• Journal of Environmental Science International
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• v.13 no.6
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• pp.537-542
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• 2004

$V_{2}O_{5}/TiO_{2}$ catalysts promoted with Mn were prepared and tested for selective catalytic reduction of NOx in $NH_3.$ The effects of promoter content, degree of catalyst loading were investigated for NOx activity while changing temperatures, mole ratio, space velocity and $O_2$ concentration. Among the various $V-{2}O_{5}$ catalysts having different metal loadings, $V-{2}O_{5}$(1 wt.%) catalyst showed the highest activity(98%) under wide temperature range of $200-250^{\circ}C.$ When the $V-{2}O_{5}$ catalyst was further modified with 5 wt.% Mn as a promoter, the highest activity(90-47%) was obtained over the low temperature windows of $100-200^{\circ}C.$ From Mn-$V_{2}O_{5}/TiO_{2}$, it was found that by addition of 5 wt.% Mn on $V_{2}O_{5}/TiO_{2}$ catalyst, reduction activity of catalyst was improved, which resulted in the increase of catalytic activity and NOx reduction. According to the results, NOx removal decreased for 10%, but the reaction temperature down to $100^{\circ}C.$

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

• Korean Journal of Crystallography
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• v.15 no.1
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• pp.35-39
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• 2004

Two new nickel vanadium borophosphate cluster compounds, $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (1) and $(NH_4)_{3.5}(C_3H_{12}N_2)_{3.5}[Ni(H_2O)_6]_{1.25}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (2) have been synthesized and structurally characterized. Inter-diffusion methods were employed to prepare the compounds. The cluster anion $[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6$ is used as a building unit in the synthesis of new compounds containing $Ni(H_2O){^{2+}_5}$ in the presence of pyrazine and 1,3-diaminopropane. Compounds contain isolated cluster anions with general composition ${[Ni(H_2O)_5]_n[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6}^{-(17-2n)}$ (n = 2, 4). Crystal data: $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$, monoclinic, space group C2/m (no. 12), a = 27.538(2) ${\AA}$, b = 20.366(2) ${\AA}$, c = 11.9614(9) ${\AA}$, ${\beta}$ = 112.131(1)$^{\circ}$, Z = 8; $(NH_4)_{3.5}(C_3H_{12}N_2)_b[Ni(H_2O)_6]_{3.5}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$, triclinic, space group P-1 (no. 2), a = 17.7668(9) ${\AA}$, b = 17.881(1) ${\AA}$, c = 20.668(1) ${\AA}$, ${\alpha}$ = 86.729(1)$^{\circ}$, ${\beta}$ \ 65.77(1)$^{\circ}$, ${\gamma}$ = 80.388(1)$^{\circ}$, Z = 2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.797-800
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• 2002

Instead of a solution process producing amorphous $LiV_3O_8$ form, we prepared Lithium vanadate glass by melting $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ composition in pt. crucible and by quenching on the copper plate. From the crystallization of $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$, we could abtain glass-ceramics having crystal phase, LiV3O8 from glass matrix. The material heat-treated at lower-temperature, $250^{\circ}C$ had less crystalline and lower capacity, But the material heat-treadted at higher-temperature, $330^{\circ}C$ had higher capacity and $Li_2O-P_2O_5-V_2O_5$ glass-ceramics had higher capacity than $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Applied Chemistry for Engineering
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• v.7 no.2
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• pp.362-370
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• 1996

The performance of The performance of $Li/V_6O_{13}$ cell and the electrochemical properties of polymer electrolyte based on poly(acrylonitrile)[PAN] was investigated. The ionic conductivity of polymer electrolyte showed $2.3{\times}10^{-3}S/cm$ and the compatibility with lithium electrode was excellent. Also, it showed the electrochemical stability up to 4.3V(vs. $Li^+/Li$). The cell reaction of $Li/V_6O_{13}$ was dominated by the interfacial resistance between $V_6O_{13}$ electrode and polymer electrolyte. The diffusion coefficient of lithium ion within $V_6O_{13}$ was $2.7{\times}10^{-9}{\sim}4.2{\times}10^{-8}cm^2/sec$. The utilization of $V_6O_{13}$ active material was 95% at C/8($50{\mu}A/cm^2$) and 82% at C/4($100{\mu}A/cm^2$), respectively.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.198-203
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• 1995

The Mo(V) $di-\mu-oxo$ type $(Mo_2O_4(H_2O)_2L)$ complexes $(L:\;C_3H_7CH(SCH_2COOH)_2,\;C_6H_5CH(SCH_2COOH)_2,\;CH_3OC_6H_4CH(SCH_2COOH)_2,\;C_5H_{10}C(SCH_2COOH)_2,\;C_3H_7C(CH_3)(SCH_2COOH)_2,\;C_3H_7CH(SCH_2CH_2COOH)_2,\;C_6H_5CH(SCH_2CH_2COOH)_2)$ have been prepared by the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with a series of dithiodicarboxy ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate type between two molybdenum. In $Mo_2O_4(H_2O)_2L$, two $H_2O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, electronic spectra, and nuclear magnetic resonance spectra. In the potential range -0.00 V to -1.00 V at a scan rate of 20 $mVs^{-1}$, a cathodic peak at -0.50∼-0.58 V (vs. SCE) and an anodic peak at -0.40∼-0.43 V (vs. SCE) have been observed in aquous solution. The ratio of the cathodic to anodic current ($I_{pc}/I_{pa}$) is almost 1, we infer that redox is reversible reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.410-414
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• 2001

The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.