• Title/Summary/Keyword: C-V Technique

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Characterization of Schottky diodes fabricated by various metals on SiC thin film grown by ICP-CVD (ICP-CVD로 성장된 SiC 박막위에 다양한 금속으로 제작된 Schottky diode의 특성 분석)

  • Ko, Suk-Il;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.440-442
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    • 2000
  • We have successfully fabricated SiC Schottky diodes using Al, Ni, Ti metallization systems. Schottky barrier height and other parameter have been measured by using I-V and C-V technique. The measured barreir heights depend on the metal and measurement techniques used. The barrier heights were 1.85eV(Al), 1.63eV(Ni), 0.97eV(Ti). The Ideality factors were 1.16(Al), 1.07(Ni), 1.05(Ti). Thermal stress tests were performed.

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Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$ ($28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성)

  • 홍현권;김규태;박세일;김구현;남두우
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.1
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    • pp.4-7
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    • 2002
  • Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

Poly-$\beta$-Hydroxybutyrate Produced by Pink-Pigmented Facultative Methylotrophic Bacterium from Methanol (분홍색 통성 메탄올 자화세균이 생산하는 Poly-$\beta$-Hydroxybutyrate)

  • 송미연;이재호;이용현
    • Microbiology and Biotechnology Letters
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    • v.18 no.3
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    • pp.273-279
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    • 1990
  • For poly- $\beta$ -hydroxybutyrate (PHB) production, a pink-pigmented facultative methylotrophic bacterium (PPFM) P-10 was newly isolated from soils through methanol-enrichment culture. The optimal medium composition for cell growth was 1.0% (vlv) of methanol as carbon source and l.Og/l of ,TEX>$NH_4Cl$, equivalent to C/N ratio of 13.2 at pH 7.0 and $30^{\circ}C$. To investigate the optimal condition for YHB accumulation, two-stage culture technique was adopted; first stage for cell growth and second stage for accumulation of PHB providing unbalanced growth conditions. The optimal PHB accumulation was 1.0% (vIv) of methanol and 0.26gll of $NH_4Cl$, C/N of 50.8 at pH 6.0. To overcome methanol inhibition on cell growth, intermittent feeding fed-batch culture technique was employed, and the cell concentration as high as 14gll with 40% of PHB was achieved. The purified PHB was identified using IR and $1^H NMR$ as homopolymer of 8hydroxybutyric acid. The absorption spectrum of extracted pink colored microbial pigment was alsa investigated.

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A Message Authentication Scheme for V2V message based on RSSI with anonymity (익명성을 제공하는 RSSI기반 V2V 메시지 인증기법)

  • Seo, Hwa-Jeong;Kim, Ho-Won
    • The KIPS Transactions:PartC
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    • v.18C no.4
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    • pp.207-212
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    • 2011
  • Vehicular Ad Hoc Network(VANET) is a communication technology between vehicles and vehicles(V2V) or vehicles and infrastructures(V2I) for offering a number of practical applications. Considering the importance of communicated information through VANET, data authentication, confidentiality and integrity are fundamental security elements. Recently, to enhance a security of VANET in various circumstances, message authentication is widely researched by many laboratories. Among of them, Zhang. et. al. is an efficient method to authenticate the message with condition of anonymity in dense space. In the scheme, to obtain the vehicular ID with condition of anonymity, the k-anonymity is used. However it has a disadvantage, which conducts hash operations in case of determining the vehicular ID. In the paper, we present a location based algorithm using received signal strength for the location based authentication and encryption technique as well, and to enhance the accuracy of algorithm we apply a location determination technique over the 3-dimensional space.

