• 제목/요약/키워드: C.O.V.

검색결과 3,743건 처리시간 0.042초

Characterization of Surface Oxides in Gold Thin Films with V- and Ti- underlays by AES and XPS (AES/XPS를 이용한 Au/V, Au/Ti 박막의 표면산화물 분석)

  • Kim, Jin -Young
    • Journal of the Korean Vacuum Society
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    • 제1권1호
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    • pp.100-105
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    • 1992
  • Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) analyses have been performed on double-structured Au/V and Au/Ti thin films after heat treatment at 500$^{\circ}$C in air. V- and Tiunderlays sandwiched between gold thin films and SiOz substrates form oxides on the free surface of gold films during the heat treatment. The chemical compositions of the oxides were identified as V205 and TiOz in Au/V and Au/Ti thin films, respectively.

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Characteristics of NOx Reduction Using V2O5 - TiO2Catalyst Coated on Ceramic Foam Filters (V2O5 - TiO2 촉매 담지된 세라믹 폼 필터를 이용한 NOx 제거 특성)

  • Han Yoseop;Kim Hyunjung;Park Jaikoo
    • Journal of Korean Society for Atmospheric Environment
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    • 제20권6호
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    • pp.773-781
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    • 2004
  • Ceramic foams prepared from silica -clay were coated with TiO$_2$ and V$_2$O$_{5}$ catalysts for selective catalytic reduction of NOx with NH$_3$. The effects of V$_2$O$_{5}$ loading, reaction temperature, space velocity, and oxygen content on NOx reduction with NH$_3$ were mainly investigated. Also, the NOx reduction characteristics of V$_2$O$_{5}$ and V$_2$O$_{5}$ -TiO$_2$ filters were compared when sulfur dioxide exists. From the results, the optimal NOx reduction with the maximum reduction efficiency of 91 % could be performed under the condition with V$_2$O$_{5}$ loading 6.0 wt. %, reaction temperature 35$0^{\circ}C$, space velocity 6,000h$^{-1}$ , and oxygen content 5%. And, the V$_2$O$_{5}$ -TiO$_2$ filters have shown higher NOx reduction efficiency and acid resistance against sulfur dioxide than the V$_2$O$_{5}$ filters.

Ab Initio Study of Vibrational Spectra of p-tert-Butylcalix[4]aryl Ester Complexed with Alkali Metal Cation (알칼리금속 양이온과 착물을 형성한 캘릭스[4]아릴에스터의 진동스펙트럼에 대한 순수양자역학적 연구)

  • Choe, Jong-In;Kim, Gwang-Ho
    • Journal of the Korean Chemical Society
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    • 제50권1호
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    • pp.7-13
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    • 2006
  • infrared(IR) absorption spectra were calculated for the ethyl ester of p-tert-butylcalix[4]arene (1) in the cone conformer and its alkali-metal-ion complex. The vibrational spectra were obtained by restricted Hartree-Fock (RHF) calculations with the 6-31G basis set. The characteristic vibrational frequencies of various C-O and C=O stretching motions of the complexes show that the structure of 1+K+ complex is almost of C4v symmetry compared to 1+Na+ (C2v) analogue. The theoretical results for the host molecule 1 and complex (1+Na+) were compared with the experimental results, and the calculated vibrational frequencies agree well with the features of the experimental spectra.

Effects of annealing temperatures on the electrical properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)structures with various insulators

  • Jeong, Shin-Woo;Kim, Kwi-Jung;Han, Dae-Hee;Jeon, Ho-Seoung;Im, Jong-Hyun;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.112-112
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    • 2009
  • Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.

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Sintering and Electrical Properties of Mn-doped ZnO-$TeO_2$ Ceramics

  • Hong, Youn-Woo;Baek, Seung-Kyoung;Hwang, Hyun-Suk;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.49-49
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    • 2008
  • ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

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Low operating voltage and long lifetime organic light-emitting diodes with vanadium oxide $(V_2O_5)$ doped hole transport layer

  • Yun, J.Y.;Noh, S.U.;Shin, Y.C.;Baek, H.I.;Lee, C.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1038-1041
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    • 2006
  • We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

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REACTIVITY AND DURABILITY OF V2O5 CATALYSTS SUPPORTED ON SULFATED TIO2 FOR SELECTIVE REDUCTION OF NO BY NH3

