• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.37-40
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• 2004

CdTe nanoparticles were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized CdTe nanoparticles revealed the strong exitonic peak in the visible region. Photocurrent of CdTe nanoparticles were observed in the structure of Al/CdTe/ITO that was fabricated by spin coating of CdTe nanoparticles. The wavelength dependence of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. This study suggests that CdTe nanoparticles are very prospective materials for optoelectronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집
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• pp.1-6
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• 2004

In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1，and 14975cm-1 at 11.3K.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.397-400
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• 2014

Size- and shape-controlled monodisperse wurtzite structured CdS nanorods have been successfully synthesized using a facile solution-based colloidal method. Depending on the control of injection/growth temperatures and the variation of Cd-to-S molar ratios, the morphology of the CdS nanocrystals (NCs) can be adjusted into bullet-like, rod-like, and dot-like shapes. X-ray diffraction (XRD), transition electron microscopy (TEM), and absorption spectroscopy were used to characterize the structure, morphology, and optical properties of as-synthesized CdS NCs. It was found that uniform CdS nanorods could be successfully synthesized when the injection and growth temperatures were very high (> $360^{\circ}C$). The aspect ratios of different shaped (bullet-like or rod-like) CdS NCs could be controlled by simply adjusting the molar ratios between Cd and S.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1418-1420
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• 1996

In this paper, structural properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar ceIl prepared by thermal vacuum evaporation were studied. Structural variation with $CdCl_2/heat$ treatment are assessed using x-ray diffraction and scanning electron microscopy. The crystal structure of CdTe films was zincblend type with preferential orientation of the (111) plane parallel to the substrate. The $CdCl_2$ treatment appears to increase the grain size of polycrystalline CdTe thin film. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment with $CdCl_2$. The conversion efficiency, however, decreased when heat treatment temperature was too high.

• 한국결정학회지
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• 제2권1호
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• pp.17-22
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• 1991

Cd2+ 이온으로 이온 교환된 제올라이트 A를 탈 수한 후 C2H2 기체를 흡착한 결정구조를 단결정 X-선 회절법으로 입방공간군 Pm3m을 사용하여 해석하였다. (a=12.202(3)남 이고 Z:1 임). 이 결정은 723 K에서 2.67×10-4 Pa의 진공하에 서 2일간 탈수시킨 뒤 1.60×104 Pa의 C2H2 기체를 298 K에서 흡착시켜 만들었다. 단위 세포당 6개의 Cd2+ 이온은 모두 골조의 결정학적으로 서로 다른 2개의 3회 회전축상 6 산 소고리 위치에 위치한다. 즉 이들 Cd2+ 이온중 2개 는 3개의 0(3) 산소로 이루어진 (111) 평면에서 0. 694A 만큼 sodalite 동공내로 들어간 위치에 위치하 였고 나머지 4개의 Cd2+ 이온은 0(3)의 (111) 평면에서 큰 동공으로 0.586A.들어가 있었다. 이 4개의 Cd2+ 이온은 거의 정사면체형으로서, 3개의 골조 산소로부터 2.220(9)남 그리고 윤Ha 분자(여기서 는 한자리 배위자로 간주)의 탄소로부터는 2.74(7) A 떨어진 위치에 있다. I>3c (I)인 292개의 회절점으로 Rl=0.093, R2 =0.105까지 정밀화시켰다.

• 한국결정학회지
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• 제4권2호
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• pp.54-62
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• 1993

