• The Korean Journal of Zoology
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• v.26 no.3
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• pp.211-217
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• 1983

Genetic polymorphism of transferrin $(T_f)$ subtypes in Jeju population was studied by isoelectric focusing of human sera on polyacrylamide gels under high voltage, and haptolobin (Hp) polymorphism in Seoul and Jeju population was studied by polyacrylamide gel electrophoresis. Among 946 normal samples, three common types of transferrin, $T_{f}C_{1}, T_{f}C_{1}-C_{2} and T_{f}C_{2}$ were observed with some variants migrating slower than $T_{f}C$ subtypes, while among 139 patient (hepatitis) samples, only three common types were found. The gene frequencies were calculated as follows; in normal population, $T_{f}C^{1}$ was 0.7220; $T_{f}C^{2}, 0.2743; T_{f}D^{Jeju}, 0.0037$, and in patient population, $T_{f}C^{1} was 0.7194; T_{f}C^{2}, 0.2806$ respectively. Among 460 samples in Seoul and 502 in Jeju population, three types of haptoglobin, Hp 1-1, Hp 2-1 and Hp 2-2 were observed. The gene frequency of $Hp^1$ was 0.304, $Hp^2$, 0.696 in Seoul and in Jeju, $Hp^1$ was 0.269 and $Hp^2$, 0.731, respectively. The frequencies of the genes and the polymorphic phenotypes were discussed comparatively with the other populations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• Bulletin of the Korean Chemical Society
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• v.7 no.6
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• pp.466-468
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• 1986

Reaction of $Ir(ClO_4)(CO)(PPh_3)_2$ with trans-$C_6H_5CH$ = $CHCO_2C_2H_5$ produces a new cationic iridium(I) complex, [Ir (trans-$C_6H_5CH$ = $CHCO_2C_2H_5)(CO)(PPh_3)_2]ClO_4$ where trans-$C_6H_5CH$ = $CHCO_2C_2H_5$ seems to be coordinated through the carbonyl oxygen rather than through the $\pi$-system of the olefinic group according to the spectral data. It has been found that Ir$(ClO_4)(CO)(PPh_3)_2$ catalyzes the hydrogenation of $CH_2$ = $CHCO_2C_2H_5$, trans-$CH_3CH$ = $CHCO_2C_2H_5$ and trans-$C_6H_5CH$ = $CHCO_2C_2H_5$ to $CH_3CH_2CO_2C_2H_5$, $CH_3CH_2CH_2CO_2C_2H_5$ and $C_6H_5CH_2CH_2CO_2C_2H_5$, respectively at room temperature under the atmospheric pressure of hydrogen. The relative rates of the hydrogenation of the unsaturated esters are mostly understood in terms of steric reasons.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.44-52
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• 1992

The effect of sintering atmosphere on the final properties and phase change of Ti (C, N) Cr3c2 ceramics was investigated. In the case of sintering in vacuum and N2 atmosphere, densely packed sintered body was obtained. In Ar atmosphere, however, densification was much decreased compared to sintering in vacuum and Na. XRD analysis showed that in vacuum atmosphere Cr3c2 phase was changed to Cr7c3 Phase whereas in N2 and Ar atmosphere phase change was not occurred. That is, for vacuum sintering, the formation of defects in Ti(C, N) structure occurred through de-nitridation process, and it promotes the diffusion of C in Cr3c2 and raises the densification effects. But in the case of N2 atmosphere, densification phenomenon was considered to be due to sintering mechanism that enabled formation of free carbon and removal of oxygen by free carbon and existence of carbon in the grain boundary.

