• International Journal of Highway Engineering
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• v.20 no.1
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• pp.69-76
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• 2018

PURPOSES : This study determined the optimal usage rate of RAP (reclaimed asphalt pavement) using cold central-plant recycling (CCPR) on a road-surface layer. In addition, a mixture-aggregate gradation design and a curing method based on the proposed rate for the surface-layer mix design were proposed. METHODS : First, current research trends were investigated by analyzing the optimum moisture content, mix design, and quality standards for surface layers in Korea and abroad. To analyze the aggregate characteristics of the RAP, its aggregate-size characteristics were analyzed through the combustion asphalt content test and the aggregate sieve analysis test. Moreover, aggregate-segregation experiments were performed to examine the possibility of RAP aggregate segregation from field compaction and vehicle traffic. After confirming the RAP quality standards, coarse aggregate and fine aggregate, aggregate-gradation design and quality tests were conducted for mixtures with 40% and 50% RAP usage. The optimum moisture content of the surface-layer mixture containing RAP was tested, as was the evapotranspiration effect on the surface-layer mixture of the optimum moisture content. RESULTS : After analyzing the RAP recycled aggregate size and extraction aggregate size, 13-8mm aggregate was found to be mostly 8mm aggregate after combustion. After using surface-chipping and mixing methods to examine the possibility of RAP aggregate segregation, it was found that the mixing method contributed very little for 3.32%, and because the surface-chipping method applied compaction energy directly as the maximum assumption the separation ratio was 15.46%. However, the composite aggregate gradation did not change. Using a 40% RAP aggregate rate on the surface-layer mixture for cold central-plant recycling satisfied the Abroad quality standard. The optimum moisture content of the surface-layer mixture was found to be 7.9% using the modified Marshall compaction test. It was found that the mixture was over 90% cured after curing at $60^{\circ}C$ for two days. CONCLUSIONS : To use the cold central-plant recycling mixture on a road-surface layer, a mixture-aggregate gradation design was proposed as the RAP recycled aggregate size without considering aggregate segregation, and the RAP optimal usage rate was 40%. In addition, the modified Marshall compaction test was used to determine the optimum moisture content as a mix-design parameter, and the curing method was adapted using the method recommended by Asphalt Recycling & Reclaiming Association (ARRA).

• Corrosion Science and Technology
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• v.7 no.6
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• pp.301-306
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• 2008

Surface composite layers of 1.9~2.9 mm in thickness were fabricated by depositing metamorphic powders on a carbon steel substrate and by irradiating with a high-energy electron beam. In the surface composite layers, 48~64 vol.% of $Cr_{2}B$ or $Cr_{1.65}Fe_{0.35}B_{0.96}$ borides were densely precipitated in the austenite or martensite matrix. These hard borides improved the hardness of the surface composite layer. According to the otentiodynamic polarization test results of the surface composites, coatings, STS304 stainless steel, and carbon steel substrate, the corrosion potential of the surface composite fabricated with 'C+' powders was highest, and its corrosion current density was lowest, while its pitting potential was similar to that of the STS304 steel. This indicated that the overall corrosion resistance of the surface composite fabricated with 'C+' powders was the best among the tested materials. Austenite and martensite phases of the surface composites and coatings was selectively corroded, while borides were retained inside pits. In the coating fabricated with 'C+' powders, the localized corrosion additionally occurred along splat boundaries, and thus the corrosion resistance of the coating was worse than that of the surface composite.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2005.05a
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• pp.17-20
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• 2005

This paper reported the temperature history of concrete placed at deck plate slab under cold climate condition by varying with surface insulating type. No curing sheet and simple insulation curing including non-woven fabric, double layer bubble sheet, the combination of double layer bubble sheet and non-woven fabric dropped temperature below zero within 24 hours, which caused frost damage at early age. On the other hand, the combination of double layer bubble sheet and non-woven fabric and double layer bubble sheet and styrofoam maintained minimum temperature above $4^{\circ}C\;and\;8^{\circ}C$, respectively. Based on core test results compressive strength of concrete with the combination of double layer bubble sheet and non-woven fabric and double layer bubble sheet and styrofoam was higher than those with other curing method due to good insulation effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.264-268
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• 2002

Three types of polymer, a photoalignment material based N- (phenol)maleimide were synthesized and the liquid crystal (LC) aligning capabilities on the photopolymer layer were studied. A good LC alignment with UV exposure on the PMI5CA(N-(phenol)maleimide with 5-carbon chain cinnamoyl group) can be obtained. However, the LC alignment defects were observed on the PM13CA (N-(phenol)maleimide with 3-carbon chain cinnamoyl group) and PMIF (N-(phenyl)maleimide including fluoro cinnamoyl group). Also, the good LC alignment with UV exposure on the PM15CA surface was observed at until $150^{\circ}C$ of annealing temperature. The LC aligning ability on the photopolymer layer based N-(phenol)maleimide depends on the side chain length of photopolymer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2304-2308
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• 2010

A $LiNi_{0.8}Co_{0.15}Al_{0.05}O_2$ (LNCAO/C) active material composite cathode was coated with carbon. The conductive carbon coating was obtained by addition of surfactant during synthesis. The addition of surfactant led to the formation of an amorphous carbon coating layer on the pristine LNCAO surface. The layer of carbon coating was clearly detected by FE-TEM analysis. In electrochemical performance, although the LNCAO/C showed similar capacity at low C-rate conditions, the rate capability was improved by the form of the carbon coating at high current discharge state. After 40 cycles of charge-discharge processes, the capacity retention of LNCAO/C was better than that of LNCAO. The carbon coating is effectively protected the surface structure of the pristine LNCAO during Li insertion-extraction.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.486-491
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• 2017

Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.370-371
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• 2007

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by. RF sputtering system. Substrate temperature and work pressure is $100^{\circ}C$ and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. For sample deposited at $300^{\circ}C$, we observed full width at half maximum (FWHM) of 0.240 and good surface morphology.