• 한국세라믹학회지
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• 제48권6호
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• pp.531-536
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• 2011

Al doped $LiMn_2O_4$ ($LiMn_2O_4:Al$) synthesized by several Al doping process and Solid State method. The Al contents in $Mn_{1-x}Al_xO_2$ for $LiMn_2O_4:Al$ were analyzed 1.7 wt% by EDS. The $LiMn_2O_4:Al$ confirmed cubic spinel structure and approximately 5 ${\mu}m$ particles regardless of three kinds of doping process by solid state method. In the result of electrochemical performances, initial discharge capacity had 115 mAh/g in case of $LiMn_2O_4$ and 111 mAh/g of $LiMn_2O_4:Al$ after 100th cycle at room temperature. But the capacity retention results showed that $LiMn_2O_4$ and $LiMn_2O_4:Al$ were 44% and 69% respectively in the 100th cycle at 60$^{\circ}C$. Therefore we are confirmed that $LiMn_2O_4:Al$ increased the capacity retention about 25% than $LiMn_2O_4$, thus the effect of Al dopping on $LiMn_2O_4$ capacity retention.

• 한국세라믹학회지
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• 제45권3호
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• pp.167-171
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• 2008

Zirconium-doped $Li_{1.1}Co_{1-x}Zr_xO_2(0{\leq}x{\leq}0.05)$ powders as cathode materials for lithium ion batteries were synthesized using an ultrasonic spray pyrolysis method. Cyclic voltammetry and cyclic stability tests were performed, and the changes of microstructure were observed. The solubility limit of zirconium into $Li_{1.1}CoO_2$ was less than 5 mol%, and monoclinic $Li_2ZrO_3$ phase was formed above the limit. The Zr-doping suppressed the grain growth and increased the lattice parameters of the hexagonal $LiCoO_2$ phase. The Zr-dopiong of 1mol% resulted in the best cyclic performance in the range of $3.0{\sim}4.3V$ at 1C rate (140 mA/g); the initial discharge capacity decreased from 158 mAh/g to 60 mAh/g in the undoped powder, while from 154 mAh/g to 135 mAh/g in the Zr-doped powder of 1 mol% after 30 cycles. The excellent cycle stability of Zr-doped powder was due to the low polarization during chargedischarge processes which resulted from the delayed collapse of the crystal structure of the active materials with Zr-doping.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.187-187
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• 2012

Solution-processed metal-alloy oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) has been extensively researched due to their high electron mobility, environmental stability, optical transparency, and solution-processibility. In spite of their excellent material properties, however, there remains a challenging problem for utilizing IZO or IGZO in electronic devices: the supply shortage of indium (In). The cost of indium is high, what is more, indium is becoming more expensive and scarce and thus strategically important. Therefore, developing an alternative route to improve carrier mobility of solution-processable ZnO is critical and essential. Here, we introduce a simple route to achieve high-performance and low-temperature solution-processed ZnO thin film transistors (TFTs) by employing alkali-metal doping such as Li, Na, K or Rb. Li-doped ZnO TFTs exhibited excellent device performance with a field-effect mobility of $7.3cm^2{\cdot}V-1{\cdot}s-1$ and an on/off current ratio of more than 107. Also, in case of higher drain voltage operation (VD=60V), the field effect mobility increased up to $11.45cm^2{\cdot}V-1{\cdot}s-1$. These all alkali metal doped ZnO TFTs were fabricated at maximum process temperature as low as $300^{\circ}C$. Moreover, low-voltage operating ZnO TFTs was fabricated with the ion gel gate dielectrics. The ultra high capacitance of the ion gel gate dielectrics allowed high on-current operation at low voltage. These devices also showed excellent operational stability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.993-995
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• 1998

We fabricated fiber gratings with three different Ge-doped fibers exposed to 60atm pressure of Hz gas at 90"C for different times and studied the effects of Ge-doping concentration and $H_2$ loading time on the growth of gratings. According to experiments. the growing effect of hydrogen loading on high Ge-doped fiber was great.

