• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1576-1579
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• 2005

With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

• 한국재료학회지
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• 제8권1호
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• pp.85-91
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• 1998

인이 높은 농도로 도핑되어진 LPCVD 다결정 실리콘 박막의 열팽창 계수를 마이크로 게이지법을 이용하여 측정하였다. 기존의 박막의 열팽창 계수 측정 법에서는 박막이 기판에 증착되어진 상태에서 측정이 이루어지므로, 기판의 탄성계수와 열팽창계수를 미리 알고 있어야 한다. 이에 비해 마이크로 게이지법에서는 박막의 열\ulcorner창 계수를 도출하기 위하여 기판의 탄성계수 값과 열팽창 계수 값을 필요로 하지 않는다는 장점이 있다. 마이크로 게이지법에서는 전류를 가할 경우 줄 발열에 의해 발생한 마이크로 게이지에의 변위를 측정하고, 그 때 계산된 마이크로 게이지의 평균 온도의 관계에서 열팽창 계수를 계산한다. 다결정 실리콘 박막의 열팽창 계수는 2.9 x $10^{-6}$$^{\circ}C$로 측정되었으며, 이 값들의 표준편차는 0.24x$10^{-6}$$^{\circ}C$였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.795-798
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• 2002

Replacing Pb-free glass composition for the dielectric materials is expected in PDP industry. In this study, phosphate glasses, $P_2O_5$- ZnO- SnO (PZS), $P_2O_5$-ZnO-BaO (PZB) were selected for a new transparent dielectric. Thermal properties (Tg, CTE) were measured with differential thermal analyzer and thermal mechanical analyzer. The glass transition of the glasses was ranged at $365{\sim}405^{\circ}C$ for the PZS system and $5.9{\sim}9.5{\times}\;10^{-6}$ of thermal expansion were found. The PZB system showed $445{\sim}470^{\circ}C$ of glass transition. Thus, the glass compositions would be a potential candidate for a transparent dielectric layer in plasma display panel.

• The Korean Journal of Ceramics
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• 제1권4호
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• pp.204-208
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• 1995

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

• 한국재료학회지
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• 제6권2호
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• pp.145-152
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• 1996

태양전지의 앞면전극으로 사용될 SnO2박막을 spray pyrolysis 방법으로 증착하여 증착조건에 따른 박막 특성을 연구하였다. 증착온도가 증가함에 따라 SnO2박막의 우선방위가 (200)면에서 면밀도가 더 높은 (211), (110)면으로 바뀌었고 막의 미세구조도 거칠고 각진 구조에서 평탄한 구조로 변하였다. 또한 더 안정된 결정면 성장과 온도 증가에 의해 CI, F 등의 불순물 흡착이 어려워져 전자 전하농도가 감소하고 비저항 값이 증가하였다. 특히 50$0^{\circ}C$ 이상에서는 전하농도가 크게 감소하여 비저항이 크게 증가하였다. NH4F/Sn=2.3인 용액으로 40$0^{\circ}C$에서 증착된 SnO2박막은 약 90%이상의 광투과도를 갖고 균일한 도핑으로 인해 약 4$\times$10-4$\Omega$ .cm의 낮은 비저항 값을 나타내었다. 두께에 따른 판저항과 광투과도의 상반된 효과를 고려한 figure of merit으로부터 투명전극으로써 가장 적절한 두께는 약 500nm이었다.

• ETRI Journal
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• 제36권2호
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• pp.286-292
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• 2014

This paper presents a compact structure composed of an upper high-impedance transmission line, a middle extended parallel coupled line, and a pair of inter-coupled symmetrical stepped impedance stubs. Detailed investigation into this structure based on an equivalent circuit analysis reveals that this proposed structure exhibits a quasi-elliptic low-pass filtering response with three transmission zeros. Moreover, the positions of the three transmission zeros can be tuned and reallocated flexibly by choosing the proper circuit parameters. Finally, the design concept is validated through the design, fabrication, and measurement of two exemplary low-pass filters (LPFs) with one single unit and two cascaded asymmetric units. The measured results agree well with the simulated results. In addition, in the range of $1.42f_c$ to $7.03f_c$, the fabricated quasi-elliptic LPFs experimentally demonstrate a very wide upper-stopband of 20 dB using a compact size of only $0.0089{\lambda}_g{^2}$, where ${\lambda}_g$ is the guided wavelength of a $50{\Omega}$ transmission line at the central frequency.

• 한국재료학회지
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• 제16권5호
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• pp.329-335
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• 2006

In order to improve thermal efficiency of the fossil fuel power plants, we need to develop advanced materials with superior durability in the ultra-super critical state, which requires surface modifications for superior surface properties. In this study, we coated the Incoloy 901 and 12-17Cr steels for turbine buckets and valves with nitriding, boriding, and $Cr_3C_2-NiCr$ HVOF(high velocity oxygen flow) method. Then the samples were heat treated at $650^{\circ}C$ for 100 hours in vacuum. We analyzed the evolution behaviors of nitrides such as $Fe_3N,\;Fe_4N$, and CrN and borides such as FeB and $Fe_2B$ with XRD and SEM/EDS by comparing hardnesses and compositions of the coated layers before and after the heat treatments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.59-62
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• 1996

The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

• 한국재료학회지
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• 제13권8호
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• 한국초전도ㆍ저온공학회논문지
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• 제24권4호
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• pp.29-35
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• 2022

We fabricated MHOS (multi-HTS layers on one substrate) high-temperature superconducting (HTS) REBCO conductors using HTS REBCO coated conductor (CC) A-specimen, which induces an artificial magnetic flux pinning effect, and HTS REBCO CC B-specimen, that does not induce this effect. The superconducting magnetic properties of the fabricated MHOS conductors were examined by measuring their magnetic moment m(H) curves using a physical property measurement system (QD PPMS-14). The critical current density (J_c) characteristics of our four-layered MHOS HTS REBCO conductor specimens such as BAAB, BBBB, and AAAA were lower than those of their two-layered and three-layered counterparts. At a temperature T of 30 K the magnetic flux pinning physical indicator δ values (obtained from the relationship J_c ∝ H^-δ) of the three-layer ABA (δ = 0.35) and two-layer AB (δ = 0.43) specimens were found to be significantly lower than those of the four-layer ABBA (δ = 0.51), BAAB (δ = 0.60), AAAA (δ = 0.78) and BBBB (δ = 0.81) structures.