• Korean Journal of Agricultural Science
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• v.18 no.2
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• pp.119-126
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• 1991

The lipid fractions, lipid classes and free fatty acids in total lipids from cheese and soybeans were analyzed by column, thin-layer and gas chromatographies. The percentages of neutral lipid, glycolipid and phospholipid in cheese were 96.2, 1.1 and 0.7, whereas those in soybeans were 87.5, 0.5 and 4.3. Major lipid classes of total lipid, and neutral lipid were triglyceride, fatty acid, cholesterol, diglyceride, monoglyceride and polar lipid, and those of glycolipid and phospholipid were triglyceride, diglyceride, monoglyceride and polar lipid in total lipid from cheese. Large amounts of triglyceride and polar lipid and small amounts of diglyceride, monoglyceride and polar lipid were detected in all lipid fractions from soybeans. The higher proportion of C4:0, C6:0, C8:0, C10:0, C12:0, C14:0, C16:0, C16:1, C18:0, C18:1 and C18:2 fatty acids were found in total lipid from cheese, whereas those of C18:0, C18:2 and C18:3 fatty acids were found in total lipid from soybeans. Most predominant fatty acids are C16:0 for the total lipid of cheese and C18:2 for the total lipid of soybeans. The lower proportions of C14:1, C15:0, C17:0 and C20:0 fatty acids in total lipid from cheese and C4:0, C6:0, C10:0 and C18:0 in total lipid from soybeans were detected.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.266-271
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• 2009

In the recently synthesized rare earth transition metal carbide $La_7O_{s4}C_9$ one finds one-dimensional organometallic $[O_{s4}C_9]^{21-}$ polymers embedded in a $La^{3+}$ ionic matrix. The electronic structure of the polymeric $[O_{s4}C_9]^{21-}$ chain was investigated by density of states (DOS) and crystal orbital overlap population (COOP), using the extended Huckel algorithm. A fragment molecular orbital analysis is used to study the bonding characteristics of the $C_2$ units in $La_7O_{s4}C_9$ containing $C_2$ units and single C atoms as well. The title compound contains partially filled Os and carbon bands leading to metallic conductivity. As the observed distances already indicated, the calculations show extensive Os-C interactions. The C-C bond distance in the diatomic $C_2$ units ($d_{C-C}$=131 pm) in the solid is significantly increased relative to $${C_2}^{2-}$$ or acetylene, because antibonding $1{\pi}_g$ orbitals are partially filled by the Os-$C_2(1\;{\pi}_g)$ bonding contribution found at and below the Fermi level.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1114-1118
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• 2000

Ti 및 C 입자로 이루어진 다공질 성형체에 용융 Si의 침윤 및 반응으로 새로운 Ti$_3$SiC$_2$합성공정이 개발되었다. 용융 Si 침윤에 의한 Ti$_3$SiC$_2$합성공정에서는 이제까지 연구된 합성방법 보다 넓은 조성 범위에서 Ti$_3$SiC$_2$의 합성이 이루어졌다. 용융 Si을 활성 매질로 사용한 Ti$_3$SiC$_2$의 합성에서는 성형체 조성, 원료 입자 크기 및 침윤되는 용융 Si의 양에 따라 합성되는 상 및 각 합성상의 양이 다르게 나타났다. Ti:Si:C=3:1:6 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$상이 합성되었으며, 일부 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$, TiC 및 SiC가 함께 합성되었다. 작은 Ti 입자로 이루어진 성형체를 사용하여 합성한 시편에서 Ti$_3$SiC$_2$상의 합성이 용이하게 이루어졌으며, 성형체 조성 및 침윤되는 Si의 양이 화학양론적으로 Ti$_3$SiC$_2$에 근접한 조성을 갖는 시편에서 Ti$_3$SiC$_2$를 높은 수율로 합성할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.849-860
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• 1994

The microstructural evolution and crystalline phases of this infiltration of Ti+Al liquids in TiC, SiC, TiC+C, and SiC+C preforms have been investigated. As the Ti and Al mixing ratio in Ti+Al infiltrated liquid changes, the newly formed reaction products, which were reacted from the Ti+Al liquid with preforms, consisted of three major phases as Ti3AlC, Al2Ti4C2 or Al4C3. The TiC grain shape was changed to spheroid, when Ti3AlC was formed. In case of Al2Ti4C2 formation, the platelet grain was formed from the original TiC grain. When Al4C3 was formed, nodular or intergranular fine-grained Al4C3 was formed around the TiC grain, while the original TiC grain shape was not changed.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1303-1304
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• 2007

The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.340-348
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• 2017

$SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.