• Proceedings of the KSME Conference
• /
• 2001.06a
• /
• pp.102-107
• /
• 2001

Interfacial cracks between an isotropic and orthotropic material, subjected to static far field tensile loading are analyzed using the technique of photoelasticity. The fracture parameters are extracted from the full-field isochromatic data and the same are compared with that obtained using boundary collocation method. Dynamic Photoelasticity combined with high-speed digital photography is employed for capturing the isochromatics in the case of propagating interfacial cracks. The normalized stress intensity factors for static crack is greater when $\alpha=90^{\circ}C$ (fibers perpendicular to the interface) than when $\alpha=0^{\circ}C$ (fiber parallel to the interface) and those when $\alpha=90^{\circ}C$ are similar to ones of isotropic material. The dynamic stress intensity factors for interfacial propagating crack are greater when $\alpha=0^{\circ}C$ than $\alpha=90^{\circ}C$. The relationship between complex dynamic stress intensity factor $|K_D|$ and crack speed C is similar to that for isotropic homogeneous materials, the rate of increase of energy release rate G or $|K_D|$ with crack speed is not as drastic as that reported for homogeneous materials.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.83-91
• /
• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.28-33
• /
• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Ocean Systems Engineering
• /
• v.9 no.4
• /
• pp.391-407
• /
• 2019

Tracking the location (position) of a surface or underwater marine vehicle is important as part of guidance and navigation. While the Global Positioning System (GPS) works well in an open sea environment but its use is limited whenever testing scaled-down models of such vehicles in the laboratory environment. This paper presents the design, development and implementation of a low energy ultrasonic augmented single beacon-based localization technique suitable for such requirements. The strategy consists of applying Extended Kalman Filter (EKF) to achieve location tracking from basic dynamic distance measurements of the moving model from a fixed beacon, while on-board motion sensor measures heading angle and velocity. Iterative application of the Extended Kalman Filter yields x and y co-ordinate positions of the moving model. Tests performed on a free-running ship model in a wave basin facility of dimension 30 m by 30 m by 3 m water depth validate the proposed model. The test results show quick convergence with an error of few centimeters in the estimated position of the ship model. The proposed technique has application in the real field scenario by replacing the ultrasonic sensor with industrial grade long range acoustic modem. As compared with the existing systems such as LBL, SBL, USBL and others localization techniques, the proposed technique can save deployment cost and also cut the cost on number of acoustic modems involved.

• Proceedings of the KIPE Conference
• /
• 2004.07b
• /
• pp.528-532
• /
• 2004

Novel single-stage power factor correction AC/DC converter with low DC link voltage using new magnetic feedback technique is proposed in this paper. The Proposed converter has high power factor, tight output voltage regulation and low link capacitor voltage less than 450V for all the load range through the universal input line. This converter has also no dead-zone in the input current, which is seen in the conventional converter using the previous magnetic feedback technique. In this paper, the analysis of operations and features of the proposed converter is provided, and the experimental results of 90W-prototype shows the low harmonic distortions satisfied with EN 61000-3-2 Class D, high power factor and low link voltage less than 450V.

• Journal of the Korean Vacuum Society
• /
• v.18 no.5
• /
• pp.390-393
• /
• 2009

We report on a new patterning technique for organic functional materials applicable to organic photovoltacis (OPVs). The unconventioal patterning technique, $O_2$ plsama-etching selectively perfluoro-alkyl fluorosilanes, is used for producing a bulk-heterojunction active layer with poly(3-hexylthiophene) as the electron donor and [6,6]-phenyl-$C_{61}$ butyric acid methyl ester as the electron acceptor. The patterning with reduced leakage path and parasitic capacitance suggests a way for fabrication of OPVs with higher energy conversion efficiency.

• The Bulletin of The Korean Astronomical Society
• /
• v.38 no.1
• /
• pp.56.1-56.1
• /
• 2013

We have carried out follow-up observations of transiting extrasolar planets using small- to medium-sized reflectors located in Korea. Using the 0.60m telescope stationed at CbNUO (Chungbuk National University Observatory) we have achieved a photometric precision of 1.48 milli-magnitudes (root-mean-square scatter of data) of a HAT-P-09b (transit duration of 3.43 hrs) transit light curve (transit depth ~ 1.3%) with V=12.3 mag for the host star. We expect a photometric precision of 1.0 - 1.2 milli-magnitude for brighter targets (V ~ 10 - 11 mag). The transit technique and its application will be outlined. The results of test observations will be presented and the defocus technique will be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.1
• /
• pp.78-86
• /
• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• Journal of Mushroom
• /
• v.5 no.2
• /
• pp.51-58
• /
• 2007

These experiment was conducted to find the superior strain selection, cultivation technique and optimum environmental condition of nameko mushroom culture using plastic container. The results was following as Mycelium of Pholiota nameko grown well at MCM and Hamada media, and its media acidity was pH 6~7. The optimum temperature condition for growing mycelium was $25^{\circ}C$. Under $15^{\circ}C$ and above $30^{\circ}C$ of temperature condition, mycelium growing speed was delayed remarkably. Among the 29 strains of nameko mushroom, the most productive strains was JNM19007, JNM19026, JNM19027 and JNM19028. The optimum media composition rate for produce fruitbody was pine sawdust 80% + wheat bran 20%. In this condition, the average fruitbody amount was 188g per 1,100cc container. The optimum post-culturing period was 50 days and mushroom sprout appeared 7 days after old mycelia removed. The suitable temperature was $12^{\circ}C$ for induce sprout, growing period was $16^{\circ}C$ and the optimum relative humidity was 95% in all culturing periods.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.153-155
• /
• 2009

In this study, we fabricated the $Cu(In,Ga)Se_2$ (CIGS) thin-film solar cells by using a polyimide substrate. The CIGS thin-film was deposited on Mo coated polyimide substrate by a 3-stage co-evaporation technique. Because the polyimide shows thermal transformation at about $400^{\circ}C$, the substrate temperature of co-evaporation process was set to below $400^{\circ}C$. Corresponding solar cell showed a conversion efficiency of 7.08 % with $V_{OC}$ of 0.58 V, $J_{SC}$ of 24.99 $mA/cm^2$ and FF of 0.49.