings of the KIEE Conference
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    • 1998.11b
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    • pp.706-712
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    • 1998
  • Previous counter-current flow limitation (CCFL) and critical heat flux (CHF) studies included investigations on the inlet entrance, inclined channel and gap effects for the most part. In this study, the local CHF correlation was presented to be used in the numerical analysis for the 3 dimensional hemispherical geometry. Also, first-principle analyses were performed to determine the maximum heat removal capability from the debris through the gap that may be formed during a core melt accident. The maximum heat removal capability by gap cooling can be applied in quantitatively assessing the severe accident management measures.

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Neural Network Models of Oxide Film Etch Process for Via Contact Formation (Via Contact 형성을 위한 산화막 식각공정의 신경망 모델)

  • 박종문;권성구;박건식;유성욱;배윤구;김병환;권광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.1
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    • pp.7-14
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    • 2002
  • In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

Reactive Ion Etching of Amorphous Semiconductor and Insulator (비정질 반도체 및 절연체의 Reactive Ion Etching)

  • Hur, Chang-Wu;Lee, Kyu-Chung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.985-989
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    • 2005
  • 본 논문에서는 비정질 반도체 및 절연체의 etching을 RIE를 사용하여 etching 조건을 결정하는 요인(chamber pressure, gas flow rate, rf power, 온도 등)들을 변화시켜 실험하였고, gas는 비정질 실리콘 박막의 reactive ion etching에 주로 사용되는 $CF_4,\; CF_4+O_2,\;CCl_2F_2,\;CHF_3\;gas$ 등을 사용하였다. 여기서 실리콘 박막의 식각은 $CF_4,\;CCl_2F_2,\;gas$를 그리고 insulator 막인 SiNx 박막의 식각은 $CF_4+O_2,\;CHF_3\;gas$를 사용하였다. 특히 $CCl_2F_2$ gas는 insulator 막인 SiNx 박막과의 식각 selectivity가 6:1로서 우수하기 때문이다. 정확한 control에 의해 높은 수율 (Yield) 을 얻을 수 있어 cost를 절감할 수 있다.

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