• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.197-206
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• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.425-433
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• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.253-258
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• 1997

The characteristics of crystal structure and phase transition with dopants ($Nb_2O_5$= 0.1~0.4 mol% and $Y_2O_3$ : 0.2~0.4 mol%) on the PTCR $BaTiO_3$ system were investigated. In the case of $Nb_2O_5$ additive, the lattice parameter of PTCR $BaTiO_3$ was changed linearly with the increasement of $Nb_2O_5$ which substituted B-site of BaTiO$_3$ and the lattice parameter of c-axis decreased abruptly at 0.3 mol%. These phenonmena were assumed to originate from the distortion of octahedron and we could confirm that the change of lattice parameter accorded with the characteristics of the phase transition temperature. $Y^{3+}$ ions substituted both of A- and B-site until the 0.3 mol% addition, but $Y^{3+}$ substitution preferred A- to B-site above 0.3 mol%. This was affirmed by the variation ,of lattice parameter and the characteristics of phase transition. It also was found that $Y^{3+}$ions in the A-site substituted both of $Ba^{2＋}$ and $Ca^{2＋}$ ions with equal ratio by Rietveld method.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.32 no.3
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• pp.317-319
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• 1999

The ciliate, Vorticella was often observed in the rotifer mass culture tanks as common co-existing organism. This Vorticella performed as a predator for aquatic bacteria population in the rotifer mass culture tanks. This study was carried out to investigate a cyst formation medium of Vorticella in the laboratory for keeping Vorticella seed. The test organism Vorticella sp. was isolated from culture water of rotifer mass culture tanks. The cyst of Vorticella was formed by dried-method for the formation and maintainance of cyst. MCCF (Marine Ciliate Cyst Formation) medium was used for cyst formation (incystment), preservation and return to moving cell (excystment) of the marine ciliate, Vorticella sp. The cyst shape and size were ellipical type and $30.51 \pm1.98\;\mu$m (Avg. $\pm$ SD) of minor axis and $28.89 \pm2.12\;\mu$m (Avg. $\pm$ SD) of minor axis (n=10), The Vorticella cyst was kept in the room temperature ($10\~35^{\circ}C$) and total dark condition (24D:0L) during 1 year. The preserved cyst was transferred to moving cell state (excystment) only by the addition of fresh sea water in the MCCF medium. The five Vorticella sp. moving cells of excysted from cysts showed the growth up to 912$\pm$64 cells/10 ml in MCCF medium during the culture period of 16 days. This MCCF medium was very useful tool for cyst formation and species preservation of marine ciliate Vorticella.

• Journal of the Korean Electrochemical Society
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• v.8 no.2
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• pp.94-98
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• 2005

Coptp films with the additive elements (X=Fe, Mn) of varying concentrations were prepared by in-situ electrodeposition, to tailor their magnetic properties. Alloys of CoPtP-X (X=Fe, Mn) were synthesized by changing the solution concentrations of Fe and Mn for electrodeposition. In the electrodeposited CoFePtP alloys, preferred orientation of the electrodeposited films changed from hexagonal (001) to (100) direction with increasing iron contents as revealed by X-ray diffraction, and these films exhibited various magnetic properties ranging from a typical hard magnetic to a soft magnetic property in accordance with microstructural variations. In the case of Mn addition, excellent hard magnetic property was observed at a specific Mn concentration of 0.0126 M in the electrolyte, with the coercivity of 4630 Oe and squareness of 0.856 and this was attributed to the fact that magnetization easy-axis (hexagonal c-axis) coincides with the preferred growth orientation of the film confirmed by transmission electron microscopy.

• Applied Biological Chemistry
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• v.24 no.4
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• pp.207-212
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• 1981

Nutritional evaluation of nitrogen compounds of soybean and soybean sprout in various growth conditions various conditions was conducted by feeding Sprague-Dawley strain of albino rat and was correlated with chemical evaluation. food intake and PER also showed the same trend as weight gain. Average body fyeight gain showed significant positive correlation with essential amino acid index (EAAI) $(r=0.996^{**})$ and requirement index (RI) $(r=0.988^{**})$. According to EAAI and RI, quality of soybean sprout was in order of Soybean-heated, 4 days soybean sprout (S.S.) cotyledon, 4 days S.S heated, 8 days S.S heated and 4 days S.S axis heated. Process of soybean sprout (4 days growing at $25^{\circ}C$) caused quantitative loss of soybean protein by 4.5%, and quantitative loss of 11% (EAAI basis) in chemical evaluation while protein efficiency loss of 7% (PER basis) and overall nutritional loss of 18% (weight gain basis).