• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• Journal of Acupuncture Research
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• v.17 no.2
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• pp.69-84
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• 2000

We have known that $\ll$Zhen Jiu Da Cheng, 鍼灸大成$\gg$ had been written by Yang Ji Zhou(楊繼洲) in Ming(明) dynasty. And it had been the only textbook of acupuncture & moxibustion for over 300years. This book is composed of 10 chapters dealing almost all the medical theories of that times. This book is so enormous that it is hard to understand essential ideas of the author. But, Yang Ji Zhou revealed his ideas and medical theories in some parts of this book. This part is named that composed of 4 small subjects. These are , , and In this study, I analyze the relation of $\ll$Zhen Jiu Da Cheng, 鍼灸大成$\gg$ and $\ll$Wei Sheng Zhen Jiu Xuan Ji Bi Yao, 衛生鍼灸玄機秘要$\gg$ and then I study further by comparing with other parts of $\ll$Zhen Jiu Da Cheng, 鍼灸大成$\gg$ and other important oriental medical textbooks.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1141-1146
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• 2012

Ce-doped $Y_3Al_5O_{12}$ (YAG:Ce) phosphor powder was prepared using a ${NO_3}^-$-malonic acid-$NH_4NO_3-NH_3{\cdot}H_2O$ system. The YAG:Ce precursor was ignited at $240^{\circ}C$ and the resulting powder contained YAG:Ce crystallites (42%) - active in the visible region at 460 nm - amorphous particles (53%) - inactive at visible wavelengths - and less than 3% oxide (3%) crystallite impurities. The impurities transformed to acitive YAG:Ce crystallites at above $800^{\circ}C$. At above $1000^{\circ}C$, the amorphous phase became YAG phase and isolated $Ce_2O$ crystallites emerged. The powder particles comprised < $4{\mu}m$ secondary aggregates of 20 nm primary particles. The thermal dusting of the secondary particles coincided with the aggregation of the secondary particles at above $900^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.104-104
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• 1999

Cerium dioxide 박막의 포토루미네슨에 관해서는 Cerium 4f band에서 oxygen 2p band로의 transition에 의한 발광(400nm) 현상이 보고되었다. 또한 Indium Oxide 박막의 발광(637nm0 현상이 보고되었다. 본 연구에서는 3족인 Indium을 Si/In/CeO2/Si 구조와 CeO2/Si 구조에 도핑하여 포토루미네슨스 현상을 관찰하였다. E-beam evaporator를 사용하여 Silicon(111) 기판에 Cerium dioxcide 박막을 성장시킨 경우의 두가지 시료를 분석하였다. 포토루미네슨스 관찰을 위해서 Ge-Cd laser (325nm)가 사용되었으며 Indium의 도핑양과 분포 상태를 알기 위해 SIMS와 ADP를 이용하여 분석하였다. Indium양에 대한 포토루미네슨스 변화와 열처리 후의 indium의 분포의 변화에 의한 포토루미네슨스 변화를 관찰하였다. 상온에서 In/CeO2/Si 시료와 Si/In/CeO2/Si 시료에 대한 포토루미네슨스 현상을 관찰한 결과 Si/In/CeO2/Si 시료에서만 500nm(2.5eV)에서 발광 현상이 관찰되었다. 도핑된 indium은 ADP에서는 검출되지 않고 SIMS에서만 검출되어 ADP의 detection range(1-0.1%) 이하의 양이 도핑된 것으로 추측된다. 도핑된 Indium의 양이 증가할수록 포토루미네슨스의 Intensity가 증가하였다. 또한 열처리(110$0^{\circ}C$, 1min) 후 포토루미네슨스의 peak위치가 390nm(3.18eV)로 변화하였다. Si/In/CeO2/Si에서 포토루미네슨스 현상이 관측되고 Intensity가 indium의 양에 의존하므로 완전하지 못한 Cerium dioxide의 CeOx 구조와 indium과의 결합이 포토루미네슨스의 원인으로 추측된다. 열처리 후 SIMS의 분석결과 indium의 분포가 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.444-450
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• 1997

기계적합금화 한 AI-Ti합금의 상온 및 고온 인장강도는 25at.% Ti을 Ce으로 치환함에 따라 증가하였다. 그러나 25at.% 이상의 Ce첨가는 합금의 인장강도를 감소시켰다. 이는 Ce이 적은 고용도 효과에 의해 금속간화합물의 초대화를 억제하여 합금의 강도를 증가시키지만 다량 첨가시에는 Ti에 비해 무거운 원자량으로 인해 분산상의 부피분율을 감소시켜 합금의 강도가 오히려 저하시킨 것으로 생각된다. Ce의 첨가는 40$0^{\circ}C$와 51$0^{\circ}C$에서 합금의 열저안정성을 향상시키는 것으로 나타났다. 300-51$0^{\circ}C$ 온도범위에서 측정된 AI-8wt.%(Ti+Ce)합금의 변형에 필요한 활성화에너지는 AI의 자기확산에 필요한 에너지 (142kJ/mode)의 1.3-1.9배로 나타났다. 이로부터 AI-Ti-Ce 합금의 고온 변형은 Orowan기구에 의한 것을 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.300-303
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• 2003