  • Choo, Soo-Tae;Nam, Chang-Mo
    • Environmental Engineering Research
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    • 제10권1호
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    • pp.31-37
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    • 2005
  • The selective catalytic experiments using both sulfated/sulfur-free titania and V2O5/TiO2 catalysts have been conducted for NO reduction by NH3 in a packed-bed, down-flow reactor. The sulfated and vanadia loaded titania exhibited higher activity for NO removal than the sulfur-free catalysts, where > 90% NO removal was achieved over the sulfated V2O5/TiO2 catalyst between 280∼500 C. The surface structure of vanadia species on the catalyst surface played a critical role in the high performance of catalysts in which the existence of monomeric/polymeric vanadate is revealed by Raman spectra studies. Water vapor and SO2 were added to the reacting system for the catalyst deactivation tests. At higher temperatures (T ≥ 350 C), little deactivation was observed over the sulfated V2O5/TiO2 catalysts, showing good durability against SO2 and water vapor, which is compared with deactivation at lower temperatures.

ITZO 박막 트랜지스터의 산소 분압과 열처리 온도 가변에 따른 전기적 특성

  • Kim, Sang-Seop;Go, Seon-Uk;Choe, Byeong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.243.1-243.1
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    • 2013
  • 본 연구에서는 산소 분압과 열처리 온도에 따른 ITZO 박막 트랜지스터의 전기적 특성 향상을 목적으로 실험을 진행하였다. 1) ITZO 박막 증착 시 산소 분압 가변($O_2/(Ar+O_2)$ 30~40%), 열처리 온도 고정($350^{\circ}C$)과 2) ITZO 박막 증착 시 산소 분압 고정(30%), 열처리 온도($200{\sim}400^{\circ}C$)를 가변하여 실험을 진행하였다. 두 실험 모두 특성향상을 위해 산소 분위기에서 열처리를 진행하였다. 산소의 분압이 증가할수록 산소 빈자리를 채우면서 전자 농도가 감소하여 채널 전도 효과가 줄어들면서 Hump 현상이 발생하였고, 스윙이 증가, 문턱 전압이 음의 방향으로 이동하였다. 이에 $O_2/(Ar+O_2)$)의 30%에서 30%일때, 문턱전압은 1.98 V, 전계 효과 이동도는 28.97 $cm2/V{\cdot}s$, sub-threshold swing은 280 mv/dec, on-off 비율은 ~107로 가장 우수한 전기적 특성을 보였다. 또한 열처리 온도 가변 시 $400^{\circ}C$에서 전계 효과 이동도는 28.97 $cm^2/V{\cdot}s$$200^{\circ}C$의 전계 효과 이동도는 11.59 $cm^2/V{\cdot}s$에 비해 약 3배 증가하였고, 소자의 스위칭 척도인 sub-threshold swing은 약 180 mv/dec 감소하였다. 문턱 전압은 0.97V, on-off ratio는 약 107을 보였다. 동일한 산소 분압의 분위기에서 $400^{\circ}C$ 열처리 시 가장 우수한 전기적 특성을 보였고, 저온 공정으로 인한 플렉서블 디스플레이 투명 디스플레이 적용 가능성을 확인하였다.

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Study on dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_{3}$thin films for high-frequency passive device (고주파 수동소자 유전체용 $Ba_{0.5}Sr_{0.5}TiO_{3}$ 박막의 유전특성에 관한 연구)

  • 이태일;최명률;박인철;김홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.263-266
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    • 2001
  • In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

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Electrochemical Properties of LiNiO$_2$/Li cell (LiNiO$_2$/Li cell의 전기화학적 특성)

  • 전대규;김철중;성창호;구할본
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.279-282
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    • 1997
  • The propose of this study is research and improvement of LiNiO$_2$as cathode material for Lithium secondary batteries. LiNiO$_2$is prepared by heating LiOH . $H_2O$ and Ni(OH)$_2$(mole ratio 1 : 1) on various heat condition. In the result of XRD mesurement, all LiNiO$_2$prepared at this study showed hexagonal structure. In Cyclic Voltammetry, LiNiO$_2$is not conspicous about oxidation peak but oxidation curve change steeply over 3.8V and reduction peak discover at 3.6V. In discharge capacities, specific capacity is higher $O_2$than air when preliminary heated and 75$0^{\circ}C$ than $700^{\circ}C$, 80$0^{\circ}C$ when heated. Therefore, when preliminary heat at $650^{\circ}C$ $O_2$and heat at 75$0^{\circ}C$ carried out, discharge property is the best.

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