• Journal of Magnetics
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• v.6 no.4
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• pp.145-147
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• 2001

The effect of interface roughness between [Ni/Mn] superlattice and pinned NiFe layer on magnetoresistance (MR) of [Ni/Mn] superlattice-based spin valve films was investigated. Antiferromagnetic phase structure and interface roughness of [Ni/Mn] superlattice spin valve films were compared in the as-deposited and the annealed samples at 240$\^{C}$, respectively. Surface morphology of spin valves was substantially flattened due to the formation of the antiferromatic NiMn phase. In case of Co insertion between Cu and NiFe, the interlace roughness and MR ratio in the annealed [NiMn] superlattice and pinned NiFe/Co layer increased more than those in the annealed [Ni/Mn] superlattice and pinned NiFe layers respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Ocean and Polar Research
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• v.28 no.3
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• pp.245-258
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• 2006

We investigated seasonal variations of the upper ocean temperature and the mixed layer depth (MLD) in an eddy-permitting global ocean general circulation model (OGCM) to assess the OGCM perfermance. The OGCM is based on the GFDL MOM3 which has a horizontal resolution of 0.5 degree and 30 vertical levels. The OGCM was integrated for 68 years using a monthly-mean climatological wind stress forcing. The model sea surface temperature (SST) and sea surface salinity were restored to the Levitus climatology with a time scale of 30 days. Annual-mean model SST shows a cold bias $(<\;-2^{\circ}C)$ in the summer hemisphere and a warm bias $(>\;1^{\circ}C)$ in the winter hemisphere mainly due to the restoring boundary condition of temperature. The model MLD captures well the observed features in most areas, with a slightly deep bias. However, in the Ross Sea and Weddell Sea, the model shows significantly deeper MLD than the climatology-mainly due to weak salinity stratifications in the model. For amplitude of seasonal variation, the model SST is smaller $(1{\sim}3^{\circ}C)$ than the observation largely due to the restoring surface boundary condition while the model MLD has larger seasonal variation $({\sim}50m)$. It is suggested that for more realistic simulation of the upper ocean structure in the present eddy-permitting ocean model, more refinements in the surface boundary condition for the thermohaline forcing and parameterization for vertical mixing are required, together with the incorporation of a sea-ice model.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• 연구논문집
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• s.24
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• pp.63-79
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• 1994

This article reports a experimental study of the method to achieve a bond joint at lower temperature in a short time. DC magnetron sputtering of Sn, Sn/Pb, Sn/In and Sn/Cu on copper substrate was provided as an interlayer for Cu to Cu bonding under the air environment. Various examination was conducted and investigated on the effect of experimental parameters such as coating materials, coating time(or coating thickness), bonding temperature and bonding time etc. Bonding was performed at the temperature of $210^\circC-320^\circC$ for 0sec and interfacial reaction between the coated layer and copper substrate was examined using optical, scanning electron microscope and x-ray diffractometer. From the obtained results, it was found that intermetallic compounds layer consisted of $\eta-phase(Cu_6Sn_5)$ and $\beta-phase(Cu_3Sn)$ was formed at the joint interface for almost all coating materials. But the dominant phase formed in the preetched Cu substrate coated with Sn was $\beta-phase$. A characteristic morphology looks like a reaction ring, which was believed as the strong interconnecting regions between two substrates, was found to be formed on the reaction surface of copper substrates. The morphologies and compositions of the intermetallics, which depends on the regions of the reaction surface, was appeared as greatly different. Based on above results, the new bonding process to make the joint at lower temperature for short time can be admitted as a feasible process.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.96-102
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• 2001

plasma-sprayed Cr$_2$O$_3$-based coatings containing MoO$_3$ were studied to gain a better understanding of the influence of MoO$_3$ composition in the coatings on their tribological behaviour. A reciprocal type tribo-tester was employed to examine friction and wear behavior of the specimens at high temperature(450。C). The physical characteristics of worn surfaces were investigated by scanning electron microscopy and chemical composition of the coating surfaces was analyzed using a X-ray photoelectron spectrometer. The results showed that friction coefficient of the MoO$_3$-added coatings were lower than those without MoO$_3$ addition. The larger protecting layers were observed at the worn surface of plasma spray coated specimens with MoO$_3$ addition. XPS analysis of the protecting layer indicated that MoO$_3$ composition was dominantly formed at the surface. MoO$_3$ composition in the protecting layer appears to be more favorable in reducing the friction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.55-58
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• 2003

FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.