• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.109-109
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• 2018

Cr-Mo 합금강은 고온 환경 하에서 높은 크리이프 강도와 우수한 내식성 때문에 발전설비, 석유 화학, 그리고 해양산업과 같은 여러 산업분야에서 널리 사용되고 있다. 특히, Cr-Mo 강의 내식성은 합금 내 Cr 함량에 크게 의존한다. 이는 고온에서 Cr과 O가 화학적 반응을 일으킴에 따라 보호성의 Cr 산화스케일을 형성하기 때문이다. 그러나 화석연료를 사용하는 발전설비의 경우, $SO_2$가 포함된 강한 부식성의 연소 가스가 배출되며, 이에 노출된 금속의 표면에서는 산화와 황화가 동시에 발생한다. 황화스케일은 산화스케일에 비해 매우 빠르게 성장하며, 그 특성이 매우 취약하기 때문에 황화 환경에서 금속의 내식성 및 기계적 물성치는 보다 크게 저하된다. 따라서 본 연구에서는 화력 발전소의 증기발생용 튜브 재료인 9Cr-1MoVNb 강을 선정하였으며, $SO_2$ 가스 환경 하에서의 부식 및 기계적 물성치 저하 특성을 평가하고자 하였다. 본 연구에서 사용된 9Cr-1MoVNb강의 화학 성분 조성은 0.1 C, 0.38 Si, 0.46 Mn, 0.25 Ni, 8.38 Cr, 0.93 Mo, 0.18 V, 0.09 Nb, 그리고 나머지는 Fe이다. 부식시험은 가공된 미소시험편과 인장시험편을 전기열처리로에 장입한 후, $650^{\circ}C$에서 $N_2+O_2+O_2+SO_2$ 조성의 가스를 분당 50 CC로 흘려주었다. 제작된 시험편에 대한 부식거동은 무게 증가량, optical microscope, scanning electron microsope, 그리고 energy dispersive x-ray spectrum을 통해 평가하였다. 그리고 기계적 물성치 평가를 위한 인장시험은 분당 2mm 변위제어를 통해 실시하였다. 그 결과, 9Cr-1MoVNb 강은 $SO_2$ 가스 환경 하에서 비 보호적인 Fe-풍부상의 산화 스케일층이 두껍게 형성됨에 따라 열악한 내식성을 나타냈다. 그에 따라 기계적 물성치는 저하되는 경향을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.483-488
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• 1996

InP 기판위에 InP와 격자정합된 undoped-InGaAs에서 zine의 확산 특성을 Electrochemical Capacitance-Voltage 법(polaron)과 Secondary Ion Mass Spectrometry(SIMS)로 조사하였다. Metallorganic Chemical Vapor Deposition (MOCVD)를 이용하여 undoped-InGaAs 층을 성장시켰으며 확산방법으로는 Zn3P2 확산원 박막과 Rapid Thermal Annealing (RTA)를 이용하였다. 450-55$0^{\circ}C$온도범위에서 30-300초 동안 확산을 수행한 결과 zinc의 확산계수는 D=Doexp(-$\Delta$E/kT)의 특성을 만족하였으며, Do와 $\Delta$E는 각각 1.3x105$\textrm{cm}^2$/sec와 2.3eV였다. 얻어진 확산계수는 다른 확산방법을 이용한 값들에 비해 매우 큰 값인데, 이것은 RTA 처리시 빠른 온도 증가에 의한 확산원 박막, 보호막, 그리고 InGaAs 에피층이 가지는 열팽창계수의 차이로인한 응력의 효과에 의한 것으로 생각되며, 이를 sealed-ampoule 법을 사용한 경우의 확산특성과 비교를 통하여 확인할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.376-381
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• 2007

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at $450^{\circ}C$ by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of $3.0{\times}10^{-4}{\Omega}\;cm$, the highest carrier concentration of $2.404{\times}10^{21}/cm^3$, and about $8\;cm^2/V{\cdot}sec$ of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of $Sn^{4+}-O$ bonding are the highest at 1.765 of F/Sn molar ratio.

• Journal of the Korean Electrochemical Society
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• v.5 no.2
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• pp.43-46
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• 2002

Commercial titanium rod was anodized in three types of electrolytes such as 0.06 mol/L $\beta-glycerophosphate+0.3mol/L$ calcium acetate, 0.06mol/L $\beta-glycerophosphate+0.3mol/L$ sodium acetate and 0.06 mol/L $\beta-glycerophosphate+5mol/L$ calcium phosphate. The titanium oxide layer $(TiO_2)$ was characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and electron spectroscopy chemical analysis (ESCA). Numerous micropores were observed on the titanium oxide layer by SEM. The diameter of micropores increased with the increase of electrolytic voltage. The titanium oxide layer was composed of anatase structure. The phosphorous element was detected at 130 eV binding energy, but calcium was not found in the oxide layer because of lower contents. After anodizing the oxide layer was etched in the 30g/L NaOH solution at $80^{\circ}C$ for 1hr. The surroundings of micropores were much more smoothed and rounded than before alkaline etching.

• Journal of Magnetics
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• v.16 no.2
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• pp.192-195
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• 2011

The phase transition of vortex matter from solid to liquid was studied in iron-based superconductors. Based on the traditional vortex glass theory, we have examined the magnetoresistivity data of iron-based superconductors using our extended thermal activation model: $\rho(B,T)=\rho((T-T_g(B))/(T_c(0)-T_g(B)))^{v(z-1)}$. We predict that the magnetic field-dependent area S + $S_0$ which integrates $\rho$ with T is proportional to $B^{\beta}$, where ${\beta}$ is the vortex glass transition exponent. From our calculation, the vortex glass transition exponent is 0.33, close to the exponent of area $S_0$ + S is 0.31 in $SmO_{0.9}F_{0.1}FeAs$; the exponent of area S is 0.63, which is close to the irreversibility line exponent 2/3. Both of the results show the validity of our model. In addition, our model is shown to be effective in describing irreversibility behavior in layered superconductors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.227-227
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• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. The as-deposited films are annealed in Rapid Thermal Annealing (RTA) system in various atmosphere(Air, Vacuum and $N_2$) at $500^{\circ}C$. In this work, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) of chemical bath deposited (CBD) CdS films on glass is carried out. In case of the annealed CdS films in $N_2$, grain size was larger than as-annealed films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

• Journal of the Korean Chemical Society
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• v.65 no.2
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• pp.125-132
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• 2021

An electrochromic nickel oxide thin film was fabricated on a flexible PET/ITO substrate using a nanocrystallite- dispersed coating sol and bar coater. Nanocrystalline NiOx of 3-4 nm crystallite size was first synthesized by base precipitation and thermal conversion. This NiOx nanocrystallite powder was mechanically dispersed in an alcoholic solvent mixed with a silane binder to prepare a coating sol for thin film. This sol method is different from the normal sol-gel method in that it does not require the conversion of precursor by heat treatment. Therefore, this method provides a very facile method to prepare NiOx thin films on any kind of substrate and it can be easily applied to mass production. The electrochromic performance of this NiOx thin film on PET/ITO electrode with a thickness of about 400 nm was investigated in a nonaqueous LiClO4 electrolyte solution by cyclic voltammetric and repeated chronoamperometric measurements in conjunction with spectrophotometry. The visible light modulation of 44% and the colorization efficiency of 41 ㎠/C at 550 nm were obtained at the step potentials of -0.8/+1.2 V vs Ag and a duration of 30 s.