• Journal of the Korean Vacuum Society
• /
• v.18 no.6
• /
• pp.459-467
• /
• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• BMB Reports
• /
• v.37 no.6
• /
• pp.657-662
• /
• 2004

Oligoribonucleotides containing 8-oxo-7,8-dihydroguanosine (8-oxoG) and 8-oxo-7,8-dihydro-2'-O-methylguanosine (8-oxoG-Me) were synthesized. The base pairing properties of 8-oxoG and 8-oxoG-Me in oligoribonucleotide in cDNA synthesis by reverse transcriptases were studied. dCMP was preferentially incorporated into the site opposite 8-oxoG or 8-oxoG-Me than into other dNMPs. TMP and dCMP were inserted preferentially into sites opposite 8-oxoG or 8-oxoG by reverse transcriptases. HIV-RT did not incorporate TMP, but RAV2-RT incorporated 50% more TMP than dCMP into the site opposite 8-oxoG. In the site opposite 8-oxoG-Me TMP was substantially incorporated by HIV-RT or RAV2-RT. Thermodynamic analysis of the DNA. RNA heteroduplex containing 8-oxoG revealed that 8-oxoG and 8-oxoG-Me formed base pairs with cytidine and thymidine with similar stability. The thermodynamic parameter (${\Delta}G^{\circ}$) demonstrated that the formation of duplexes between 8-oxoG or 8-oxoG-Me and cytidine or thymidine is more thermodynamically favorable than with adenosine and guanosine. However, differences in the melting temperature and ${\Delta}G^{\circ}$'s of 8-oxoG/dC and 8-oxoG/T were much smaller than between G/dC and G/T. CD spectra showed that DNA . RNA containing 8-oxoG or 8-oxoG-Me duplexes showed similarities between the A-type RNA and B-type DNA conformations.

• Journal of the Korean Chemical Society
• /
• v.50 no.2
• /
• pp.99-106
• /
• 2006

The electronic absorption spectra of [3-(2-thenoyl) 3-(p-NO2-phenylhydrazone) ethyl pyruvate] (I), p-Br (II) and p-CH3 (III) were studied in ethanol and the spectra comprise four absorption bands which assigned to the corresponding electronic transition. The pK values of these compounds have been determined spectrophotometrically and pH-metrically, the results shown that the interval range for color change of compound (I) is (8-10) similar to that of phenolphethalin indicator, indicating that this compound can be used as acid-base indicator. The successive stability constants of the compounds under study with some transition elements (Mn(II), Co(II), Ni(II), Cu(II), Zn(II), Cd(II), UO2(II), La(III) and Zr(IV) have been determined pH- metrically. Stoichiometric complexes with ratios 1:1 and 1:2 (M: L) were formed for all metals. The pK of the three derivatives and the values of the stability constant (logK) of the complexes have the order; III > II > I. Also conductometric titrations have been carried out and the results show that this titration can be used for determination of both the metal ion and the ligand concentrations by each others.

• Archives of Pharmacal Research
• /
• v.18 no.2
• /
• pp.84-89
• /
• 1995

The complexation and physical characteristics of egg phosphatidylcholine (PC) liposome containing amphotericin B(AmB) were investigated through circular dichrosim(CD) spectra, the size distribution, the turbidity change, and the calcein release. CD spectra of AmB-containing egg PC mxture exhibited a positive peak around 330 nm indicative of complexation of AmB and four negative peaks. The positive peak increased up to $2.2{\;}millidegree/{\mu}g$ AmB as AmB contents increased up to 12% (w/w), suggesting that AmB-phospholipid complexation was promoted by the antibiotics. The effective diameter of liposomesa by dynamic light scattering decreased from 450 nm to 220 nm as the amount of AmB in liposomes increased from o to 30% (w/w). The complexation may be responsible for the reduction in size. On the other hand, at around 1 mN deoxycholate (DOC), the reltive turbidities of 5 and 10% (w/w) AmB-containing liposome suspension were less than 1 probably due to the soblubilization of the complex, while those of pure PC liposome suspension were larger than 1 at the same concentration. Deoxycholate-induced release of liposomes, indicating the intercalation of the drug into the bilayers. Therefore, it is concluded that in AmB/eggPC/water system, AmB-phospholipid complexcoexists with AmB-containing liposomes.

