• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.10
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• pp.4672-4678
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• 2013

Aluminum dross is formation at the surface of the molten metal as the latter reacts with the furnace atmosphere and it was an unavoidable by-product of the aluminum production process. However aluminum dross was usually landfilled or disposed without treatment, causing much environmental damage. The purpose of this study is to investigate the possibility of ceramic catalyst support using recycled Al dross. The recycled Al dross was made into SCR catalyst by mixing with $WO_3$, $V_2O_5$ and $TiO_2$. The $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR catalyst was observed with XRF, XRD and BET. $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR strength was measured by Universal Testing Machine(UTM). As the added $Al_2O_3$, streagth is increased. And the NOx removal activity was observed by MR(Micro-Reactor). The temperatures ranging from $350^{\circ}C$ and $400^{\circ}C$, $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR catalyst De-NOx performance result of showed excellent activity over 90% at application condition.

• Journal of the Korean Chemical Society
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• v.31 no.3
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• pp.225-230
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• 1987

Electrical conductivity of $CdO-La_2O_3$ system containing 0.8mol% of CdO was measured from 500 to $900^{\circ}C$ at oxygen partial pressures of $10^{-7}\;to\;10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $PO_2$ are found to be linear and the activation energy appears to be 0.97eV. The log ${\sigma}$vs. log $PO_2$ is found to be linear at oxygen pressures of $10^{-7}\;to\;10^{-1}$ atm and $500{\sim}900^{\circ}C$. The conductivity dependence on $PO_2$ at the above temperature range is given by ${\sigma}\;{\alpha}\;PO_2^{1/4}$. The defect structure in this system is believed to be complex, i.e., ${V_{La}}^{'''}$ and $V\"{o}$. The interpretations of conductivity dependences on temperature and $PO_2$ are presented and conduction mechanism is proposed to explain the data.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.7-12
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• 2003

The $Bi_{3.3}La_{0.7}O_{12}$(BLT) capacitors with Metal-Ferroelectric-Insulator-Silicon structure were prepared on $SiO_2/Si$ substrates by using sol-gel method. The BLT thin films annealed at $650^{\circ}C$ and $700^{\circ}C$ showed randomly oriented perovskite crystalline structures. The full with at half maximum (FWHM) of the (117) main peak was decreased from $0.65^{\circ}$ to $0.53^{\circ}$ with increasing the annealing temperature from $650^{\circ}C$ to $700^{\circ}C$, indicating the improvement in the crystalline quality of the film. In addition, the grain size and $R_rms$ , values were increased with increasing the annealing temperatures, showing the rough film surface at higher annealing temperatures. From the capacitance-voltage (C-V) measurements, the memory window voltage of the BLT film annealed at $700^{\circ}C$ was found to be about 0.7 V at an applied voltage of 5 V. The leakage current density of the BLT film annealed at $700^{\circ}C$ was about $3.1{\times}10^{-8}A/cm^2$.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.312-316
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• 1999

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2003.11a
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• pp.131-135
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• 2003

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2459-2465
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• 2007

V2O5/TiO2-ZrO2 catalyst modified with V2O5 was prepared by adding Ti(OH)4-Zr(OH)4 powder into an aqueous solution of ammonium metavanadate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using XRD, DSC, solid-state 51V NMR, and FTIR. In the case of calcination temperature of 500 oC, for the catalysts containing low loading V2O5 below 25 wt % vanadium oxide was in a highly dispersed state, while for catalysts containing high loading V2O5 equal to or above 25 wt % vanadium oxide was well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of TiO2-ZrO2. The strong acid sites were formed through the bonding between dispersed V2O5 and TiO2-ZrO2. The larger the dispersed V2O5 amount, the higher both the acidity and catalytic activities for acid catalysis.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.303-306
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• 2011

[ $V_2O_5$ ]doped Karrooite pigments were synthesized by the solid state method to get stabilized brown pigment in oxidation and reduction atmosphere. Optimum substitution condition and limited dopant with $V_2O_5$ for Karrooite pigment was investigated. With calcination at $1250^{\circ}C{\sim}1400^{\circ}C$, compositions were designed varying $V_2O_5$ molar ratio by increasing 0.02mole to the formula $Mg_1-xTi_2-xM_{2x}O_5$(x = 0.01~0.09 mole). Synthesized pigments were analyzed by XRD, Raman spectroscopy and UV-vis. When $V_2O_5$ was doped from 0.01 to 0.05 mole, single phase of Karrooite was observed at temperature $1300^{\circ}C$ and soaking time 4h by Raman spectroscopy. However, it was found that excess $VO_2$ peak appeared with 0.07 and 0.09 mole of $V_2O_5$ doped to $MgTi_2O_5$. This result indicated that the maximum limit of solid solution is 0.05 mole $V_2O_5$. Karrooite pigments were applied as a ceramic pigment to achieve brown colors in lime magnesia glaze and lime barium graze at both of oxidation and reduction atmosphere. CIE color coordinates are $L^*$ = 40.34, $a^*$ = 9.94, $b^*$ = 21.40 in lime magnesia glaze.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.