Cd2+ 이온으로 이온교환된 제올라이트 A를 650℃에서 2 ×10-6 T orr의 진공하에서 탈수한 구조 (a:l2.189(2)A)와 이 결정에 요오드가 흡착된 구조 (a:l2.168(2) A)를 21℃에서 입방공간군 Pm3m를 사용하여 단결정 X-선회절법으로 해석하고 정밀화하였다. 탈수한 가In-A의 구조 는 Full-rmoix 최소자승법 정밀화 계산에서 I > 3σ(I)인 186개의 독립반사를 사용하여 최종오차인자를 Rl:0.057, Ra:0.003 까지 정밀화 계산하였고, 이 결정을 요오드로 흡착시킨 구조는 181 개의 독립 반사를 사용하려 Rl = 0.082, R2 : 0.085가지 정밀화시켰다. 두 결정에서 단위세포당 6개의 Cd2+ 이온은 서로 다른 2개의 3회 회전축상에 위치 하고 있었다. 요오드가 흡착된 구조에서 4개의 Cd2+ 이온 은 0(3)의 (111) 평면에서 큰 동공쪽으로 약 0.68(1) A 들어간 I3- 이온이 결합하고 있고 나머지 2개의 Cd2+ 이온은 0(3)의 (111) 평면에서 소다라이트 동공 깊숙히 약 0.68(1) A 들어간 자리에 위치 하고 있다. 단위세포당 약 4개의 I이온이 큰 동공내에 흡착되었다. 각각의 I-는 6-링 Cd2+와 골조의 8-링 산소에 다리를 놓고 있으며 0(1)-I(1)-I(2) 각도는 172(1)˚로써 거의 선형이고 약한 전 하이동 착물을 골조의 8-링 산소와 이루고 있다. 큰 동공 내에 존재하는 I이온은 부분적으로 탈수된 효In-A에서 요오드 증기와 물분자가 반응하여 H+이온과 I-이온이 생성된 후 다시 I이온과 l2 분자와 반응하여 생성되었을 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.857-860
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• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

• 분석과학
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• 제21권6호
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• pp.562-568
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• 2008

A novel two-dimensional cadmium(II)-nickel(II) bimetallic host clathrate, $[Cd{NH_2CH_2CH_2OH}_2Ni(CN)_4]{\cdot}3C_6H_5NH_2{\cdot}H_2O$, 1, has been synthesized and structurally characterized by X-ray single crystallographic method. The clathrate 1 crystallizes in the monoclinic system, space group $P2_1/c$ with a = 14.370(3), b = 7.728(1), c = 28.172(4) ${\AA}$, ${\beta}=97.58(1)^{\circ}$, V = 3101.1(9) ${\AA}^3$, Z = 4. The host framework of the clathrate 1 is built of the cyanide bridges between octahedral Cd(II) atom and square planar Ni(II) atom. The octahedral Cd atoms ligated by two 2-aminoethanol molecules and four cyanide ligands bridged with square planar Ni atoms. The Ni atoms bridges to four Cd atoms via cyanides is made up of puckered quadrangles of composition $\{CdNi(CN)_2\}_2$, all edges are shared. This cyanide bridges form an infinite two-dimensional host networks stacking along b axis. 2-Aminoethanol ligands bond to Cd atom through N atom as a monodentate ligand in the axial position and four cyanides take an equatorial plane with all in trans-configurations. The aniline guest molecules and water molecules are located in between the host layer sheets, respectively.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.29-34
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• 2005

Tungsten oxide($WO_{3}$) is suitable to materials for photochromic window in the visible region. The resistivities of CdS, $WO_{3}$, and $WO_{3}$/CdS films prepared by thermal evaporation method were $4.61\times 10\^{3}$, $7.59\times10^{3}$, and $6.29\times10^{3}$ $\omega$ cm. And x-ray diffraction patterns of CdS, $WO_{3}$/CdS films showed a preferred orientation of hexagonal(002), and the monoclinic(020) structure, respectively. The optical transmission were measured that the cut-on wavelength were 510nm, 380nm for CdS and $WO_{3}$ films respectively, and the transmission spectrum of $WO_{3}$/CdS was shifted into the visible region. Photoluminescence(PL) spectra showed the two peaks at 2.8 eV and 3.2 eV for the as-grown sample($WO_{3}$/CdS ($500{\AA}$), but the other sample($WO_{3}$/CdS ($1000{\AA}$)) had a peak energy value of 2.8 eV. The photochromism of $WO_{3}$/CdS films showed that the excitation of electron-hole pairs and subsequent coloration is shifted into visible-light range. And the spectral behavior of coloration turned out to be proportional to the excited electron-hole pairs creation rate of CdS film. This result is interpreted in terms of charge carrier injection from the CdS-layer into the $WO_{3}$ films. We found a value of about 2.8 eV of $WO_{3}$/CdS film which is somewhat higher than peak energy of 2.54 eV using CBD prepared by Bechinger et. al.