• Journal of Soil and Groundwater Environment
• /
• v.7 no.3
• /
• pp.71-77
• /
• 2002

This research was carried out from 2001. 4 until 2001. 5 in order to examine the level of soil contamination in the vicinity of Nanjido. The sampling was done at near the Nanjido soil. At the each sampling site we did the sampling at different depth- surface(0~15cm deep), 1m deep, 2m deep, 3m deep. The contamination of Cd, Cu, Pb, As, $Cr^{+6}$, and Hg were tasted and analysed by spectra AA. The examination showed that the average concentration level of the entire sampled soil was Cd, 0.229mg/kg, Cu 8.349mg/kg, Pb : 11.083mg/kg, As : 0.298mg/kg, $Cr^{+6}$ : 0.124mg/kg, and Hg : 0.134mg/kg. The concentration level of at the depth of 0-l5cm, came out to be Cd : 0.305mg/kg, Cu : 8.464mg/kg, Pb : 11 383mg/kg, As : 0.128mg/kg, $Cr^{+6}$ : 0.153mg/kg, and Hg : 0.092mg/kg. It shows that in the cases of Cd and C $r^{+6}$ the average concentration level of the whole sampled soil was about 80% of that of 0-l5cm depth. And as for Hg and As. the average concentration level of the entire sampled soil came out to be approximately twice as high as the sample soil from the depth surface, As for Cu and Pb, there was not much difference between the entire samples average concentration level and the concentration level of surface. It was hard to find much relationship between the depth of each site where sampling was done and the level of concentration, the concentration level of Pb and Cu at the sampling site C and E was quite high, which suggests that it has been affected by the polluted the hyang-dong stream and fill random up waste.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.1
• /
• pp.29-35
• /
• 2000

Luminescent characteristics of SrS:Cu,X TFeL devices fabricated by electron-beam deposition system were studied. The SrS powders were used as the host materials and Cu, $CuF_2,\;Cu_2S$ or CuCl powders were added as the luminescent center. The emission spectra of the SrS:Cu,X TFEL devices strongly depended on coactivators. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:$Cu_2S$ TFEL device were 1443 cd/$m^2$ and 2.44 lm/w, respectively. Green color was observed from this TFEL device. The luminous efficiency of SrS:$Cu_2S$ TFEL device was higher than that of ZnS:Tb TFEL device, and it also could be good green phosphors for TFEL devices. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:CuCl TFEL device were 262 cd/$m^2$ and 0.26 lm/w, respectively. Blue color was emitted from this TFEL device.

• Korean Journal of Materials Research
• /
• v.9 no.2
• /
• pp.173-180
• /
• 1999

Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.167-168
• /
• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.11
• /
• pp.3241-3246
• /
• 2010

NHERF ($Na^+/H^+$ exchanger regulatory factor) and E3KARP (NHE3 kinase A regulatory protein) play important roles in membrane targeting, trafficking and sorting of ion channels, transmembrane receptors and signaling proteins in many tissues. Each of these proteins contains two PDZ (PSD-95/Dlg-1/ZO-1) domains, which mediate the assembly of transmembrane and cytosolic proteins into functional signal transduction complexes. The interaction between NHERF and E3KARP was investigated by surface plasmon resonance spectroscopy (BIAcore), fluorescence measurement, His-tagged pull-down experiment, and size-exclusion column (SEC) chromatography. BIAcore experiments revealed that NHERF bound to E3KARP with an apparent $K_D$ of 7 nM. Fluorescence emission spectra of the NHERF-E3KARP complex suggested that the tight interaction between these proteins was accompanied by significant conformational changes in one or both. The CD spectra of NHERF and E3KARP show that the conformational changes of these proteins were dependent on pH and temperature. These results implicate that the NHERF-E3KARP complex allows intracellular signaling complexes to form through PDZ-PDZ interactions.

• Korean Journal of Materials Research
• /
• v.19 no.6
• /
• pp.313-318
• /
• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.