• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.101-107
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• 2013

Cerium compounds such as Cerium hydroxide ($Ce(OH)_3$), Cerium chloride ($CeCl_3{\cdot}nH_2O$), Cerium carbonate hydrate ($Ce_2(CO_3)_3{\cdot}8H_2O$), Cerium oxide ($CeO_2$) were synthesized using recycled Ce precursor. Cerium(IV) oxide of nanoparticles were obtained by Ultra-sonication. Cerium-sodium- sulfate compound was synthesized through acid-leaching and addition of sodium sulfate from 99 wt% purity of Ce precursor as a starting material that was recycled from the waste polishing slurry. Moreover Cerium hydroxide was obtained from Cerium-sodium-sulfate compound by adding to sodium hydroxide solution. Then Cerium chloride was synthesized by adding of hydrochloric acid to Cerium hydroxide. Needle-shaped Cerium carbonate hydrate was synthesized in the continuous process and Cerium(IV) oxide with 30~40 nm size was subsequently obtained by the calcinations and dispersion.

• Bulletin of the Korean Chemical Society
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• v.27 no.12
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• pp.1989-1996
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• 2006

The $NiSO_4/CeO_2-ZrO_2 $catalysts containing different nickel sulfate and $CeO_2$ contents were prepared by the impregnation method, where support, $CeO_2-ZrO_2$was prepared by the coprecipitation method using a mixed aqueous solution of zirconium oxychloride and cerium nitrate solution followed by adding an aqueous ammonia solution. No diffraction line of nickel sulfate was observed up to 20 wt %, indicating good dispersion of nickel sulfate on the surface of $CeO_2-ZrO_2$. The addition of nickel sulfate (or $CeO_2$) to $ZrO_2$ shifted the phase transition of $ZrO_2$ from amorphous to tetragonal to higher temperatures because of the interaction between nickel sulfate (or $CeO_2$) and $ZrO_2$. A catalyst (10-$NiSO_4/1-CeO_2-ZrO_2$) containing 10 wt % $NiSO_4$ and 1 mole % $CeO_2$, and calcined at $600{^{\circ}C}$ exhibited a maximum catalytic activity for ethylene dimerization. The catalytic activities were correlated with the acidity of catalysts measured by the ammonia chemisorption method. The role of $CeO_2$was to form a thermally stable solid solution with zirconia and consequently to give high surface area, thermal stability and acidity of the sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.49-56
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• 2006

In this paper, to overcome the effect of nonlinear power amplifier, CE-CPSK(Constant Envelope Continuous Phase Shift Keying)modulation method which has the constant envelope and continuous phase characteristics is proposed. The code acquisition performances of the CE-CPSK modulated system and BPSK system are analyzed. And the performance is evaluated in terms of mean acquisition time and detection probability with the output backoff of the amplifier in multiuser environment. Results performed in a channel having a high degree of AM nonlinearity(AM-to-AM conversion), have shown that the CE-CPSK signal, when passed through class C-nonlinear Amplifier, has a spectrum with greatly reduced sidelobes compared to the conventional BPSK signal. The code acquisition performance of a CE-CPSK modulation system is better than that of BPSK system with nonlinear amplified multiuser environments.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.55-61
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• 1990

Effect of Al2O3 addition on the mechanical properties and microstructure of Ce-TZP were studied. 12, 14, 16Ce-TZP containing 0-40wt% Al2O3 were prepared by sintering at 155$0^{\circ}C$ for 2h. in air. Density, linear shrinkage, bending strength, Vickers hardness, microstructuer and the amount of stress induced phase transformation were examined. Vickers hardness increased linearly with increasing amounts of Al2O3. The amount of transformation and fracture toughness decreased linearly with increasing amount of Al2O3. Linear shrinkage and relative density decreased with increasing Al2O3 content in all composition of Ce-TZP. Grain growth of Ce-TZP was inhibited by Al2O3 dispersion and fracture mode of Ce-TZP/Al2O3 composites transformed from intergranular to transgranular fracture as the amount of Al2O3 increased. TEM observation revealed that Al2O3 particles were located mainly at grain boundaries of ZrO2.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.78-82
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• 1998

The oxygen nonstoichiometry (x) of UO$_{2+x}$ and $(Ce_yU_{1-y})O_{2+x}$ (y=0.05, 0.25) has been measured as a function of oxygen activity (a02) at 100$0^{\circ}C$ by a solid state coulometri titration technique. The results for UO$_{2+x}$ are in a good agreement with literature data and the ao2-dependence of the nonstoichimetry has been well explained with (2:2:2) cluster model. The equilibrium oxygen activity of $(Ce_yU_{1-y})O_{2+x}$ increases with Ce-content (y) for given nonstoichiometry (x), which is ascribed to the fact that Ce is present as Ce$^{3+}\; and\; Ce^{4+}$, and, therefore, the addition of Ce reduces the oxidation capacity of UO$_{2+x}$. From the oxygen activity dependence of x in $(Ce_yU_{1-y})O_{2+x}$ the defect structure of $(Ce_yU_{1-y})O_{2+x}$ is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1177-1185
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• 1996

Y-TZP/Ce-TZP ceramics having relative sintered densities of>95% average grain sizes of 0.36$\mu\textrm{m}$ microhar-dness of 1150 kg/mm2 fracture strength of 390-830 MPa and toughness of 6.4-10.2 MPa$.$mm1/2 were prepared by conventional sintering of 3 mol% Y2O3-ZrO2 and 12 mol% CeO2-ZrO2 powders at 1400 and 1500$^{\circ}C$ The average grain sizes of Y-TZP/Ce-TZP ceramics were mainly governed by those of Ce-TZP. White increasing Ce-TZP content toughness increased while microhardness and fracture strength decreased. With comparing microhardness and toughness fracture strength was more sensitive on not only grain size but also other factors such as microstructural and compositional variations. The densification of Y-TZP/Ce-TZP cermaics was not greatly affected by composition and soaking time at temperature over 1400$^{\circ}C$ With increasing CE-TZP content the stability of t-ZrO2 decreased under thermal aging in air whereas increased in hydrothermal atmosphere and aqueous solution.