• Journal of the Korea Society of Computer and Information
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• v.18 no.5
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• pp.113-120
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• 2013

This paper proposes an algorithm that proves an NP-complete 4-color theorem by employing a linear time complexity where $O(n)$. The proposed algorithm accurately halves the vertex set V of the graph $G=(V_1,E_1)$ into the Maximum Independent Set (MIS) $\bar{C_1}$ and the Minimum Vertex Cover Set $C_1$. It then assigns the first color to $\bar{C_1}$ and the second to $\bar{C_2}$, which, along with $C_2$, is halved from the connected graph $G=(V_2,E_2)$, a reduced set of the remaining vertices. Subsequently, the third color is assigned to $\bar{C_3}$, which, along with $C_3$, is halved from the connected graph $G=(V_3,E_3)$, a further reduced set of the remaining vertices. Lastly, denoting $C_3$ as $\bar{C_4}$, the algorithm assigns the forth color to $\bar{C_4}$. The algorithm has successfully obtained the chromatic number ${\chi}(G)=4$ with 100% probability, when applied to two actual map and two planar graphs. The proposed "four color algorithm", therefore, could be employed as a general algorithm to determine four-color for planar graphs.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Korean Journal of Plant Resources
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• v.19 no.6
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• pp.700-705
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• 2006

Present studies were performed to determine the physiology of seed germination in Viola species native to Korea. Twelve species, 1 variety and 1 form were collected, classified and used as materials: V. collina, V. blandaefomis, V. rosii, V. chaerophylloides, V. phalacrocarpa, V. patrinii, V. mandshurica, V. mandshurica for. albescence, V. seoulensis, V. yedoensis, V. keiskei, V. variegata, V. variegata var. chinensis, and V. verecunda. V. tricolor 'Helen Mount' was also used to compare wild with cultivated species. In order to investigate the effect of temperature on seed germination, seeds stored at $4{\pm}2^{\circ}C$ for 10 months or 4 years were incubated at 10, 15, 20, $25^{\circ}C$ under 16h illumination with 4 replicates per treatment. Seeds which had not germinated at $10^{\circ}C$ were transferred to $30^{\circ}C$ to assess the effect of temperature change in germination. Germination percent and the days of first, 40% and 80% germination were assessed. Capability of seed germination varied with taxon; Species belonging to subsection Patellares had high ability of germination, compared to species in the other subsections, and series Chinensis was the best among subsection Patellares. Species capable of high germination germinated in all temperatures with reasonably high germination rate, but the other species responded sensitively to temperature with different germination patterns. Higher the temperature, shorter the incubation time required for first, 40% and 80% of germination. Therefore, high temperature was effective in almost all species, not only for inducing high rate of germination but also the uniformity of germination. Temperature change from $10^{\circ}C\;to\;30^{\circ}C$ had a positive effect on seed germination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Fire Science and Engineering
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• v.15 no.3
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• pp.44-48
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• 2001

In this study, we analyzed the $CH_4$and $C_4$$H_{10}$ sensitivity measurement and voltage variation using catalytic type gas sensor characteristics in catalytic combustion type gas detecter sensors. Gas detector shall operate as intended when exposed for 24 hours to air having a relative humidity of 65 percent at a temperature of $20^{\circ}c$ and humidity of 85 percent at a temperature of $40^{\circ}c$. The gas detecter sensors are to be subjected to operation for 210 days in an area that has been determined to be equivalent to a typical residential atmosphere with an air velocity of 50 cm/sec. The source of energy for a gas detector sensors employing a supplementary basic circuit is energized from a seperate source of supply direct applied voltage 2.1V, 2.2V, 2.3V. As a result, it was confirmed that the relative humidity and temperature by regression each analysis, compared to the isobutane characteristic graph and methane characteristic graph by a relative humidity of 65% and 85% at a temperature($20^{\circ}c$, $40^{\circ}c$) show a similar linear pattern on the whore.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.156-160
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• 2006

Capacitance versus voltage (C-V) curves of Ge-nanocrystal (NC)-embedded MOS capacitors with and without a single capping Al2O3 layer are characterized in this work. C-V curves of the Ge-NC-embedded MOS capacitor with the A12O3 layer are counterclockwise in the voltage sweeps, which indicates tile presence of charge storages in the Ge NCs by the tunnelling of charge carriers between the Si substrate and the Ge NCs. In the Ge-NC-embedded MOS capacitor without Al2O3 layer, clockwise hysteresis of the C-V curves and leftward shifts of the flat band voltages are observed for the embedded MOS capacitor without the Al2O3 layer. It is suggested that the characteristics of the C-V curves are due to the charge trapping at oxygen vacancies within a SiO2 layer. In addition, the illumination of the white light enhances the lower capacitance part of the C-V hysteresis. The origin for the enhancement is discussed in this paper.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.6
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• pp.534-542
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• 2003

Small electric motors in an automobile perform various tasks such as engine cooling, pumping, HVAC etc. At present, most of them are DC motors supplied by 12V or 24V batteries. However, DC motors suffer from low efficiency, life cycles and reliability. Therefore, there is a growing interest in substituting DC motors for advanced at motors including switched reluctance motors(SRM). Although there are several other forms SRM convertors, they are either unsatisfactory to the control performance or unsuitable for the 12V battery source. Especially, a conventional asymmetric converter of SRM provides the best flexible and effective control to the current waveform of SRM, but it has the most switches and produces conducting voltage drops across two power switches during SRM operation. For automotive applications with a 12V battery source, this circuit is inadequate. For considering the requirement for effective operation and simple structure of converter in the limited internal circumstance of automobiles, the author inclines toward selecting Modified C-dump converter and Energy efficient c-dump converter.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.3
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• pp.38-42
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• 2000

Plasma polymerized thin films were manufactured inter-electrode coupled plasma polymerization apparatus. The deposition rate reached its maximum between 40[W] and 100[W]. In the ESCA analysis, peaks revealing -CH2, -CH, -C- were present at 285.4 and 285.5[eV] respectively. The C=O peak at 532.8[eV] and the C-O peak at 533.8[eV], which were grouped with an unignorable amount of oxygen were conformed. In ESR analysis, the curve revealing strong amplification was in saturation, which was affected by weak power. This is considered as a -CH-Ch=Ch- structure containing the Allyl group. The relative permittivity of the plasma polymerized thin films was about 3.5 at a frequency of 100[Hz]∼200[kHz]. The dissipation factor showed allow value of 0.008.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.207-212
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• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.