• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.6-11
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• 2011

The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.372-376
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• 1998

We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of $NbS_2$ thin film was performed in the vacuum chamber by PLD method. $Al_2O_3$(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline $NbS_2$ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to $600^{\circ}C$. From the result of X-ray diffraction studies of the prepared $NbS_2$ thin films, it was reported that the $NbS_2$, thin film showed a good crystallinity at substrate temperature $600^{\circ}C$ and with S/Nb composition ratio 4.0 on $Al_2O_3$(012) but did not on Si(111). The films exhibited c-axis orientation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.155-159
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• 2008

In this work, we report synthesis of free-standing ZnO/Zn core-shell micro-polyhedrons using metal Zn pellets as a source material by the thermal chemical vapor deposition process. Scanning and transmission electron microscopy measurements were introduced to investigate morphologies and structural properties of as-grown ZnO/Zn core-shell micro-polyhedrons. It was found that micro-polyhedrons were composed of inner single-crystalline metal Zn surrounded by single-crystalline ZnO nanorod arrays. The inner single crystalline metal Zn with micro-scale diameter has a hexagonal crystal structure. Diameter and height of ZnO nanorods covering the metal Zn surface are below 10 nm and 100 nm, respectively. It was also confirmed that c-axis oriented ZnO nanorods are single crystalline with a hexagonal crystal structure.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Radiation Oncology Journal
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• v.15 no.1
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• pp.11-18
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• 1997

Purpose : To evaluate the efficacy of combined treatment of surgery and chemoradiotherapy for supratentorial primitive neuroectodermal tumors (SPNET) and obtain the Prognostic factors and complications Materials and Methods .The a9e of 18 patients ranged from 1 to 27 years (median=5 years). There were 12 males and 6 females The extents of surgery were gross total (n:9), subtotal (n:8), biopsy only (n: 1). Craniospinal radiotherapy was delivered to all the patients except 2 patients who were treated only with the whole brain and primary lesion. Radiation dose were 3120-5800cGy (median=5460) to primary mass, 1500-4200cGy (median=3600cGy) to the whole brain and 1320-3600cGy (median= 2400 cGy) to the spinal axis. Chemotherapy was done in 13 patients. Median follow-up period was 45 months ranged from 1 to 89 months. Results : Patterns of failure were as follows; local recurrence (1), multiple intracranial recurrence (2), spinal seeding (3), craniospinal seeding (2) and multiple bone metastasis (1). Two of two patients who did not received craniospinal radiotherapy failed at spinal area. All the relapsed cases died at 1 to 13 months after diagnosis of progression. The 2- and 5-rear overall survival rates were $61\%\;and\;49\%$, respectively The a9e, sex, tumor location did not influence the survival but aggressive resection with combined chemotherapy showed better outcome. Among 9 survivors, complications were detected as radiation necrosis (n=1), hypopituitarism (n=2), cognitive defect(n=1), memory deficit (n=1), growth retardation (n=1). Conclusion : To improve the results of treatment of SPNET, maximal surgical resection followed by radiation therapy and chemotherapy is necessary. The extended radiation field including craniospinal axis may reduce the recurrence in spinal axis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.40 no.4
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• pp.413-421
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• 2014

Corticotropin-releasing factor (CRF) is involved in the stress response and there is increasing evidence that stress influences skin disease such as hair loss. In cultured human hair follicles, CRF inhibits hair shaft elongation, induces premature regression and promotes the apoptosis of hair matrix keratinocytes. We investigated whether CRF influences the dermal papilla cells (DPC) that play pivotal roles in hair growth and cycling. Human DPCs were treated with CRF, adrenocorticotropic hormone (ACTH) and cortisol, key stress hormones along the hypothalamic-pituitary -adrenal (HPA) axis for 1-24 h. Interestingly, CRF modulated the expression of cytokines related to hair growth (KGF, Wnt5a, $TGF{\beta}-2$, Nexin) and increased cAMP production in cultured DPCs. CRF receptors were down-regulated by negative feedback systems. Pretreatment of CRF receptor antagonists or protein kinase A (PKA) inhibitor prevented the CRF-induced modulation. Since the CRF induces proopiomelanocortin (POMC) expression through the cAMP/PKA pathway, we analyzed POMC mRNA. CRF stimulated POMC expression in cultured human DPCs, yet we were unable to detect ACTH levels by western blot. These results indicate that CRF operates within DPCs through CRF receptors along the classical CRF signaling pathway and CRF receptor antagonists could serve as potential therapeutic and cosmetic agents for stress-induced hair loss.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.6
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• pp.1327-1334
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• 1988

In this study rotating bending fatigue tests have been carried out with the deep non-through radial holed notch specimens of low carbon steels(SM 22C). It is investigated that the behaviors of surface and interior fatigue crack propagation and the variations of the shape of the cracked surface on the magnitude of bending stresses. The Obtained results are summarized as follows. (1) The relations between [Crack length] and [Cycle ratio] are expressed by following eq. in the 0.1~0.6 range of N/ $N_{f}$ long[ crack length] = A + B [N/ $N_{f}$ ] In case of surface crack length, values of A and B are uniformed independent upon the magnitude of bending stress, but those are variable according to the magnitude of bending stress for interior crack length. (2) The following eq. is derived on the surface crack propagation rate, bending stress and surface crack length. (dl/dN)=(3.94*10$^{-12}$ ).sigma.$^{4.54}$l (3) Under small stress, interior crack propagation rate increase with the interior crack growth but it decrease for large stress. (4) The shape of cracked surface depends upon the magnitude of bending stress. Under small stress fatigue crack propagates as an semi-ellipse with semi-major axis of surface crack length with semi-major axis of interior crack length for large stress.s.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.195-201
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• 1999

C-axis oriented $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown on $Al_2O_3$ (alumina and R-plane sapphire) substrates by a pulsed laser deposition method. The crystallinity of the $CeO_2$ buffer layer on sapphire substrate exhibit a strong dependence on the deposition temperature, resulting in the growth of a-axis orientation at $800^{\circ}C$. The superconducting properties of YBCO thin films on $Al_2O_3$ substrates showed strong dependence on both thickness and crystallinity of the $CeO_2$ buffer layer. Critical temperature of YBCO film on alumina substrate was ${\sim}83\;K$. In the case of R-plane sapphire substrate,