• Bulletin of the Korean Chemical Society
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• v.14 no.6
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• pp.700-704
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• 1993

The photocatalytic alanine and hydrogen production reaction were studied by using CdS as a semiconductor photocatalysts. The rate of alanine and hydrogen production depends strongly on the temperature in heat treatment of CdS powder. In particular, the rate of alanine production, which was observed using Pt/CdS(A)-(CdS from Mitsuwa), was increased about six times than that of using Pt/CdS(B)-(CdS from Furruchi) under the same heat treatment condition at 500$^{\circ}$C. And the photocatalytic activity for alanine production using bare CdS(A) or Pt/CdS(A) was almost same with increasing temperature in heat treatment in the range of 100-600$^{\circ}$C. From X-ray diffraction data and photoluminescence spectrum, we conclude that the crystal structure changes of CdS(A) or strong interaction at interface of Pt and CdS contribute to increasing the rate of alanine and hydrogen production reaction.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.219-227
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• 2001

The silver colloidal effects on the excited-state structure and intramolecular charge transfer (ICT) of p-N,N-dimethylaminobenzoic acid (DMABA) in aqueous cyclodextrin (CD) solutions have been investigated by UV-VIS absorption, steady-state and time-resolved fluorescence, and transient Raman spectroscopy. As the concentration of silver colloids increases, the ratio of the ICT emission to the normal emission (Ia /Ib) of DMABA in the aqueous $\alpha-CD$ solutions are greatly decreased while the Ia /Ib values in the aqueous B-CD solutions are significantly enhanced. It is also noteworthy that the ICT emission maxima are red-shifted by 15-40 nm upon addition of silver colloids, implying that DMABA encapsulated in $\alpha-CD$ or B-CD cavity is exposed to more polar environment. The transient resonance Raman spectra of DMABA in silver colloidal solutions demonstrate that DMABA in the excited-state is desorbed from silver colloidal surfaces as demonstrated by the disappearance of νs (CO2-)(1380 cm-1 ) with appearance of ν(C-OH)(1280 cm -1) band, respectively. Thus, in the aqueous B-CD solutions the carboxylic acid group of DMABA in the excited-state can be readily hydrogen-bonded with the secondary hydroxyl group of B-CD while in aqueous and $\alpha-CD$ solutions the carboxylic acid group of DMABA has the hydrogen-bonding interaction with water. Consequently, in the aqueous B-CD solutions the enhancement of the Ia /Ia value arises from the intermolecular hydrogen-bonding interaction between DMABA and the secondary hydroxyl group of B-CD as well as the lower polarity of the rim of the B-CD cavity compared to bulk water. This is also supported by the increase of the association constant for DMABA/ B-CD complex in the presence of silver colloids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.322-327
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• 2006

CdS films have been prepared on polycarbonate, polyethylene terephthalate, and Coming 7059 substrates by r.f magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated. The XRD measurements revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase, regardless of substrate types. As the sputter power was increased from 75 to 150 Watt, the structure of CdS films was converted from the mixed of hexagonal and cubic phase to hexagonal phase. The morphology of CdS films is found to be continuous and dense. Also, the grain of CdS films is larger with increasing the sputter power. The average transmittance exceeded 80 % in the visible spectrum for all films and decreases slightly with the sputter power.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1436-1438
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• 1997

In this paper, CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, and The properties were investigated in detail. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And Ammonium acetate was used as the buffer solution. Also Ammonia was used for controlling pH concentration. The reaction velocity was increased with increasing reaction temperature and decreasing pH concentration. The crystal structure of CdS films grown with various pH concentration had the hexagonal structure with (002) plane peak. In the range of pH $9{\sim}9.5$, the intensity of the peak was highest, and as increasing pH concentration, decreased the intensity of the peak except pH12.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.296-302
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• 1999

$CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

• Science of Emotion and Sensibility
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• v.21 no.4
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• pp.55-62
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• 2018

The two main requirements of wearable optical fiber fabrics are that they must presuppose a high degree of flexibility and they must maintain the luminance effect in both flat and bent conformations. Therefore, woven optical fiber fabrics that satisfy the above conditions were developed by both weaving and by using computer embroidery. First, we measured the brightness of the wearable optical fiber fabric in the flat state at a total of 10 measurement points at intervals of 1 cm. Second, the wearable optical fiber fabric was placed horizontally on the forearm, where three-dimensional bending occurs, and the luminance values were recorded at the same 10 measurement points. For the woven fabric in the flat state, the maximum, minimum, average, and standard deviation luminance values were $5.23cd/m^2$, $2.74cd/m^2$, $3.56cd/m^2$, and $1.11cd/m^2$, respectively. The corresponding luminance values from the bent forearm were $7.92cd/m^2$ (maximum), $2.37cd/m^2$ (minimum), $4.42cd/m^2$ (average), and $2.16cd/m^2$ (standard deviation). In the case of the computer-embroidered fabric, the maximum, minimum, average, and standard deviation luminance values in the flat state were $7.56cd/m^2$, $3.84cd/m^2$, $5.13cd/m^2$, and $1.04cd/m^2$, respectively, and in the bent forearm state were $9.6cd/m^2$, $3.63cd/m^2$, $6.13cd/m^2$, and $2.26cd/m^2$, respectively. Therefore, the computer-embroidered fabric exhibited a higher luminous effect than the woven fabric because the detailed structure reduced light-loss due to the backside fabric. In both types of wearable optical fiber fabric the luminance at the forearm was 124% and 119%, respectively, and the light emitting effect of the optical fiber fabric was maintained even when bent by the human body. This is consistent with the principle of Huygens, which defines the wave theory of light, and also the Huygens-Fresnel-Kirchhoff principle, which states that the intensity of light increases according to the magnitude of the angle of propagation of the light wavefront (${\theta}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.56-59
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• 2004

HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2547-2552
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• 2010

CdS nano-particulate films were prepared at the air/water interface under Langmuir monolayers of arachidic acid (AA) via interfacial reaction between $Cd^{2+}$ ions in the subphase and $H_2S$ molecules in the gaseous phase. The films were made up of fine CdS nanoparticles with hexagonal Wurtzite crystal structure after reaction. It was revealed that the formation of CdS nano-particulate films depends largely on the experimental conditions. When the films were ripened at room temperature or an increased temperature ($60^{\circ}C$) for one day, numerous holes were appeared due to the dissolution of smaller nanoparticles and the growth of bigger nanoparticles with an improved crystallinity. When the films were ripened further, CdS rodlike nanoparticles with cubic zinc blende crystal structure appeared due to the re-nucleation and growth of CdS nanoparticles at the stacking faults and defect structures of the hexagonal CdS grains. These structures were characterized by transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and X-ray diffraction (XRD). These results declare that CdS semiconductor nanoparticles formed at the air/water interface change their morphologies and crystal structures during the ripening process due to dissolution and recrystallization of the particles.