Study on Integrated for Capacitive Pressure Sensor (용량성 압력센서의 집적화에 관한 연구)

  • 이윤희
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.35T no.1
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    • pp.48-58
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    • 1998
  • For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

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Use of a capacitance voltage technique to study copper drift diffusion in low-k polyimide (C-V Technique을 이용한 low-k polyimide로의 구리의 drift diffusion 연구)

  • Choi, Yong-Ho;Lee, Heon-Yong;Kim, Jee-Gyun;Kim, Jung-Woo;Kim, Yoo-Kyuong;Park, Jin-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.137-140
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    • 2003
  • Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

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A low-power multiplying D/A converter design for 10-bit CMOS algorithmic A/D converters (10비트 CMOS algorithmic A/D 변환기를 위한 저전력 MDAC 회로설계)

  • 이제엽;이승훈
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.12
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    • pp.20-27
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    • 1997
  • In this paper, a multiplying digital-to-analog converter (MDAC) circuit for low-power high-resolution CMOS algorithmic A/D converters (ADC's) is proposed. The proposed MDAC is designed to operte properly at a supply at a supply voltge between 3 V and 5 V and employs an analog0domain power reduction technique based on a bias switching circuit so that the total power consumption can be optimized. As metal-to-metal capacitors are implemented as frequency compensation capacitors, opamps' performance can be varied by imperfect process control. The MDAC minimizes the effects by the circuit performance variations with on-chip tuning circuits. The proposed low-power MDAC is implementd as a sub-block of a 10-bit 200kHz algorithmic ADC using a 0.6 um single-poly double-metal n-well CMOS technology. With the power-reduction technique enabled, the power consumption of the experimental ADC is reduced from 11mW to 7mW at a 3.3V supply voltage and the power reduction ratio of 36% is achieved.

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A Marking Technique for Exorista bombycis(Louis) (Diptera:Tachinidae) by Adding Dye to the Adult Diet

  • Swamy, K.C.Narayana;Devaiah, M.C.;Govindan, R.
    • Journal of Sericultural and Entomological Science
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    • v.35 no.1
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    • pp.73-76
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    • 1993
  • Adding a non-fluorescent dye, Rhodamine-B, to the adult diet of uzi fly, Exorista bombysis (Louis) has shown to be a useful method for marking the eggs for flight range experiments. The method is timesaving and the dye is safe to handle and the marked eggs are easy to detect. Files fed on the diet added with dye did not have much negative effect on adult mortality and fecundity, but egg hatchability was affected.

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Nipple Reconstruction with Dermis(Scar Tissue) Graft and C-V Flap (진피(반흔 조직)이식과 C-V피판을 이용한 유두재건술)

  • Lee, Paik Kwon;Lim, Jee Hyun;Ahn, Sang Tae;Oh, Deuk Young;Rhie, Jong Won;Han, Ki Taik
    • Archives of Plastic Surgery
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    • v.33 no.1
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    • pp.101-106
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    • 2006
  • Nipple reconstruction is an important step in breast reconstruction after mastectomy. The authors' preferred reconstructive technique is the local C-V flap in case that a small opposite nipple is not adequate for composite graft. This flap produces an excellent reconstruction, but it is not easy to produce an adequate projection and firmness of the nipple. This article describes the technique and experience in nine patients treated over two years with dermis(scar tissue) graft for nipple reconstruction. This is the first report of application of autologous dermis(scar tissue) grafting to reconstruct a nipple primarily after breast mound reconstruction, decreasing the absorption of the reconstructed nipple and increasing the hardness. The dermis(scar tissue) is taken from scar revision and/or dog-ear correction in the second stage operation after free TRAM flap breast reconstruction. And the dermis(scar tissue) graft is inserted vertically between the local flaps and horizontally under the reconstructed nipple base. Between September 2002 and February 2005, nine patients underwent C-V flap with dermis(scar tissue) graft as a part of their nipple reconstruction. The patient's ages ranged from 28 to 55 years old (mean, 41.1 years old). The follow-up period ranged from 5 to 35 months, with an average of 14.5 months. None of the nipples showed skin flap necrosis or local infection, and uneventful wound healing. Our result showed good nipple projection with less absorption and enough firmness. Our experiences shows that dermis(scar tissue) grafts in C-V flap is a very useful method for nipple reconstruction.

Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique (급속 건식 열산화 방법에 의한 초박막 SiO2의 성장과 특성)

  • 정상현;김광호;김용성;이수홍
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.21-26
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    • 2004
  • Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva & Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.