• Bulletin of the Korean Chemical Society
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• 제30권10호
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• pp.2223-2226
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• 2009

Pristine and sulfur-doped (LiFe$PO_{3.98}S_{0.03}$) lithium iron phosphates were synthesized by a sol-gel method. The XRD pattern of the prepared materials suggested an orthorhombic structure with a Pnma space group and an absence of impurities. The Li/LiFe$PO_4$ or LiFe$PO_{3.98}S_{0.03}$ cells were employed for cycling studies at various temperatures (25, 50 and $60\;{^{\circ}C}$). In all cases, the Li/LiFe$PO_{3.98}S_{0.03}$ cell showed an improved performance with a stable discharge behavior of ~155 mA$hg^{-1}$. Nevertheless, pristine LiFeP$O_4$ cells presented poor discharge behavior at elevated temperatures, especially $60\;{^{\circ}C}$.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• 전기화학회지
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• 제14권4호
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• pp.208-213
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• 2011

합성된 $BF_3LiMA$ 리튬염을 단량체로 사용하는 고체 고분자전해질을 제조하고 $BF_3LiMA$의 농도가 이온전도도에 미치는 영향 및 전기화학적 안정성을 교류임피던스 측정법과 선형전위주사법을 통하여 평가하였다. 그 결과 $BF_3LiMA$가 12.9 wt%인 고체 고분자전해질에서 $7.71{\times}10^{-6}S\;cm^{-1}$의 가장 높은 $25^{\circ}C$ 이온전도도가 관찰되었으며 이 값을 전후로 이온전도도는 다소 감소하는 경향이 나타났다. 이러한 결과는 저농도의 $BF_3LiMA$에서 발생할 수 있는 리튬염의 부족과 고농도의 $BF_3LiMA$에서는 발생할 수 있는 고분자기질의 유동성 감소가 원인으로 해석된다. 또한 $BF_3LiMA$ 기반의 고체 고분자전해질은 음이온이 고정되어 있는 자기-도핑형 계열로서 $60^{\circ}C$에서 6.0 V까지 우수한 전기화학적 안정성을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.11-11
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• 2006

ZnO는 넓은 밴드갭(3.37eV)과 큰 액시톤(exciton) 결합에너지(60meV)를 가지는 II-VI족 화합물 반도체이다[1]. 이와같은 특성은 상온에서도 높은 재결합 효율이 기대되는 엑시톤 전이가 가능하여 자발적인 발광특성 및 레이저 발진을 위한 낮은 임계전압을 가져 일광효율이 큰 장점이 있다. 최근에는 ZnO의 전기적, 광학적, 자기적 특성을 높이기 위해 doping에 대한 연구가 많이 보고 되고 있다. 이중 ZnO내에 Mg을 doping하게 되면 Mg 조성에 따라 밴드갭이 3.3~7.7eV까지 변하게 된다. 그러나 이원계 상평형도에 따라 ZnO내에 고용될 수 있는 MgO의 고용도는 4at% 이하이다. 이는 ZnO는 Wurtzite 구조이고, MgO는 rocksalt 구조로 각각 결정구조가 다르기 때문이다. 본 연구는 열기상증착방법(thermal evaporation)으로 ZnO 템플레이트를 이용하여 MgZnO 나노막대를 합성하였고, Zn와 Mg의 서로 다른 녹는점을 이용해 2-step으로 성장을 하였다. 합성은 수평로를 사용하였으며, 반응온도 550, $700^{\circ}C$로 2-step으로 하였으며, 소스로 사용된 Zn(99.99%)과 Mg(99.99%) 분말을 산소를 직접 반응시켜 합성하였다. Ar 가스와 O2 가스를 각각 운반가스와 반응가스로 사용하였다. ZnO 템플레이트 위에 성장시킨 1차원 MgZnO 나노구조의 형태 및 구조적 특성을 FESEM과 TEM으로 분석하였다. 그리고 결정학적 특성은 XRD를 이용해 분석하였다.

• Korean Chemical Engineering Research
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• 제48권5호
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• pp.654-659
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• 2010

박막형 유기 태양전지의 효율 향상을 위하여 정공 수송층인 CuPc 층에 p형 유기 반도체인 rubrene을 함량 별로 도핑하여 ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al의 이종접합구조를 가지는 p-i-n형 유기 박막형 태양전지 소자를 제조한 후, 유기 태양전지의 전류 밀도-전압(J-V) 특성, 단락 전류($J_{sc}$), 개방 전압($V_{oc}$), 충진 인자(fill factor:FF), 에너지 전환 효율(${\eta}_e$) 등을 측정하고 계산하여 성능 평가를 수행 하였다. 정공 수송층으로 사용된 CuPc 층에 rubrene을 도핑함으로써 에너지 흡수 스펙트럼에서 흡수 강도가 감소하였다. 그러나 CuPc 보다 큰 밴드갭을 가지며 높은 정공 이동도를 가지는 결정성 rubrene의 도핑에 의해 제조된 p-i-n형 유기 박막 태양전지의 성능은 향상 되는 것으로 확인되었다. 제조된 유기 태양전지의 에너지 전환 효율(${\eta}_e$)은 1.41%로 실리콘 태양전지와 비교해서 아직도 성능 향상을 위한 많은 노력이 필요함을 보여 준다.