• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.4
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• pp.21-29
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• 1998

As silicon geometry shrinks into deep submicron and the operating speed icreases, higher accuracy is required in the analysis of the propagation delays of the gates and interconnects in an ASIC. In this paper, the driving characteristics of a CMOS gate is represented by a gatedriver model, consisting of a linear resistor $R_{dr}$ and an independent ramp voltage source $V_{dr}$ . We drivered $R_{dr}$ and $V_{dr}$ as the functions of the timing data representing gate driving capability and an effective capacitance $C_{eff}$ reflecting resistance shielding effect by interconnet circuits. Through iterative applications of these equations and AWE algorithm, $R_{dr}$ , $V_{dr}$ and $C_{eff}$ are comuted simulataneously. then, the gate delay is decided by $C_{eff}$ and the interconnect circuit delay is determined by $R_{dr}$ and $V_{dr}$ . this process has been implemented as an ASIC timing analysis program written in C language and four real circuits were analyzed. In all cases, we found less than 5% of errors for both of gate andinterconnect circuit delays with a speedup factor ranging from a few tens to a few hundreds, compared to SPICE.SPICE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.383-386
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• 2004

DC accelerated aging characteristics of Zn-Pr-Co-Cr-La oxides-based varistors were investigated with various sintering temperatures. The varistors sintered at $1240^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 79.3 and a leakage current of $0.3\;{\mu}A$, whereas completely degraded because of thermal runaway owing to low sintered density. The varistors sintered at $1250^{\circ}C$ exhibited not only a high nonlinearity with the nonlinear exponent 61.4 and the leakage current 0.7 ${\mu}A$, but also a high stability with the variation rates of varistor voltage and nonlinear exponent are -1.01% and -10.67%, respectively, under DC stress condition such as $(0.85\;V_{1mA}/115^{\circ}C/24\;h)+(0.90\;V_{1mA}/120^{\circ}C/24\;h)+(0.95\;V_{1mA}/125^{\circ}C/24\;h)+(0.95\;V_{1mA}/150^{\circ}C/24\;h)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.27-27
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• 2010

This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

• Korean Journal Plant Pathology
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• v.13 no.3
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• pp.152-159
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• 1997

Six pathogenic Pythium isolates obtained from diseased ginger rhizomes were identified as Pythum myriotyrum Drechsler based on various morphological and physiological characteristics. The isolates showed strong virulence on underground parts of buds, crowns, rhizomes, roots and aerial parts of leaves and stems as well. The isolates caused rot of germinated seeds of 10 different crops tested, including cucumber and pepper, and markedly inhibited seedling growth of 3 crops tested, including corn and barley. Maximum, optimum and minimum growth temperatures for P. myriotylum were 39~45$^{\circ}C$, 33~37$^{\circ}C$ and 5~7$^{\circ}C$, respectively. Optimum pH for the growth was 6~7. Mycelial linear growth was most rapid on V-8 juice agar, but aerial mycelia were most abundant on PDA and corn meal agar. Zoosporangial and oogonial formation was greatest on V-8 juice agar. Optimum temperatures for the production of zoosporangia and oogonia were 20~35$^{\circ}C$ and 15$^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• Transactions of the Korean Society of Automotive Engineers
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• v.10 no.4
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• pp.192-198
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• 2002

There are genuine parts, non-genuine parts and recycled parts which can be replaced for the repair of damaged parts of crashed cars. It is the recent trend in korea that recycled C. V joints are more popular than the genuine parts fur repairing crashed cars due to the cost. Performance of recycled C. V. joints as replacement parts was tested and analysed in this study. To examine the durability of the recycled parts, the replaced C. V joints after repair were tested and analysed periodically. The results were showed that basic performance of the recycled parts was normal. However ball cage was more frequently damaged than genuine parts. We concluded that a standard test for recycled parts is required to get a safe and durable parts.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• Journal of Auto-vehicle Safety Association
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• v.7 no.2
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• pp.39-43
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• 2015

NDIR (Non-dispersive infrared Rays) alcohol sensor has been prototyped and its temperature characteristics were measured. In order to design novel optical alcohol sensor, elliptical structures with one common foci were modeled and analyzed their optical properties. After analyzing elliptic optical structures, a prototype alcohol sensor module was tested according to the temperature variations from $-20^{\circ}C$ to $35^{\circ}C$. The offset voltages of alcohol sensor decreased from 1.1056 V at the temperature $-20^{\circ}C$ to 0.7339 V at $35^{\circ}C$. However, the highest sensitivity of alcohol sensor showed about $303{\mu}V/ppm$ at room temperature.