[ $0.91(PSN-PZT)-0.05BF-0.04PNW+0.3wt%MnO_2+0.6wt%CuO+xwt%CeO_2$ ] ceramics were fabricated with the variations of $CeO_2$ addition at the sintering temperature of $950^{\circ}C$ and their microstructure and dielectric and piezoelectric characteristics were investigated. As the amount of $CeO_2$ addition increased, the grain size, density and electromechanical coupling factor(kp) were increased and the mechanical quality factor(Qm) was decreased. At the $0.3wt%CeO_2$, density, grain size and electromechanical factor(kp) showed the maximum value of $7.87g/cm^3$, $3.22{\mu}m$ and 0.5, respectively. However, mechanical quality factor(Qm) showed the minimum value of 807 at the $0.5wt%CeO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.430-433
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• 2001

The 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1300$^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures were coexisted in the 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics. The dielectric constant($\varepsilon$$\sub$r/) was increased with addition of Ce. The temperature coefficient of resonant frequency($\tau$$\sub$f/) was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the 0.96MgTiO$_3$-0.04SrTiO$_3$+0.2Ce ceramics was near zero, where the dielectric constant, quality factor, and $\tau$$\sub$f/ were 20.68, 50, 272 and -0.5pm/$^{\circ}C$, respectively.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.1-13
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• 2016

This review deals with one of the surface modification techniques, chemical conversion coating and particularly cerium-based conversion coatings (CeCC) as a promising substitute for chromium and phosphate conversion coating on magnesium and its alloys. The CeCCs are commonly considered environmentally friendly. The effects of surface preparation, coating thickness, bath composition, and e-paint on the corrosion behavior of CeCCs have been studied on the AZ31 magnesium alloy. This review also correlates the coating microstructural, morphological, and chemical characteristics with the processing parameters and corrosion protection. Results showed that the as-deposited coating system consists of a three layer structure (1) a nanocrystalline MgO transition layer in contact with the Mg substrate, (2) a nanocrystalline CeCC layer, and (3) an outer amorphous CeCC layer. The nanocrystalline CeCC layer thickness is a function of immersion time and cerium salt used. The overall corrosion protection was crucially dependent on the presence of coating defects. The corrosion resistance of AZ31 magnesium alloy was better for thinner CeCCs, which can be explained by the presence of fewer and smaller cracks. On the other hand, maximum corrosion protection was achieved when AZ31 magnesium samples with thin CeCCs are e-painted. The e-paint layer further restricts and hinders the movement of chloride and other aggressive ions present in the environment from reaching the magnesium surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.590-593
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• 1999

$Y_2SiO_5$:Ce was considered as blue phosphor for field emission display because it had an excellent resistance against brightness saturation. But unfortunately It hadn't a sufficient brightness to be applied to FED. In this experiment It-$In_2O_3$, MgO and $SiO_2$ were coated onto $Y_2SiO_5$:Ce phosphor in order to improve the cathodoluminance(CL properties. The coating structures were identified to be the crystalline phases of $In_2O_3$ and MgO respectively. They had fine particle-like shape and were distributed on the surface of $Y_2SiO_5$:Ce phosphor. It was found that the CL efficiency of $Y_2SiO_5$:Ce phosphors were decreased after coatings with In20:j and MgO in voltage range from 500 V to 5 kV. But the brightness of $Y_2SiO_5$:Ce phosphor was increased after coating of 5 0 2 . And also the aging test showed that $In_2O_3$ coating improved the life time of $Y_2SiO_5$:Ce phosphor.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.414-417
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• 2012

The effect of cerium concentration and the addition of $Sb_2O_3$ on the light emission of cerium-contained glass were investigated. The glass matrix composition was $20Y_2O_3-25Al_2O_3-55SiO_2$, the $CeO_2$ concentration ranged from 0.05 to 0.5 mol%, and $Sb_2O_3$ was added at concentrations of 0.02 to 0.1 mol%. The $Ce^{3+}$ and $Ce^{4+}$ absorption bands were observed at approximately 330 nm and 240 nm, respectively. A broad emission band at 400 nm, due to the 4f-5d transition of the $Ce^{3+}$ ion, was observed under illumination by a UV light at 330 nm. The photoluminescence intensity of $Ce^{3+}$ had a maximum value at a $CeO_2$ concentration of 0.1 mol%. Adding $Sb_2O_3$ decreased the $Ce^{4+}$ absorption intensity and enhanced the light emission intensity of $Ce^{3+}$ by about 45%.